Category:Indra V. Chary of Boise ID (US)
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Indra V. Chary of Boise ID (US)
Executive Summary
Indra V. Chary of Boise ID (US) is an inventor who has filed 4 patents. Their primary areas of innovation include ELECTRONIC MEMORY DEVICES (4 patents), ELECTRONIC MEMORY DEVICES (4 patents), ELECTRONIC MEMORY DEVICES (2 patents), and they have worked with companies such as Lodestar Licensing Group LLC (4 patents). Their most frequent collaborators include (4 collaborations), (3 collaborations), (2 collaborations).
Patent Filing Activity
Technology Areas
List of Technology Areas
- H10B41/27 (ELECTRONIC MEMORY DEVICES): 4 patents
- H10B43/27 (ELECTRONIC MEMORY DEVICES): 4 patents
- H10B41/41 (ELECTRONIC MEMORY DEVICES): 2 patents
- G11C5/063 (STATIC STORES (semiconductor memory devices): 2 patents
- H10B41/35 (ELECTRONIC MEMORY DEVICES): 2 patents
- H10B43/35 (ELECTRONIC MEMORY DEVICES): 2 patents
- H10B43/40 (ELECTRONIC MEMORY DEVICES): 2 patents
- G11C5/025 ({Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device (geometrical lay-out of the components in integrated circuits,): 1 patents
- G11C5/06 (STATIC STORES (semiconductor memory devices): 1 patents
- H01L21/76838 ({characterised by the formation and the after-treatment of the conductors (etching for patterning the conductors): 1 patents
- H01L23/5386 (the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates ({): 1 patents
- H01L24/14 ({of a plurality of bump connectors}): 1 patents
- H01L23/5283 ({Geometry or} layout of the interconnection structure {(): 1 patents
- H01L21/31144 ({using masks}): 1 patents
- H01L21/76804 ({by forming tapered via holes}): 1 patents
- H01L21/76877 ({Thin films associated with contacts of capacitors}): 1 patents
- H01L23/5226 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
Companies
List of Companies
- Lodestar Licensing Group LLC: 4 patents
Collaborators
- Shuangqiang Luo of Boise ID (US) (4 collaborations)
- Justin B. Dorhout of Boise ID (US) (3 collaborations)
- Rita J. Klein of Boise ID (US) (2 collaborations)
Subcategories
This category has the following 4 subcategories, out of 4 total.
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Pages in category "Indra V. Chary of Boise ID (US)"
The following 13 pages are in this category, out of 13 total.
1
- 17812141. MICROELECTRONIC DEVICES WITH CONTACTS EXTENDING THROUGH METAL OXIDE REGIONS OF STEP TREADS, AND RELATED SYSTEMS AND METHODS simplified abstract (Micron Technology, Inc.)
- 17822421. MICROELECTRONIC DEVICES INCLUDING STADIUM STRUCTURES, AND RELATED MEMORY DEVICES AND ELECTRONIC SYSTEMS simplified abstract (Micron Technology, Inc.)
- 17848021. MEMORY DEVICE INCLUDING HIGH-ASPECT-RATIO CONDUCTIVE CONTACTS simplified abstract (Micron Technology, Inc.)
- 18428836. METHODS OF FORMING MICROELECTRONIC DEVICES simplified abstract (Micron Technology, Inc.)
- 18443013. MERGED CAVITIES FOR CONDUCTOR FORMATION IN A MEMORY DIE simplified abstract (Micron Technology, Inc.)
- 18513430. MICROELECTRONIC DEVICES INCLUDING STADIUM STRUCTURES, AND RELATED MEMORY DEVICES AND ELECTRONIC SYSTEMS simplified abstract (Micron Technology, Inc.)
- 18602321. Memory Circuitry And Methods Used In Forming Memory Circuitry simplified abstract (Micron Technology, Inc.)
- 18752525. METHODS OF FORMING MICROELECTRONIC DEVICES INCLUDING DIFFERENTLY SIZED CONDUCTIVE CONTACT STRUCTURES simplified abstract (Micron Technology, Inc.)
M
- Micron technology, inc. (20240196606). MICROELECTRONIC DEVICES INCLUDING STADIUM STRUCTURES, AND RELATED MEMORY DEVICES AND ELECTRONIC SYSTEMS simplified abstract
- Micron technology, inc. (20240284672). MERGED CAVITIES FOR CONDUCTOR FORMATION IN A MEMORY DIE simplified abstract
- Micron technology, inc. (20240292623). METHODS OF FORMING MICROELECTRONIC DEVICES, AND RELATED ELECTRONIC SYSTEMS simplified abstract
- Micron technology, inc. (20240341095). Memory Circuitry And Methods Used In Forming Memory Circuitry simplified abstract
- Micron technology, inc. (20240347464). METHODS OF FORMING MICROELECTRONIC DEVICES INCLUDING DIFFERENTLY SIZED CONDUCTIVE CONTACT STRUCTURES simplified abstract