US Patent Application 18360895. Backside Power Rail And Methods Of Forming The Same simplified abstract

Backside Power Rail And Methods Of Forming The Same

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Huan-Chieh Su of Changhua County (TW)

Li-Zhen Yu of Hsinchu (TW)

Chun-Yuan Chen of Hsinchu (TW)

Shih-Chuan Chiu of Hsinchu (TW)

Cheng-Chi Chuang of New Taipei City (TW)

Yu-Ming Lin of Hsinchu City (TW)

Chih-Hao Wang of Hsinchu County (TW)

Backside Power Rail And Methods Of Forming The Same - A simplified explanation of the abstract

This abstract first appeared for US patent application 18360895 titled 'Backside Power Rail And Methods Of Forming The Same

Simplified Explanation

The patent application describes a semiconductor device that includes several components and features.

• The device has a bottom dielectric feature on a substrate.
• There are multiple channel members directly positioned over the bottom dielectric feature.
• Each of the channel members is wrapped around by a gate structure.
• The device also includes two first epitaxial features that sandwich the bottom dielectric feature in a specific direction.
• Additionally, there are two second epitaxial features that sandwich the plurality of channel members in the same direction.

Original Abstract Submitted

A semiconductor device according to the present disclosure includes a bottom dielectric feature on a substrate, a plurality of channel members directly over the bottom dielectric feature, a gate structure wrapping around each of the plurality of channel members, two first epitaxial features sandwiching the bottom dielectric feature along a first direction, and two second epitaxial features sandwiching the plurality of channel members along the first direction.