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US Patent Application 17752638. METHOD OF FABRICATING STORAGE CAPACITOR WITH MULTIPLE DIELECTRICS simplified abstract

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METHOD OF FABRICATING STORAGE CAPACITOR WITH MULTIPLE DIELECTRICS

Organization Name

NANYA TECHNOLOGY CORPORATION

Inventor(s)

KAI-HUNG Lin of TAOYUAN CITY (TW)

JYUN-HUA Yang of TAIPEI CITY (TW)

METHOD OF FABRICATING STORAGE CAPACITOR WITH MULTIPLE DIELECTRICS - A simplified explanation of the abstract

This abstract first appeared for US patent application 17752638 titled 'METHOD OF FABRICATING STORAGE CAPACITOR WITH MULTIPLE DIELECTRICS

Simplified Explanation

The patent application describes a method for creating a storage capacitor.

  • Lower electrode is formed.
  • A first dielectric layer is deposited to cover the lower electrode.
  • A second dielectric layer is deposited on top of the first dielectric layer.
  • A third dielectric layer is deposited on top of the second dielectric layer.
  • An upper electrode is formed on top of the third dielectric layer.


Original Abstract Submitted

The present application provides a method of fabricating a storage capacitor. The method includes steps of forming a lower electrode; depositing a first dielectric layer covering the lower electrode; depositing a second dielectric layer on the first dielectric layer; depositing a third dielectric layer on the second dielectric layer; and forming an upper electrode on the third dielectric layer.

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