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Bibliographic details for 18530050. HEMT TRANSISTOR OF THE NORMALLY OFF TYPE INCLUDING A TRENCH CONTAINING A GATE REGION AND FORMING AT LEAST ONE STEP, AND CORRESPONDING MANUFACTURING METHOD simplified abstract (STMICROELECTRONICS S.r.l.)
- Page name: 18530050. HEMT TRANSISTOR OF THE NORMALLY OFF TYPE INCLUDING A TRENCH CONTAINING A GATE REGION AND FORMING AT LEAST ONE STEP, AND CORRESPONDING MANUFACTURING METHOD simplified abstract (STMICROELECTRONICS S.r.l.)
- Author: WikiPatents contributors
- Publisher: WikiPatents, .
- Date of last revision: 6 June 2024 04:48 UTC
- Date retrieved: 28 June 2024 11:08 UTC
- Permanent URL: http://wikipatents.org/index.php?title=18530050._HEMT_TRANSISTOR_OF_THE_NORMALLY_OFF_TYPE_INCLUDING_A_TRENCH_CONTAINING_A_GATE_REGION_AND_FORMING_AT_LEAST_ONE_STEP,_AND_CORRESPONDING_MANUFACTURING_METHOD_simplified_abstract_(STMICROELECTRONICS_S.r.l.)&oldid=66089
- Page Version ID: 66089
Citation styles for 18530050. HEMT TRANSISTOR OF THE NORMALLY OFF TYPE INCLUDING A TRENCH CONTAINING A GATE REGION AND FORMING AT LEAST ONE STEP, AND CORRESPONDING MANUFACTURING METHOD simplified abstract (STMICROELECTRONICS S.r.l.)
APA style
18530050. HEMT TRANSISTOR OF THE NORMALLY OFF TYPE INCLUDING A TRENCH CONTAINING A GATE REGION AND FORMING AT LEAST ONE STEP, AND CORRESPONDING MANUFACTURING METHOD simplified abstract (STMICROELECTRONICS S.r.l.). (2024, June 6). WikiPatents, . Retrieved 11:08, June 28, 2024 from http://wikipatents.org/index.php?title=18530050._HEMT_TRANSISTOR_OF_THE_NORMALLY_OFF_TYPE_INCLUDING_A_TRENCH_CONTAINING_A_GATE_REGION_AND_FORMING_AT_LEAST_ONE_STEP,_AND_CORRESPONDING_MANUFACTURING_METHOD_simplified_abstract_(STMICROELECTRONICS_S.r.l.)&oldid=66089.
MLA style
"18530050. HEMT TRANSISTOR OF THE NORMALLY OFF TYPE INCLUDING A TRENCH CONTAINING A GATE REGION AND FORMING AT LEAST ONE STEP, AND CORRESPONDING MANUFACTURING METHOD simplified abstract (STMICROELECTRONICS S.r.l.)." WikiPatents, . 6 Jun 2024, 04:48 UTC. 28 Jun 2024, 11:08 <http://wikipatents.org/index.php?title=18530050._HEMT_TRANSISTOR_OF_THE_NORMALLY_OFF_TYPE_INCLUDING_A_TRENCH_CONTAINING_A_GATE_REGION_AND_FORMING_AT_LEAST_ONE_STEP,_AND_CORRESPONDING_MANUFACTURING_METHOD_simplified_abstract_(STMICROELECTRONICS_S.r.l.)&oldid=66089>.
MHRA style
WikiPatents contributors, '18530050. HEMT TRANSISTOR OF THE NORMALLY OFF TYPE INCLUDING A TRENCH CONTAINING A GATE REGION AND FORMING AT LEAST ONE STEP, AND CORRESPONDING MANUFACTURING METHOD simplified abstract (STMICROELECTRONICS S.r.l.)', WikiPatents, , 6 June 2024, 04:48 UTC, <http://wikipatents.org/index.php?title=18530050._HEMT_TRANSISTOR_OF_THE_NORMALLY_OFF_TYPE_INCLUDING_A_TRENCH_CONTAINING_A_GATE_REGION_AND_FORMING_AT_LEAST_ONE_STEP,_AND_CORRESPONDING_MANUFACTURING_METHOD_simplified_abstract_(STMICROELECTRONICS_S.r.l.)&oldid=66089> [accessed 28 June 2024]
Chicago style
WikiPatents contributors, "18530050. HEMT TRANSISTOR OF THE NORMALLY OFF TYPE INCLUDING A TRENCH CONTAINING A GATE REGION AND FORMING AT LEAST ONE STEP, AND CORRESPONDING MANUFACTURING METHOD simplified abstract (STMICROELECTRONICS S.r.l.)," WikiPatents, , http://wikipatents.org/index.php?title=18530050._HEMT_TRANSISTOR_OF_THE_NORMALLY_OFF_TYPE_INCLUDING_A_TRENCH_CONTAINING_A_GATE_REGION_AND_FORMING_AT_LEAST_ONE_STEP,_AND_CORRESPONDING_MANUFACTURING_METHOD_simplified_abstract_(STMICROELECTRONICS_S.r.l.)&oldid=66089 (accessed June 28, 2024).
CBE/CSE style
WikiPatents contributors. 18530050. HEMT TRANSISTOR OF THE NORMALLY OFF TYPE INCLUDING A TRENCH CONTAINING A GATE REGION AND FORMING AT LEAST ONE STEP, AND CORRESPONDING MANUFACTURING METHOD simplified abstract (STMICROELECTRONICS S.r.l.) [Internet]. WikiPatents, ; 2024 Jun 6, 04:48 UTC [cited 2024 Jun 28]. Available from: http://wikipatents.org/index.php?title=18530050._HEMT_TRANSISTOR_OF_THE_NORMALLY_OFF_TYPE_INCLUDING_A_TRENCH_CONTAINING_A_GATE_REGION_AND_FORMING_AT_LEAST_ONE_STEP,_AND_CORRESPONDING_MANUFACTURING_METHOD_simplified_abstract_(STMICROELECTRONICS_S.r.l.)&oldid=66089.
Bluebook style
18530050. HEMT TRANSISTOR OF THE NORMALLY OFF TYPE INCLUDING A TRENCH CONTAINING A GATE REGION AND FORMING AT LEAST ONE STEP, AND CORRESPONDING MANUFACTURING METHOD simplified abstract (STMICROELECTRONICS S.r.l.), http://wikipatents.org/index.php?title=18530050._HEMT_TRANSISTOR_OF_THE_NORMALLY_OFF_TYPE_INCLUDING_A_TRENCH_CONTAINING_A_GATE_REGION_AND_FORMING_AT_LEAST_ONE_STEP,_AND_CORRESPONDING_MANUFACTURING_METHOD_simplified_abstract_(STMICROELECTRONICS_S.r.l.)&oldid=66089 (last visited June 28, 2024).
BibTeX entry
@misc{ wiki:xxx, author = "WikiPatents", title = "18530050. HEMT TRANSISTOR OF THE NORMALLY OFF TYPE INCLUDING A TRENCH CONTAINING A GATE REGION AND FORMING AT LEAST ONE STEP, AND CORRESPONDING MANUFACTURING METHOD simplified abstract (STMICROELECTRONICS S.r.l.) --- WikiPatents{,} ", year = "2024", url = "http://wikipatents.org/index.php?title=18530050._HEMT_TRANSISTOR_OF_THE_NORMALLY_OFF_TYPE_INCLUDING_A_TRENCH_CONTAINING_A_GATE_REGION_AND_FORMING_AT_LEAST_ONE_STEP,_AND_CORRESPONDING_MANUFACTURING_METHOD_simplified_abstract_(STMICROELECTRONICS_S.r.l.)&oldid=66089", note = "[Online; accessed 28-June-2024]" }
When using the LaTeX package url (\usepackage{url}
somewhere in the preamble) which tends to give much more nicely formatted web addresses, the following may be preferred:
@misc{ wiki:xxx, author = "WikiPatents", title = "18530050. HEMT TRANSISTOR OF THE NORMALLY OFF TYPE INCLUDING A TRENCH CONTAINING A GATE REGION AND FORMING AT LEAST ONE STEP, AND CORRESPONDING MANUFACTURING METHOD simplified abstract (STMICROELECTRONICS S.r.l.) --- WikiPatents{,} ", year = "2024", url = "\url{http://wikipatents.org/index.php?title=18530050._HEMT_TRANSISTOR_OF_THE_NORMALLY_OFF_TYPE_INCLUDING_A_TRENCH_CONTAINING_A_GATE_REGION_AND_FORMING_AT_LEAST_ONE_STEP,_AND_CORRESPONDING_MANUFACTURING_METHOD_simplified_abstract_(STMICROELECTRONICS_S.r.l.)&oldid=66089}", note = "[Online; accessed 28-June-2024]" }