US Patent Application 17896840. Integrated Circuit Packages and Methods of Forming the Same simplified abstract

From WikiPatents
Revision as of 15:31, 6 December 2023 by Wikipatents (talk | contribs) (Creating a new page)
(diff) ← Older revision | Latest revision (diff) | Newer revision → (diff)
Jump to navigation Jump to search

Integrated Circuit Packages and Methods of Forming the Same

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Der-Chyang Yeh of Hsinchu (TW)

Chao-Wen Shih of Zhubei City (TW)

Sung-Feng Yeh of Taipei City (TW)

Ta Hao Sung of Yilan County (TW)

Min-Chien Hsiao of Taichung City (TW)

Chun-Chiang Kuo of Kaohsiung (TW)

Tsung-Shu Lin of New Taipei City (TW)

Integrated Circuit Packages and Methods of Forming the Same - A simplified explanation of the abstract

This abstract first appeared for US patent application 17896840 titled 'Integrated Circuit Packages and Methods of Forming the Same

Simplified Explanation

The abstract describes a device that includes multiple integrated circuit dies and a protective cap with a gap-fill dielectric and an isolation layer.

  • The device consists of a first integrated circuit die and a second integrated circuit die.
  • A gap-fill dielectric is present between the first sidewall of the first integrated circuit die and the second sidewall of the second integrated circuit die.
  • A protective cap overlaps the gap-fill dielectric, the first sidewall of the first integrated circuit die, and the second sidewall of the second integrated circuit die.
  • An isolation layer surrounds the protective cap and is positioned on both the first integrated circuit die and the second integrated circuit die.


Original Abstract Submitted

In an embodiment, a device includes: a first integrated circuit die; a second integrated circuit die; a gap-fill dielectric between a first sidewall of the first integrated circuit die and a second sidewall of the second integrated circuit die; a protective cap overlapping the gap-fill dielectric, the first sidewall of the first integrated circuit die, and the second sidewall of the second integrated circuit die; and an isolation layer around the protective cap, the isolation layer disposed on the first integrated circuit die, and the second integrated circuit die.