Cite This Page

Citation styles for 18421681. GATE RESISTANCE REDUCTION THROUGH LOW-RESISTIVITY CONDUCTIVE LAYER simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

APA style

18421681. GATE RESISTANCE REDUCTION THROUGH LOW-RESISTIVITY CONDUCTIVE LAYER simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.). (2024, May 24). WikiPatents, . Retrieved 05:16, June 28, 2024 from http://wikipatents.org/index.php?title=18421681._GATE_RESISTANCE_REDUCTION_THROUGH_LOW-RESISTIVITY_CONDUCTIVE_LAYER_simplified_abstract_(Taiwan_Semiconductor_Manufacturing_Co.,_Ltd.)&oldid=61305.

MLA style

"18421681. GATE RESISTANCE REDUCTION THROUGH LOW-RESISTIVITY CONDUCTIVE LAYER simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)." WikiPatents, . 24 May 2024, 07:13 UTC. 28 Jun 2024, 05:16 <http://wikipatents.org/index.php?title=18421681._GATE_RESISTANCE_REDUCTION_THROUGH_LOW-RESISTIVITY_CONDUCTIVE_LAYER_simplified_abstract_(Taiwan_Semiconductor_Manufacturing_Co.,_Ltd.)&oldid=61305>.

MHRA style

WikiPatents contributors, '18421681. GATE RESISTANCE REDUCTION THROUGH LOW-RESISTIVITY CONDUCTIVE LAYER simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)', WikiPatents, , 24 May 2024, 07:13 UTC, <http://wikipatents.org/index.php?title=18421681._GATE_RESISTANCE_REDUCTION_THROUGH_LOW-RESISTIVITY_CONDUCTIVE_LAYER_simplified_abstract_(Taiwan_Semiconductor_Manufacturing_Co.,_Ltd.)&oldid=61305> [accessed 28 June 2024]

Chicago style

WikiPatents contributors, "18421681. GATE RESISTANCE REDUCTION THROUGH LOW-RESISTIVITY CONDUCTIVE LAYER simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)," WikiPatents, , http://wikipatents.org/index.php?title=18421681._GATE_RESISTANCE_REDUCTION_THROUGH_LOW-RESISTIVITY_CONDUCTIVE_LAYER_simplified_abstract_(Taiwan_Semiconductor_Manufacturing_Co.,_Ltd.)&oldid=61305 (accessed June 28, 2024).

CBE/CSE style

WikiPatents contributors. 18421681. GATE RESISTANCE REDUCTION THROUGH LOW-RESISTIVITY CONDUCTIVE LAYER simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.) [Internet]. WikiPatents, ; 2024 May 24, 07:13 UTC [cited 2024 Jun 28]. Available from: http://wikipatents.org/index.php?title=18421681._GATE_RESISTANCE_REDUCTION_THROUGH_LOW-RESISTIVITY_CONDUCTIVE_LAYER_simplified_abstract_(Taiwan_Semiconductor_Manufacturing_Co.,_Ltd.)&oldid=61305.

Bluebook style

18421681. GATE RESISTANCE REDUCTION THROUGH LOW-RESISTIVITY CONDUCTIVE LAYER simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.), http://wikipatents.org/index.php?title=18421681._GATE_RESISTANCE_REDUCTION_THROUGH_LOW-RESISTIVITY_CONDUCTIVE_LAYER_simplified_abstract_(Taiwan_Semiconductor_Manufacturing_Co.,_Ltd.)&oldid=61305 (last visited June 28, 2024).

BibTeX entry

 @misc{ wiki:xxx,
   author = "WikiPatents",
   title = "18421681. GATE RESISTANCE REDUCTION THROUGH LOW-RESISTIVITY CONDUCTIVE LAYER simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.) --- WikiPatents{,} ",
   year = "2024",
   url = "http://wikipatents.org/index.php?title=18421681._GATE_RESISTANCE_REDUCTION_THROUGH_LOW-RESISTIVITY_CONDUCTIVE_LAYER_simplified_abstract_(Taiwan_Semiconductor_Manufacturing_Co.,_Ltd.)&oldid=61305",
   note = "[Online; accessed 28-June-2024]"
 }

When using the LaTeX package url (\usepackage{url} somewhere in the preamble) which tends to give much more nicely formatted web addresses, the following may be preferred:

 @misc{ wiki:xxx,
   author = "WikiPatents",
   title = "18421681. GATE RESISTANCE REDUCTION THROUGH LOW-RESISTIVITY CONDUCTIVE LAYER simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.) --- WikiPatents{,} ",
   year = "2024",
   url = "\url{http://wikipatents.org/index.php?title=18421681._GATE_RESISTANCE_REDUCTION_THROUGH_LOW-RESISTIVITY_CONDUCTIVE_LAYER_simplified_abstract_(Taiwan_Semiconductor_Manufacturing_Co.,_Ltd.)&oldid=61305}",
   note = "[Online; accessed 28-June-2024]"
 }