Category:Bo-Jiun HU

Bo-Jiun HU

Executive Summary

Bo-Jiun HU is an inventor who has filed 3 patents. Their primary areas of innovation include of the light emitting region, e.g. non-planar junction (3 patents), {the electrode extending at least partially onto a side surface of the semiconductor body} (3 patents), Transparent materials (3 patents), and they have worked with companies such as EPISTAR CORPORATION (3 patents). Their most frequent collaborators include (3 collaborations), (3 collaborations), (2 collaborations).

Patent Filing Activity

Technology Areas

List of Technology Areas

• H01L33/24 (of the light emitting region, e.g. non-planar junction): 3 patents
• H01L33/385 ({the electrode extending at least partially onto a side surface of the semiconductor body}): 3 patents
• H01L33/42 (Transparent materials): 3 patents
• H01L33/46 (Reflective coating, e.g. dielectric Bragg reflector): 3 patents
• H01L33/62 (Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls): 3 patents
• H01L33/382 ({the electrode extending partially in or entirely through the semiconductor body}): 2 patents
• H01L33/00 (Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (): 2 patents
• H01L33/10 (with a light reflecting structure, e.g. semiconductor Bragg reflector): 2 patents
• H01L33/387 ({with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer}): 2 patents
• H01L33/0012 ({p-i-n devices}): 2 patents
• H01L33/02 (characterised by the semiconductor bodies): 2 patents
• H01L27/156 (including semiconductor components having potential barriers, specially adapted for light emission): 1 patents
• H01L33/0075 ({comprising nitride compounds}): 1 patents
• H01L33/0093 ({Wafer bonding; Removal of the growth substrate}): 1 patents
• H01L33/12 (with a stress relaxation structure, e.g. buffer layer): 1 patents
• H01L33/30 (containing only elements of Group III and Group V of the Periodic Table): 1 patents
• H01L2933/0016 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents

Companies

List of Companies

• EPISTAR CORPORATION: 3 patents

Collaborators

• Chao-Hsing CHEN (3 collaborations)
• Yu-Ling LIN (3 collaborations)
• Jia-Kuen WANG (2 collaborations)
• Tzu-Yao TSENG (2 collaborations)
• Tsung-Hsun CHIANG (2 collaborations)
• Wen-Hung CHUANG (2 collaborations)
• I-Lun MA (1 collaborations)
• Chien-Chih LIAO (1 collaborations)