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Create the page "ION BEAM APPLICATIONS" on this wiki! See also the search results found.
- =APPLYING INERT ION BEAM ETCHING FOR IMPROVING A PROFILE AND REPAIRING SIDEWALL DAMAGE FOR PHASE CHA ==APPLYING INERT ION BEAM ETCHING FOR IMPROVING A PROFILE AND REPAIRING SIDEWALL DAMAGE FOR PHASE CHA4 KB (539 words) - 05:27, 4 January 2024
- =ADJUSTABLE SUPPORT FOR ARC CHAMBER OF ION SOURCE= ==ADJUSTABLE SUPPORT FOR ARC CHAMBER OF ION SOURCE - A simplified explanation of the abstract==4 KB (576 words) - 07:06, 22 August 2024
- =XRAY DIFFRACTION ANGLE VERIFICATION IN AN ION IMPLANTER= ==XRAY DIFFRACTION ANGLE VERIFICATION IN AN ION IMPLANTER - A simplified explanation of the abstract==4 KB (612 words) - 04:25, 8 July 2024
- =FABRICATION OF NOVEL DEVICES USING ION BEAMS= ==FABRICATION OF NOVEL DEVICES USING ION BEAMS - A simplified explanation of the abstract==4 KB (559 words) - 05:35, 4 July 2024
- ...d particle beam. The apparatus includes an ion beam column and an electron beam column, both of which generate and direct their respective beams. The sampl * The apparatus includes an ion beam column and an electron beam column.3 KB (380 words) - 05:31, 2 February 2024
- ...VERY APPARATUS FOR USE IN ION-BASED RADIOTHERAPY AND A PLANNING METHOD FOR ION-BASED RADIOTHERAPY= ...VERY APPARATUS FOR USE IN ION-BASED RADIOTHERAPY AND A PLANNING METHOD FOR ION-BASED RADIOTHERAPY - A simplified explanation of the abstract==4 KB (523 words) - 09:34, 1 February 2024
- =CIRCULAR ACCELERATOR, PARTICLE THERAPY SYSTEM, AND ION SOURCE= ==CIRCULAR ACCELERATOR, PARTICLE THERAPY SYSTEM, AND ION SOURCE - A simplified explanation of the abstract==3 KB (418 words) - 05:43, 8 July 2024
- =XRAY DIFFRACTION ANGLE VERIFICATION IN AN ION IMPLANTER= ==XRAY DIFFRACTION ANGLE VERIFICATION IN AN ION IMPLANTER - A simplified explanation of the abstract==5 KB (701 words) - 04:25, 8 July 2024
- ...patent application describes a mass spectrometer that utilizes both an ion beam and laser light to analyze samples. * The beam irradiator emits an ion beam to irradiate a sample surface.3 KB (451 words) - 07:16, 27 September 2024
- ...ng to acceleration gaps, and also define RF quadrupoles to defocus the ion beam in a perpendicular direction at the acceleration gaps. * The drift tubes guide an ion beam along a specific direction.3 KB (457 words) - 02:57, 16 April 2024
- '''Summary of the patent applications from California Institute of Technology on July 25th, 2024''' ...pation, ion focusing efficiency, and sample processing accuracy in various applications such as electronic cooling, mass spectrometry, and medical diagnostics.3 KB (298 words) - 07:48, 26 July 2024
- =FABRICATION OF NOVEL DEVICES USING ION BEAMS= ==FABRICATION OF NOVEL DEVICES USING ION BEAMS - A simplified explanation of the abstract==3 KB (508 words) - 06:55, 5 July 2024
- =DEVICE AND METHOD FOR TUNING A CHARGED PARTICLE BEAM POSITION= [[:Category:ION BEAM APPLICATIONS|ION BEAM APPLICATIONS]]4 KB (664 words) - 10:52, 25 January 2024
- 18367559. PROCESSING APPARATUS AND PROCESSING METHOD simplified abstract (Samsung Display Co., LTD.)...rget while maintaining a predetermined temperature or higher to facilitate ion-exchange between the processing target and materials of the mixture. * The second processing unit irradiates a beam into the same region of the processing target.4 KB (523 words) - 01:27, 6 June 2024
- ...lectrode using processes such as forming a carbon layer, performing an ion beam etch process, and conducting an impurity doping process on the carbon layer * Ion beam etch process for planarization and hardening3 KB (404 words) - 06:05, 12 July 2024
- ...ed temperature or higher. This process allows for efficient and controlled ion-exchange to occur. * The second processing unit irradiates a beam into the same region of the processing target.4 KB (501 words) - 07:18, 31 May 2024
- =MOLTEN LIQUID TRANSPORT FOR TUNABLE VAPORIZATION IN ION SOURCES= ==MOLTEN LIQUID TRANSPORT FOR TUNABLE VAPORIZATION IN ION SOURCES - A simplified explanation of the abstract==3 KB (390 words) - 18:39, 1 January 2024
- =MEMORY STRUCTURE WITH NON-ION BEAM ETCHED MTJ AND TOP ELECTRODE= ==MEMORY STRUCTURE WITH NON-ION BEAM ETCHED MTJ AND TOP ELECTRODE - A simplified explanation of the abstract==4 KB (517 words) - 02:14, 10 June 2024
- ...n includes a drift tube assembly with multiple drift tubes to guide an ion beam, a multi-gap configuration for acceleration, powered drift tubes receiving * The drift tube assembly consists of multiple drift tubes that guide an ion beam along a specific direction.4 KB (638 words) - 05:00, 25 March 2024
- =ION EXTRACTION AND FOCUSING FROM A FIELD-FREE REGION TO AN ION MOBILITY SPECTROMETER AT ATMOSPHERIC PRESSURE= ==ION EXTRACTION AND FOCUSING FROM A FIELD-FREE REGION TO AN ION MOBILITY SPECTROMETER AT ATMOSPHERIC PRESSURE - A simplified explanation of4 KB (628 words) - 03:25, 9 February 2024