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Bibliographic details for 18597981. TWO-DIMENSIONAL (2D) MATERIAL FOR OXIDE SEMICONDUCTOR (OS) FERROELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- Page name: 18597981. TWO-DIMENSIONAL (2D) MATERIAL FOR OXIDE SEMICONDUCTOR (OS) FERROELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- Author: WikiPatents contributors
- Publisher: WikiPatents, .
- Date of last revision: 28 June 2024 04:51 UTC
- Date retrieved: 4 July 2024 08:52 UTC
- Permanent URL: http://wikipatents.org/index.php?title=18597981._TWO-DIMENSIONAL_(2D)_MATERIAL_FOR_OXIDE_SEMICONDUCTOR_(OS)_FERROELECTRIC_FIELD-EFFECT_TRANSISTOR_(FEFET)_DEVICE_simplified_abstract_(Taiwan_Semiconductor_Manufacturing_Company,_Ltd.)&oldid=79908
- Page Version ID: 79908
Citation styles for 18597981. TWO-DIMENSIONAL (2D) MATERIAL FOR OXIDE SEMICONDUCTOR (OS) FERROELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
APA style
18597981. TWO-DIMENSIONAL (2D) MATERIAL FOR OXIDE SEMICONDUCTOR (OS) FERROELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.). (2024, June 28). WikiPatents, . Retrieved 08:52, July 4, 2024 from http://wikipatents.org/index.php?title=18597981._TWO-DIMENSIONAL_(2D)_MATERIAL_FOR_OXIDE_SEMICONDUCTOR_(OS)_FERROELECTRIC_FIELD-EFFECT_TRANSISTOR_(FEFET)_DEVICE_simplified_abstract_(Taiwan_Semiconductor_Manufacturing_Company,_Ltd.)&oldid=79908.
MLA style
"18597981. TWO-DIMENSIONAL (2D) MATERIAL FOR OXIDE SEMICONDUCTOR (OS) FERROELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)." WikiPatents, . 28 Jun 2024, 04:51 UTC. 4 Jul 2024, 08:52 <http://wikipatents.org/index.php?title=18597981._TWO-DIMENSIONAL_(2D)_MATERIAL_FOR_OXIDE_SEMICONDUCTOR_(OS)_FERROELECTRIC_FIELD-EFFECT_TRANSISTOR_(FEFET)_DEVICE_simplified_abstract_(Taiwan_Semiconductor_Manufacturing_Company,_Ltd.)&oldid=79908>.
MHRA style
WikiPatents contributors, '18597981. TWO-DIMENSIONAL (2D) MATERIAL FOR OXIDE SEMICONDUCTOR (OS) FERROELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)', WikiPatents, , 28 June 2024, 04:51 UTC, <http://wikipatents.org/index.php?title=18597981._TWO-DIMENSIONAL_(2D)_MATERIAL_FOR_OXIDE_SEMICONDUCTOR_(OS)_FERROELECTRIC_FIELD-EFFECT_TRANSISTOR_(FEFET)_DEVICE_simplified_abstract_(Taiwan_Semiconductor_Manufacturing_Company,_Ltd.)&oldid=79908> [accessed 4 July 2024]
Chicago style
WikiPatents contributors, "18597981. TWO-DIMENSIONAL (2D) MATERIAL FOR OXIDE SEMICONDUCTOR (OS) FERROELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)," WikiPatents, , http://wikipatents.org/index.php?title=18597981._TWO-DIMENSIONAL_(2D)_MATERIAL_FOR_OXIDE_SEMICONDUCTOR_(OS)_FERROELECTRIC_FIELD-EFFECT_TRANSISTOR_(FEFET)_DEVICE_simplified_abstract_(Taiwan_Semiconductor_Manufacturing_Company,_Ltd.)&oldid=79908 (accessed July 4, 2024).
CBE/CSE style
WikiPatents contributors. 18597981. TWO-DIMENSIONAL (2D) MATERIAL FOR OXIDE SEMICONDUCTOR (OS) FERROELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.) [Internet]. WikiPatents, ; 2024 Jun 28, 04:51 UTC [cited 2024 Jul 4]. Available from: http://wikipatents.org/index.php?title=18597981._TWO-DIMENSIONAL_(2D)_MATERIAL_FOR_OXIDE_SEMICONDUCTOR_(OS)_FERROELECTRIC_FIELD-EFFECT_TRANSISTOR_(FEFET)_DEVICE_simplified_abstract_(Taiwan_Semiconductor_Manufacturing_Company,_Ltd.)&oldid=79908.
Bluebook style
18597981. TWO-DIMENSIONAL (2D) MATERIAL FOR OXIDE SEMICONDUCTOR (OS) FERROELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.), http://wikipatents.org/index.php?title=18597981._TWO-DIMENSIONAL_(2D)_MATERIAL_FOR_OXIDE_SEMICONDUCTOR_(OS)_FERROELECTRIC_FIELD-EFFECT_TRANSISTOR_(FEFET)_DEVICE_simplified_abstract_(Taiwan_Semiconductor_Manufacturing_Company,_Ltd.)&oldid=79908 (last visited July 4, 2024).
BibTeX entry
@misc{ wiki:xxx,
author = "WikiPatents",
title = "18597981. TWO-DIMENSIONAL (2D) MATERIAL FOR OXIDE SEMICONDUCTOR (OS) FERROELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.) --- WikiPatents{,} ",
year = "2024",
url = "http://wikipatents.org/index.php?title=18597981._TWO-DIMENSIONAL_(2D)_MATERIAL_FOR_OXIDE_SEMICONDUCTOR_(OS)_FERROELECTRIC_FIELD-EFFECT_TRANSISTOR_(FEFET)_DEVICE_simplified_abstract_(Taiwan_Semiconductor_Manufacturing_Company,_Ltd.)&oldid=79908",
note = "[Online; accessed 4-July-2024]"
}
When using the LaTeX package url (\usepackage{url} somewhere in the preamble) which tends to give much more nicely formatted web addresses, the following may be preferred:
@misc{ wiki:xxx,
author = "WikiPatents",
title = "18597981. TWO-DIMENSIONAL (2D) MATERIAL FOR OXIDE SEMICONDUCTOR (OS) FERROELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.) --- WikiPatents{,} ",
year = "2024",
url = "\url{http://wikipatents.org/index.php?title=18597981._TWO-DIMENSIONAL_(2D)_MATERIAL_FOR_OXIDE_SEMICONDUCTOR_(OS)_FERROELECTRIC_FIELD-EFFECT_TRANSISTOR_(FEFET)_DEVICE_simplified_abstract_(Taiwan_Semiconductor_Manufacturing_Company,_Ltd.)&oldid=79908}",
note = "[Online; accessed 4-July-2024]"
}
