US Patent Application 17824507. METHOD FOR PREPARING MEMORY DEVICE HAVING PROTRUSION OF WORD LINE simplified abstract
Contents
METHOD FOR PREPARING MEMORY DEVICE HAVING PROTRUSION OF WORD LINE
Organization Name
Inventor(s)
JAR-MING Ho of TAIPEI CITY (TW)
METHOD FOR PREPARING MEMORY DEVICE HAVING PROTRUSION OF WORD LINE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17824507 titled 'METHOD FOR PREPARING MEMORY DEVICE HAVING PROTRUSION OF WORD LINE
Simplified Explanation
- The present disclosure describes a method for preparing a memory device. - The method involves forming a first bottom cell within a bottom substrate, which includes a bottom capacitor, a bottom word line, and a bottom channel layer. - A first top cell is also formed within a top substrate, which includes a top capacitor, a top word line, and a top channel layer. - A common bit line is formed between the first bottom cell and the first top cell, extending in a direction perpendicular to the bottom word line and top word line. - The method aims to provide a memory device with improved performance and efficiency.
Original Abstract Submitted
The present disclosure provides a method for preparing a memory device. The method includes forming a first bottom cell within a bottom substrate, comprising: forming a first bottom capacitor within the bottom substrate; forming a first bottom word line on the bottom substrate and extending along a first direction; and forming a first bottom channel layer surrounded by the first bottom word line. The method also includes forming a first top cell within a top substrate, comprising: forming a first top capacitor within the top substrate; forming a first top word line on the top substrate and extending along the first direction; and forming a first top channel layer surrounded by the first top word line. The method further includes forming a common bit line between the first bottom cell and the first top cell and extending along a second direction substantially perpendicular to the first direction.
