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- 01:49, 25 November 2024 Taiwan semiconductor manufacturing company, ltd. (20240379803). FIELD EFFECT TRANSISTOR WITH MERGED EPITAXY BACKSIDE CUT AND METHOD simplified abstract (hist) [4,921 bytes] Wikipatents (talk | contribs) (Creating a new page)
- 01:49, 25 November 2024 Taiwan semiconductor manufacturing company, ltd. (20240379802). DEVICE AND METHOD OF FABRICATING MULTIGATE DEVICES HAVING DIFFERENT CHANNEL CONFIGURATIONS simplified abstract (hist) [3,708 bytes] Wikipatents (talk | contribs) (Creating a new page)
- 01:49, 25 November 2024 Taiwan semiconductor manufacturing company, ltd. (20240379801). TUNING GATE LENGTHS IN MULTI-GATE FIELD EFFECT TRANSISTORS simplified abstract (hist) [4,512 bytes] Wikipatents (talk | contribs) (Creating a new page)
- 01:49, 25 November 2024 Taiwan semiconductor manufacturing company, ltd. (20240379800). NANO TRANSISTORS WITH SOURCE/DRAIN HAVING SIDE CONTACTS TO 2-D MATERIAL simplified abstract (hist) [4,016 bytes] Wikipatents (talk | contribs) (Creating a new page)
- 01:49, 25 November 2024 Taiwan semiconductor manufacturing company, ltd. (20240379799). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (hist) [3,418 bytes] Wikipatents (talk | contribs) (Creating a new page)
- 01:49, 25 November 2024 Taiwan semiconductor manufacturing company, ltd. (20240379797). TRANSISTOR INSULATING FINS simplified abstract (hist) [3,376 bytes] Wikipatents (talk | contribs) (Creating a new page)
- 01:49, 25 November 2024 Taiwan semiconductor manufacturing company, ltd. (20240379796). Forming Low-Resistance Capping Layer Over Metal Gate Electrode simplified abstract (hist) [5,329 bytes] Wikipatents (talk | contribs) (Creating a new page)
- 01:49, 25 November 2024 Taiwan semiconductor manufacturing company, ltd. (20240379793). SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (hist) [4,398 bytes] Wikipatents (talk | contribs) (Creating a new page)
- 01:49, 25 November 2024 Taiwan semiconductor manufacturing company, ltd. (20240379792). THIN FILM TRANSFER USING SUBSTRATE WITH ETCH STOP LAYER AND DIFFUSION BARRIER LAYER simplified abstract (hist) [4,252 bytes] Wikipatents (talk | contribs) (Creating a new page)
- 01:49, 25 November 2024 Taiwan semiconductor manufacturing company, ltd. (20240379790). SEMICONDUCTOR STRUCTURE WITH ENLARGED GATE ELECTRODE STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (hist) [4,347 bytes] Wikipatents (talk | contribs) (Creating a new page)
- 01:49, 25 November 2024 Taiwan semiconductor manufacturing company, ltd. (20240379789). TRANSISTOR DEVICE WITH RECESSED GATE STRUCTURE simplified abstract (hist) [5,495 bytes] Wikipatents (talk | contribs) (Creating a new page)
- 01:49, 25 November 2024 Taiwan semiconductor manufacturing company, ltd. (20240379788). THICKER CORNER OF A GATE DIELECTRIC STRUCTURE AROUND A RECESSED GATE ELECTRODE FOR AN MV DEVICE simplified abstract (hist) [4,862 bytes] Wikipatents (talk | contribs) (Creating a new page)
- 01:48, 25 November 2024 Taiwan semiconductor manufacturing company, ltd. (20240379785). Protective Liner for Source/Drain Contact to Prevent Electrical Bridging While Minimizing Resistance simplified abstract (hist) [3,598 bytes] Wikipatents (talk | contribs) (Creating a new page)
- 01:48, 25 November 2024 Taiwan semiconductor manufacturing company, ltd. (20240379783). DRAIN SIDE RECESS FOR BACK-SIDE POWER RAIL DEVICE simplified abstract (hist) [3,700 bytes] Wikipatents (talk | contribs) (Creating a new page)
- 01:48, 25 November 2024 Taiwan semiconductor manufacturing company, ltd. (20240379782). GATE-ALL-AROUND DEVICES HAVING SELF-ALIGNED CAPPING BETWEEN CHANNEL AND BACKSIDE POWER RAIL simplified abstract (hist) [4,235 bytes] Wikipatents (talk | contribs) (Creating a new page)
- 01:48, 25 November 2024 Taiwan semiconductor manufacturing company, ltd. (20240379781). Backside Source/Drain Contacts and Methods of Forming the Same simplified abstract (hist) [4,210 bytes] Wikipatents (talk | contribs) (Creating a new page)
- 01:48, 25 November 2024 Taiwan semiconductor manufacturing company, ltd. (20240379778). Memory Array Isolation Structures simplified abstract (hist) [3,979 bytes] Wikipatents (talk | contribs) (Creating a new page)
- 01:48, 25 November 2024 Taiwan semiconductor manufacturing company, ltd. (20240379777). NFET with Aluminum-Free Work-Function Layer and Method Forming Same simplified abstract (hist) [3,800 bytes] Wikipatents (talk | contribs) (Creating a new page)
- 01:48, 25 November 2024 Taiwan semiconductor manufacturing company, ltd. (20240379776). SELECTIVE ETCHING TO INCREASE THRESHOLD VOLTAGE SPREAD simplified abstract (hist) [3,752 bytes] Wikipatents (talk | contribs) (Creating a new page)
- 01:48, 25 November 2024 Taiwan semiconductor manufacturing company, ltd. (20240379775). PROCESS AND STRUCTURE FOR SOURCE/DRAIN CONTACTS simplified abstract (hist) [3,811 bytes] Wikipatents (talk | contribs) (Creating a new page)
