SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor(s)

Ya-Yi Tsai of New Taipei City (TW)

Yi-Chun Chen of Hsinchu City (TW)

Wei-Han Chen of Hsinchu City (TW)

Wei-Ting Guo of Hsinchu City (TW)

Shu-Yuan Ku of Hsinchu City (TW)

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18232533 titled 'SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

Simplified Explanation

The patent application describes a method for fabricating a semiconductor device.

A plurality of semiconductor fins is formed in a first region on a substrate.
An isolation region is formed around the semiconductor fins.
Dummy fins are formed above the isolation region and adjacent to the semiconductor fins.
The semiconductor fins are etched to have the same height as the isolation region.
The isolation region is selectively etched to create a recess next to the semiconductor fins.
The semiconductor fins are further etched to remove them and create a recess in the substrate.

Original Abstract Submitted

A method of fabricating a semiconductor device is described. A plurality of semiconductor fins is formed in a first region on a substrate. An isolation region is formed around the plurality of semiconductor fins. Dummy fins are formed extending above the isolation region and laterally adjacent the plurality of semiconductor fins. A first etch is performed to etch the plurality of semiconductor fins such that a top surface of the plurality of semiconductor fins has a same height as a top surface of the isolation region. A second etch is performed selectively etching the isolation region to form a first recess in the isolation region laterally adjacent the semiconductor fins. A third etch is performed selectively etching the plurality of semiconductor fins to remove the plurality of semiconductor fins and to etch a second recess through the isolation region into the semiconductor substrate.