18202085. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
INTEGRATED CIRCUIT DEVICE
Organization Name
Inventor(s)
Chulkwon Park of Suwon-si (KR)
Gyunghyun Yoon of Suwon-si (KR)
INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18202085 titled 'INTEGRATED CIRCUIT DEVICE
Simplified Explanation
The abstract describes an integrated circuit (IC) device that includes a gate trench formed inside a substrate. The device also includes a gate electrode structure, a gate insulating layer, and a gate capping layer.
- The gate trench has a bottom portion and a sidewall portion.
- The gate electrode structure is separate from the bottom and sidewall portions of the gate trench.
- The gate electrode structure includes a first sub-gate electrode formed in the lower portion of the gate trench and a second sub-gate electrode formed on top of the first sub-gate electrode.
- A gate capping layer is formed on top of the second sub-gate electrode.
- The gate insulating layer is located between the gate trench and the gate electrode structure.
- The gate insulating layer includes a base insulating layer between the bottom and sidewall portions of the gate trench and the gate electrode structure.
- A reinforcing insulating layer is formed on the sidewall portion of the second sub-gate electrode.
Potential applications of this technology:
- Integrated circuit devices
- Semiconductor devices
- Electronics manufacturing
Problems solved by this technology:
- Provides a structure for an integrated circuit device that improves performance and reliability.
- Enhances the gate insulation and reduces leakage current.
Benefits of this technology:
- Improved performance and reliability of integrated circuit devices.
- Reduced leakage current, leading to more efficient operation.
- Enhanced gate insulation, resulting in better overall device performance.
Original Abstract Submitted
An integrated circuit (IC) device includes a gate trench formed inside a substrate, the gate trench including a bottom portion and a sidewall portion, a gate electrode structure disposed apart from the bottom portion and the sidewall portion of the gate trench, the gate electrode structure including a gate electrode including a first sub-gate electrode formed in a lower portion of the gate trench and a second sub-gate electrode formed on the first sub-gate electrode and a gate capping layer formed on the second sub-gate electrode, and a gate insulating layer formed between the gate trench and the gate electrode structure, the gate insulating layer including a base insulating layer formed between the bottom portion and the sidewall portion of the gate trench and the gate electrode structure and a reinforcing insulating layer formed on a sidewall portion of the second sub-gate electrode.
