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Bibliographic details for 18514010. ANTI-OXIDATION LAYER TO PREVENT DIELECTRIC LOSS FROM PLANARIZATION PROCESS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

Citation styles for 18514010. ANTI-OXIDATION LAYER TO PREVENT DIELECTRIC LOSS FROM PLANARIZATION PROCESS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

APA style

18514010. ANTI-OXIDATION LAYER TO PREVENT DIELECTRIC LOSS FROM PLANARIZATION PROCESS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.). (2024, March 16). WikiPatents, . Retrieved 12:46, June 30, 2024 from http://wikipatents.org/index.php?title=18514010._ANTI-OXIDATION_LAYER_TO_PREVENT_DIELECTRIC_LOSS_FROM_PLANARIZATION_PROCESS_simplified_abstract_(Taiwan_Semiconductor_Manufacturing_Company,_Ltd.)&oldid=37374.

MLA style

"18514010. ANTI-OXIDATION LAYER TO PREVENT DIELECTRIC LOSS FROM PLANARIZATION PROCESS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)." WikiPatents, . 16 Mar 2024, 23:55 UTC. 30 Jun 2024, 12:46 <http://wikipatents.org/index.php?title=18514010._ANTI-OXIDATION_LAYER_TO_PREVENT_DIELECTRIC_LOSS_FROM_PLANARIZATION_PROCESS_simplified_abstract_(Taiwan_Semiconductor_Manufacturing_Company,_Ltd.)&oldid=37374>.

MHRA style

WikiPatents contributors, '18514010. ANTI-OXIDATION LAYER TO PREVENT DIELECTRIC LOSS FROM PLANARIZATION PROCESS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)', WikiPatents, , 16 March 2024, 23:55 UTC, <http://wikipatents.org/index.php?title=18514010._ANTI-OXIDATION_LAYER_TO_PREVENT_DIELECTRIC_LOSS_FROM_PLANARIZATION_PROCESS_simplified_abstract_(Taiwan_Semiconductor_Manufacturing_Company,_Ltd.)&oldid=37374> [accessed 30 June 2024]

Chicago style

WikiPatents contributors, "18514010. ANTI-OXIDATION LAYER TO PREVENT DIELECTRIC LOSS FROM PLANARIZATION PROCESS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)," WikiPatents, , http://wikipatents.org/index.php?title=18514010._ANTI-OXIDATION_LAYER_TO_PREVENT_DIELECTRIC_LOSS_FROM_PLANARIZATION_PROCESS_simplified_abstract_(Taiwan_Semiconductor_Manufacturing_Company,_Ltd.)&oldid=37374 (accessed June 30, 2024).

CBE/CSE style

WikiPatents contributors. 18514010. ANTI-OXIDATION LAYER TO PREVENT DIELECTRIC LOSS FROM PLANARIZATION PROCESS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.) [Internet]. WikiPatents, ; 2024 Mar 16, 23:55 UTC [cited 2024 Jun 30]. Available from: http://wikipatents.org/index.php?title=18514010._ANTI-OXIDATION_LAYER_TO_PREVENT_DIELECTRIC_LOSS_FROM_PLANARIZATION_PROCESS_simplified_abstract_(Taiwan_Semiconductor_Manufacturing_Company,_Ltd.)&oldid=37374.

Bluebook style

18514010. ANTI-OXIDATION LAYER TO PREVENT DIELECTRIC LOSS FROM PLANARIZATION PROCESS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.), http://wikipatents.org/index.php?title=18514010._ANTI-OXIDATION_LAYER_TO_PREVENT_DIELECTRIC_LOSS_FROM_PLANARIZATION_PROCESS_simplified_abstract_(Taiwan_Semiconductor_Manufacturing_Company,_Ltd.)&oldid=37374 (last visited June 30, 2024).

BibTeX entry

 @misc{ wiki:xxx,
   author = "WikiPatents",
   title = "18514010. ANTI-OXIDATION LAYER TO PREVENT DIELECTRIC LOSS FROM PLANARIZATION PROCESS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.) --- WikiPatents{,} ",
   year = "2024",
   url = "http://wikipatents.org/index.php?title=18514010._ANTI-OXIDATION_LAYER_TO_PREVENT_DIELECTRIC_LOSS_FROM_PLANARIZATION_PROCESS_simplified_abstract_(Taiwan_Semiconductor_Manufacturing_Company,_Ltd.)&oldid=37374",
   note = "[Online; accessed 30-June-2024]"
 }

When using the LaTeX package url (\usepackage{url} somewhere in the preamble) which tends to give much more nicely formatted web addresses, the following may be preferred: 

 @misc{ wiki:xxx,
   author = "WikiPatents",
   title = "18514010. ANTI-OXIDATION LAYER TO PREVENT DIELECTRIC LOSS FROM PLANARIZATION PROCESS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.) --- WikiPatents{,} ",
   year = "2024",
   url = "\url{http://wikipatents.org/index.php?title=18514010._ANTI-OXIDATION_LAYER_TO_PREVENT_DIELECTRIC_LOSS_FROM_PLANARIZATION_PROCESS_simplified_abstract_(Taiwan_Semiconductor_Manufacturing_Company,_Ltd.)&oldid=37374}",
   note = "[Online; accessed 30-June-2024]"
 }


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