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Create the page "H01G4/10" on this wiki! See also the search results found.
- [[Category:H01G4/12]] [[Category:H01G4/10]]2 KB (279 words) - 05:53, 5 December 2023
- ...n the areas of [[:Category:H01G4/30|H01G4/30]] (10), [[:Category:H01G4/008|H01G4/008]] (7), [[:Category:H01F27/32|H01F27/32]] (5), [[:Category:H03H9/02|H03H IPC Code(s): C12M1/00, G01N15/02, B01D39/10, B01D39/2016 KB (2,199 words) - 09:01, 30 January 2024
- == Top 10 Technology Areas == * [[:Category:CPC_H01G4/30|H01G4/30]] (CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIG5 KB (611 words) - 14:56, 21 July 2024
- ...content in the end-surface-side conductive resin layer portion is between 10% and 60%. ...t in the end-surface-side conductive resin layer portion is at least about 10% and no more than about 60%.3 KB (479 words) - 07:34, 25 July 2024
- * Central solid solution layer located about 10 μm from an end portion ...electric layer, and including a central solid solution layer located about 10 μm or more from an end portion in a facing portion in a length direction a3 KB (413 words) - 05:57, 19 September 2024
- ...nd metal in the solid-dissolved layer ranges from about 0.1 mol % to about 10 mol % in 100 mol of the first metal. ...content in the solid-dissolved layer ranging from about 0.1 mol % to about 10 mol %3 KB (487 words) - 03:37, 10 September 2024
- == Top 10 Technology Areas == * [[:Category:CPC_H01G4/33|H01G4/33]] (CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIG9 KB (987 words) - 23:46, 18 July 2024
- ...content in the end-surface-side conductive resin layer portion is between 10% and 60%. ...t in the end-surface-side conductive resin layer portion is at least about 10% and no more than about 60%.4 KB (494 words) - 03:02, 26 July 2024
- * Central solid solution layer is located about 10 μm or more from an end portion ...electric layer, and including a central solid solution layer located about 10 �m or more from an end portion in a facing portion in a length direction3 KB (420 words) - 03:15, 19 September 2024
- [[Category:H01C7/10]] [[Category:H01G4/008]]4 KB (593 words) - 05:50, 28 June 2024
- [[Category:H01G4/10]] [[Category:H01G4/008]]3 KB (366 words) - 07:19, 20 February 2024
- [[Category:H01G4/10]] [[Category:H01G4/30]]3 KB (410 words) - 03:55, 4 January 2024
- ...nd metal in the solid-dissolved layer is about 0.1 mol % or more and about 10 mol % or less in 100 mol of the first metal. ...nd metal in the solid-dissolved layer is about 0.1 mol % or more and about 10 mol % or less in 100 mol of the first metal.4 KB (615 words) - 08:04, 9 September 2024
- [[Category:H01G4/10]] [[Category:H01G4/33]]3 KB (452 words) - 17:47, 1 January 2024
- ...i and In. In the one of the plurality of internal electrodes, among points 10 nm away from an interface with one of the plurality of dielectric layers, a [[Category:H01G4/30]]4 KB (553 words) - 05:29, 26 July 2024
- [[Category:H01G4/33]] [[Category:H01G4/008]]4 KB (585 words) - 12:23, 14 December 2023
- [[Category:H01G4/008]] [[Category:H01G4/10]]3 KB (413 words) - 04:21, 9 February 2024
- [[Category:H01G2/10]] [[Category:H01G4/012]]3 KB (452 words) - 08:51, 27 September 2024
- [[Category:H01G4/10]] [[Category:H01G4/008]]3 KB (476 words) - 09:11, 1 August 2024
- [[Category:H01G4/10]] [[Category:H01G4/30]]3 KB (449 words) - 00:45, 4 January 2024