18100872. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
Moon Seung Yang of Suwon-si (KR)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18100872 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The abstract describes a semiconductor device that includes a substrate with an active pattern, a channel pattern, and a source/drain pattern. The source/drain pattern has multiple sections at different levels, with varying rates of change in germanium concentration. The germanium concentration at each level is between 0% and 10%.
- The semiconductor device includes a substrate with an active pattern, a channel pattern, and a source/drain pattern.
- The source/drain pattern has multiple sections at different levels.
- The rate of change in germanium concentration in the first variation section is greater than in the other sections.
- The germanium concentration at each level is between 0% and 10%.
Potential Applications
- This semiconductor device can be used in various electronic devices such as smartphones, computers, and tablets.
- It can be applied in the manufacturing of integrated circuits and microprocessors.
Problems Solved
- The device addresses the need for improved performance and efficiency in semiconductor devices.
- It solves the problem of controlling germanium concentration in different sections of the source/drain pattern.
Benefits
- The varying germanium concentration in the source/drain pattern allows for better control of electrical properties.
- The device offers improved performance and efficiency in electronic devices.
- It provides a more precise and controlled manufacturing process for integrated circuits and microprocessors.
Original Abstract Submitted
A semiconductor device includes a substrate including an active pattern, a channel pattern on the active pattern, and a source/drain pattern on a side surface of the channel pattern, the source/drain pattern including a first section between a first level and a second level that is higher than the first level, a first variation section between the second level and a third level that is higher than the second level, and a second section between the third level and a fourth level that is higher than the third level, where a rate of change in germanium concentration in the first variation section in a first direction is greater than a rate of change in germanium concentration in each of the first section and the second section in the first direction, and a germanium concentration at each of the first level and the second level is greater than 0 at % and equal to or less than 10 at %.
