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Bibliographic details for 18432985. STRUCTURE AND METHOD FOR VERTICAL TUNNELING FIELD EFFECT TRANSISTOR WITH LEVELED SOURCE AND DRAIN simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- Page name: 18432985. STRUCTURE AND METHOD FOR VERTICAL TUNNELING FIELD EFFECT TRANSISTOR WITH LEVELED SOURCE AND DRAIN simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- Author: WikiPatents contributors
- Publisher: WikiPatents, .
- Date of last revision: 6 June 2024 02:24 UTC
- Date retrieved: 2 July 2024 07:31 UTC
- Permanent URL: http://wikipatents.org/index.php?title=18432985._STRUCTURE_AND_METHOD_FOR_VERTICAL_TUNNELING_FIELD_EFFECT_TRANSISTOR_WITH_LEVELED_SOURCE_AND_DRAIN_simplified_abstract_(Taiwan_Semiconductor_Manufacturing_Company,_Ltd.)&oldid=64715
- Page Version ID: 64715
Citation styles for 18432985. STRUCTURE AND METHOD FOR VERTICAL TUNNELING FIELD EFFECT TRANSISTOR WITH LEVELED SOURCE AND DRAIN simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
APA style
18432985. STRUCTURE AND METHOD FOR VERTICAL TUNNELING FIELD EFFECT TRANSISTOR WITH LEVELED SOURCE AND DRAIN simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.). (2024, June 6). WikiPatents, . Retrieved 07:31, July 2, 2024 from http://wikipatents.org/index.php?title=18432985._STRUCTURE_AND_METHOD_FOR_VERTICAL_TUNNELING_FIELD_EFFECT_TRANSISTOR_WITH_LEVELED_SOURCE_AND_DRAIN_simplified_abstract_(Taiwan_Semiconductor_Manufacturing_Company,_Ltd.)&oldid=64715.
MLA style
"18432985. STRUCTURE AND METHOD FOR VERTICAL TUNNELING FIELD EFFECT TRANSISTOR WITH LEVELED SOURCE AND DRAIN simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)." WikiPatents, . 6 Jun 2024, 02:24 UTC. 2 Jul 2024, 07:31 <http://wikipatents.org/index.php?title=18432985._STRUCTURE_AND_METHOD_FOR_VERTICAL_TUNNELING_FIELD_EFFECT_TRANSISTOR_WITH_LEVELED_SOURCE_AND_DRAIN_simplified_abstract_(Taiwan_Semiconductor_Manufacturing_Company,_Ltd.)&oldid=64715>.
MHRA style
WikiPatents contributors, '18432985. STRUCTURE AND METHOD FOR VERTICAL TUNNELING FIELD EFFECT TRANSISTOR WITH LEVELED SOURCE AND DRAIN simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)', WikiPatents, , 6 June 2024, 02:24 UTC, <http://wikipatents.org/index.php?title=18432985._STRUCTURE_AND_METHOD_FOR_VERTICAL_TUNNELING_FIELD_EFFECT_TRANSISTOR_WITH_LEVELED_SOURCE_AND_DRAIN_simplified_abstract_(Taiwan_Semiconductor_Manufacturing_Company,_Ltd.)&oldid=64715> [accessed 2 July 2024]
Chicago style
WikiPatents contributors, "18432985. STRUCTURE AND METHOD FOR VERTICAL TUNNELING FIELD EFFECT TRANSISTOR WITH LEVELED SOURCE AND DRAIN simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)," WikiPatents, , http://wikipatents.org/index.php?title=18432985._STRUCTURE_AND_METHOD_FOR_VERTICAL_TUNNELING_FIELD_EFFECT_TRANSISTOR_WITH_LEVELED_SOURCE_AND_DRAIN_simplified_abstract_(Taiwan_Semiconductor_Manufacturing_Company,_Ltd.)&oldid=64715 (accessed July 2, 2024).
CBE/CSE style
WikiPatents contributors. 18432985. STRUCTURE AND METHOD FOR VERTICAL TUNNELING FIELD EFFECT TRANSISTOR WITH LEVELED SOURCE AND DRAIN simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.) [Internet]. WikiPatents, ; 2024 Jun 6, 02:24 UTC [cited 2024 Jul 2]. Available from: http://wikipatents.org/index.php?title=18432985._STRUCTURE_AND_METHOD_FOR_VERTICAL_TUNNELING_FIELD_EFFECT_TRANSISTOR_WITH_LEVELED_SOURCE_AND_DRAIN_simplified_abstract_(Taiwan_Semiconductor_Manufacturing_Company,_Ltd.)&oldid=64715.
Bluebook style
18432985. STRUCTURE AND METHOD FOR VERTICAL TUNNELING FIELD EFFECT TRANSISTOR WITH LEVELED SOURCE AND DRAIN simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.), http://wikipatents.org/index.php?title=18432985._STRUCTURE_AND_METHOD_FOR_VERTICAL_TUNNELING_FIELD_EFFECT_TRANSISTOR_WITH_LEVELED_SOURCE_AND_DRAIN_simplified_abstract_(Taiwan_Semiconductor_Manufacturing_Company,_Ltd.)&oldid=64715 (last visited July 2, 2024).
BibTeX entry
@misc{ wiki:xxx, author = "WikiPatents", title = "18432985. STRUCTURE AND METHOD FOR VERTICAL TUNNELING FIELD EFFECT TRANSISTOR WITH LEVELED SOURCE AND DRAIN simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.) --- WikiPatents{,} ", year = "2024", url = "http://wikipatents.org/index.php?title=18432985._STRUCTURE_AND_METHOD_FOR_VERTICAL_TUNNELING_FIELD_EFFECT_TRANSISTOR_WITH_LEVELED_SOURCE_AND_DRAIN_simplified_abstract_(Taiwan_Semiconductor_Manufacturing_Company,_Ltd.)&oldid=64715", note = "[Online; accessed 2-July-2024]" }
When using the LaTeX package url (\usepackage{url}
somewhere in the preamble) which tends to give much more nicely formatted web addresses, the following may be preferred:
@misc{ wiki:xxx, author = "WikiPatents", title = "18432985. STRUCTURE AND METHOD FOR VERTICAL TUNNELING FIELD EFFECT TRANSISTOR WITH LEVELED SOURCE AND DRAIN simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.) --- WikiPatents{,} ", year = "2024", url = "\url{http://wikipatents.org/index.php?title=18432985._STRUCTURE_AND_METHOD_FOR_VERTICAL_TUNNELING_FIELD_EFFECT_TRANSISTOR_WITH_LEVELED_SOURCE_AND_DRAIN_simplified_abstract_(Taiwan_Semiconductor_Manufacturing_Company,_Ltd.)&oldid=64715}", note = "[Online; accessed 2-July-2024]" }