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Citation styles for 18405418. METHOD FOR PRODUCING A VERTICAL SEMICONDUCTOR DEVICE WITH EPITAXIALLY GROWN III-V EPITAXY USING THE SUBSTRATE SEVERAL TIMES, AND CORRESPONDING SEMICONDUCTOR DEVICE, IN PARTICULAR BASED ON GALLIUM NITRIDE simplified abstract (Robert Bosch GmbH)

APA style

18405418. METHOD FOR PRODUCING A VERTICAL SEMICONDUCTOR DEVICE WITH EPITAXIALLY GROWN III-V EPITAXY USING THE SUBSTRATE SEVERAL TIMES, AND CORRESPONDING SEMICONDUCTOR DEVICE, IN PARTICULAR BASED ON GALLIUM NITRIDE simplified abstract (Robert Bosch GmbH). (2024, July 12). WikiPatents, . Retrieved 02:48, October 22, 2024 from http://wikipatents.org/index.php?title=18405418._METHOD_FOR_PRODUCING_A_VERTICAL_SEMICONDUCTOR_DEVICE_WITH_EPITAXIALLY_GROWN_III-V_EPITAXY_USING_THE_SUBSTRATE_SEVERAL_TIMES,_AND_CORRESPONDING_SEMICONDUCTOR_DEVICE,_IN_PARTICULAR_BASED_ON_GALLIUM_NITRIDE_simplified_abstract_(Robert_Bosch_GmbH)&oldid=94214.

MLA style

"18405418. METHOD FOR PRODUCING A VERTICAL SEMICONDUCTOR DEVICE WITH EPITAXIALLY GROWN III-V EPITAXY USING THE SUBSTRATE SEVERAL TIMES, AND CORRESPONDING SEMICONDUCTOR DEVICE, IN PARTICULAR BASED ON GALLIUM NITRIDE simplified abstract (Robert Bosch GmbH)." WikiPatents, . 12 Jul 2024, 05:16 UTC. 22 Oct 2024, 02:48 <http://wikipatents.org/index.php?title=18405418._METHOD_FOR_PRODUCING_A_VERTICAL_SEMICONDUCTOR_DEVICE_WITH_EPITAXIALLY_GROWN_III-V_EPITAXY_USING_THE_SUBSTRATE_SEVERAL_TIMES,_AND_CORRESPONDING_SEMICONDUCTOR_DEVICE,_IN_PARTICULAR_BASED_ON_GALLIUM_NITRIDE_simplified_abstract_(Robert_Bosch_GmbH)&oldid=94214>.

MHRA style

WikiPatents contributors, '18405418. METHOD FOR PRODUCING A VERTICAL SEMICONDUCTOR DEVICE WITH EPITAXIALLY GROWN III-V EPITAXY USING THE SUBSTRATE SEVERAL TIMES, AND CORRESPONDING SEMICONDUCTOR DEVICE, IN PARTICULAR BASED ON GALLIUM NITRIDE simplified abstract (Robert Bosch GmbH)', WikiPatents, , 12 July 2024, 05:16 UTC, <http://wikipatents.org/index.php?title=18405418._METHOD_FOR_PRODUCING_A_VERTICAL_SEMICONDUCTOR_DEVICE_WITH_EPITAXIALLY_GROWN_III-V_EPITAXY_USING_THE_SUBSTRATE_SEVERAL_TIMES,_AND_CORRESPONDING_SEMICONDUCTOR_DEVICE,_IN_PARTICULAR_BASED_ON_GALLIUM_NITRIDE_simplified_abstract_(Robert_Bosch_GmbH)&oldid=94214> [accessed 22 October 2024]

Chicago style

WikiPatents contributors, "18405418. METHOD FOR PRODUCING A VERTICAL SEMICONDUCTOR DEVICE WITH EPITAXIALLY GROWN III-V EPITAXY USING THE SUBSTRATE SEVERAL TIMES, AND CORRESPONDING SEMICONDUCTOR DEVICE, IN PARTICULAR BASED ON GALLIUM NITRIDE simplified abstract (Robert Bosch GmbH)," WikiPatents, , http://wikipatents.org/index.php?title=18405418._METHOD_FOR_PRODUCING_A_VERTICAL_SEMICONDUCTOR_DEVICE_WITH_EPITAXIALLY_GROWN_III-V_EPITAXY_USING_THE_SUBSTRATE_SEVERAL_TIMES,_AND_CORRESPONDING_SEMICONDUCTOR_DEVICE,_IN_PARTICULAR_BASED_ON_GALLIUM_NITRIDE_simplified_abstract_(Robert_Bosch_GmbH)&oldid=94214 (accessed October 22, 2024).

CBE/CSE style

WikiPatents contributors. 18405418. METHOD FOR PRODUCING A VERTICAL SEMICONDUCTOR DEVICE WITH EPITAXIALLY GROWN III-V EPITAXY USING THE SUBSTRATE SEVERAL TIMES, AND CORRESPONDING SEMICONDUCTOR DEVICE, IN PARTICULAR BASED ON GALLIUM NITRIDE simplified abstract (Robert Bosch GmbH) [Internet]. WikiPatents, ; 2024 Jul 12, 05:16 UTC [cited 2024 Oct 22]. Available from: http://wikipatents.org/index.php?title=18405418._METHOD_FOR_PRODUCING_A_VERTICAL_SEMICONDUCTOR_DEVICE_WITH_EPITAXIALLY_GROWN_III-V_EPITAXY_USING_THE_SUBSTRATE_SEVERAL_TIMES,_AND_CORRESPONDING_SEMICONDUCTOR_DEVICE,_IN_PARTICULAR_BASED_ON_GALLIUM_NITRIDE_simplified_abstract_(Robert_Bosch_GmbH)&oldid=94214.

Bluebook style

18405418. METHOD FOR PRODUCING A VERTICAL SEMICONDUCTOR DEVICE WITH EPITAXIALLY GROWN III-V EPITAXY USING THE SUBSTRATE SEVERAL TIMES, AND CORRESPONDING SEMICONDUCTOR DEVICE, IN PARTICULAR BASED ON GALLIUM NITRIDE simplified abstract (Robert Bosch GmbH), http://wikipatents.org/index.php?title=18405418._METHOD_FOR_PRODUCING_A_VERTICAL_SEMICONDUCTOR_DEVICE_WITH_EPITAXIALLY_GROWN_III-V_EPITAXY_USING_THE_SUBSTRATE_SEVERAL_TIMES,_AND_CORRESPONDING_SEMICONDUCTOR_DEVICE,_IN_PARTICULAR_BASED_ON_GALLIUM_NITRIDE_simplified_abstract_(Robert_Bosch_GmbH)&oldid=94214 (last visited October 22, 2024).

BibTeX entry

 @misc{ wiki:xxx,
   author = "WikiPatents",
   title = "18405418. METHOD FOR PRODUCING A VERTICAL SEMICONDUCTOR DEVICE WITH EPITAXIALLY GROWN III-V EPITAXY USING THE SUBSTRATE SEVERAL TIMES, AND CORRESPONDING SEMICONDUCTOR DEVICE, IN PARTICULAR BASED ON GALLIUM NITRIDE simplified abstract (Robert Bosch GmbH) --- WikiPatents{,} ",
   year = "2024",
   url = "http://wikipatents.org/index.php?title=18405418._METHOD_FOR_PRODUCING_A_VERTICAL_SEMICONDUCTOR_DEVICE_WITH_EPITAXIALLY_GROWN_III-V_EPITAXY_USING_THE_SUBSTRATE_SEVERAL_TIMES,_AND_CORRESPONDING_SEMICONDUCTOR_DEVICE,_IN_PARTICULAR_BASED_ON_GALLIUM_NITRIDE_simplified_abstract_(Robert_Bosch_GmbH)&oldid=94214",
   note = "[Online; accessed 22-October-2024]"
 }

When using the LaTeX package url (\usepackage{url} somewhere in the preamble) which tends to give much more nicely formatted web addresses, the following may be preferred:

 @misc{ wiki:xxx,
   author = "WikiPatents",
   title = "18405418. METHOD FOR PRODUCING A VERTICAL SEMICONDUCTOR DEVICE WITH EPITAXIALLY GROWN III-V EPITAXY USING THE SUBSTRATE SEVERAL TIMES, AND CORRESPONDING SEMICONDUCTOR DEVICE, IN PARTICULAR BASED ON GALLIUM NITRIDE simplified abstract (Robert Bosch GmbH) --- WikiPatents{,} ",
   year = "2024",
   url = "\url{http://wikipatents.org/index.php?title=18405418._METHOD_FOR_PRODUCING_A_VERTICAL_SEMICONDUCTOR_DEVICE_WITH_EPITAXIALLY_GROWN_III-V_EPITAXY_USING_THE_SUBSTRATE_SEVERAL_TIMES,_AND_CORRESPONDING_SEMICONDUCTOR_DEVICE,_IN_PARTICULAR_BASED_ON_GALLIUM_NITRIDE_simplified_abstract_(Robert_Bosch_GmbH)&oldid=94214}",
   note = "[Online; accessed 22-October-2024]"
 }