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- 10:03, 19 September 2024 18672076. SEMICONDUCTOR STRUCTURE WITH A BIT LINE IN A DIFFERENT CONFIGURATION THAN A LOCAL INTERCONNECT LINE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.) (hist) [4,581 bytes] Wikipatents (talk | contribs) (Creating a new page)
- 10:03, 19 September 2024 18675225. BARRIER LAYER ON A PIEZOELECTRIC-DEVICE PAD simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.) (hist) [3,922 bytes] Wikipatents (talk | contribs) (Creating a new page)
- 10:03, 19 September 2024 18348422. Monotonic Hybrid Capacitor Digital-To-Analog Converter simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.) (hist) [3,750 bytes] Wikipatents (talk | contribs) (Creating a new page)
- 10:03, 19 September 2024 18672981. FUSE STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.) (hist) [3,735 bytes] Wikipatents (talk | contribs) (Creating a new page)
- 10:02, 19 September 2024 18674081. INTEGRATED CIRCUIT AND AN OPERATION METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.) (hist) [3,938 bytes] Wikipatents (talk | contribs) (Creating a new page)
- 10:02, 19 September 2024 18670779. SEMICONDUCTOR STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.) (hist) [3,764 bytes] Wikipatents (talk | contribs) (Creating a new page)
- 10:02, 19 September 2024 18669089. SEMICONDUCTOR STRUCTURE WITH BARRIER AND METHOD FOR MANUFACTURING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.) (hist) [3,810 bytes] Wikipatents (talk | contribs) (Creating a new page)
- 10:02, 19 September 2024 18673746. NANO-SHEET-BASED COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR DEVICES WITH ASYMMETRIC INNER SPACERS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.) (hist) [4,857 bytes] Wikipatents (talk | contribs) (Creating a new page)
- 10:02, 19 September 2024 18673596. FET SILICIDE AND FABRICATION METHODS THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.) (hist) [4,252 bytes] Wikipatents (talk | contribs) (Creating a new page)
- 10:02, 19 September 2024 18670123. SEMICONDUCTOR DEVICE HAVING FINS AND METHOD OF FABRICATING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.) (hist) [4,149 bytes] Wikipatents (talk | contribs) (Creating a new page)
- 10:02, 19 September 2024 18670557. SEMICONDUCTOR DEVICE WITH METAL CAP ON GATE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.) (hist) [3,850 bytes] Wikipatents (talk | contribs) (Creating a new page)
- 10:02, 19 September 2024 18673615. FIN FIELD-EFFECT TRANSISTOR DEVICE HAVING HYBRID WORK FUNCTION LAYER STACK simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.) (hist) [3,845 bytes] Wikipatents (talk | contribs) (Creating a new page)
- 10:02, 19 September 2024 18671151. SEMICONDUCTOR STRUCTURE HAVING DIELECTRIC STRUCTURE EXTENDING INTO SECOND CAVITY OF SEMICONDUCTOR FIN simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.) (hist) [4,648 bytes] Wikipatents (talk | contribs) (Creating a new page)
- 10:02, 19 September 2024 18674285. MULTI-GATE DEVICE FABRICATION AND STRUCTURES THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.) (hist) [4,653 bytes] Wikipatents (talk | contribs) (Creating a new page)
- 10:01, 19 September 2024 18669052. AIR GAP IN INNER SPACERS AND METHODS OF FABRICATING THE SAME IN FIELD-EFFECT TRANSISTORS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.) (hist) [4,037 bytes] Wikipatents (talk | contribs) (Creating a new page)
- 10:01, 19 September 2024 18355688. GATE DIELECTRIC LAYERS FOR STACKED MULTI-GATE DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.) (hist) [4,156 bytes] Wikipatents (talk | contribs) (Creating a new page)
- 10:01, 19 September 2024 18182921. METHOD AND DEVICE RELATED TO SEAMLESS METAL CONTACT simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.) (hist) [5,332 bytes] Wikipatents (talk | contribs) (Creating a new page)
- 10:01, 19 September 2024 18669059. ISOLATION STRUCTURE FOR ISOLATING EPITAXIALLY GROWN SOURCE/DRAIN REGIONS AND METHOD OF FABRICATION THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.) (hist) [3,984 bytes] Wikipatents (talk | contribs) (Creating a new page)
- 10:01, 19 September 2024 18674589. INTRODUCING FLUORINE TO GATE AFTER WORK FUNCTION METAL DEPOSITION simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.) (hist) [2,705 bytes] Wikipatents (talk | contribs) (Creating a new page)
- 10:01, 19 September 2024 18669199. EFFECTIVE WORK FUNCTION TUNING VIA SILICIDE INDUCED INTERFACE DIPOLE MODULATION FOR METAL GATES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.) (hist) [4,843 bytes] Wikipatents (talk | contribs) (Creating a new page)
