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Bibliographic details for 18238291. MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND MEMORY ELEMENT BETWEEN CHANNEL REGION AND CONDUCTIVE PLATE simplified abstract (Micron Technology, Inc.)

Citation styles for 18238291. MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND MEMORY ELEMENT BETWEEN CHANNEL REGION AND CONDUCTIVE PLATE simplified abstract (Micron Technology, Inc.)

APA style

18238291. MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND MEMORY ELEMENT BETWEEN CHANNEL REGION AND CONDUCTIVE PLATE simplified abstract (Micron Technology, Inc.). (2024, March 4). WikiPatents, . Retrieved 03:15, June 23, 2024 from http://wikipatents.org/index.php?title=18238291._MEMORY_DEVICE_HAVING_2-TRANSISTOR_VERTICAL_MEMORY_CELL_AND_MEMORY_ELEMENT_BETWEEN_CHANNEL_REGION_AND_CONDUCTIVE_PLATE_simplified_abstract_(Micron_Technology,_Inc.)&oldid=36469.

MLA style

"18238291. MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND MEMORY ELEMENT BETWEEN CHANNEL REGION AND CONDUCTIVE PLATE simplified abstract (Micron Technology, Inc.)." WikiPatents, . 4 Mar 2024, 05:10 UTC. 23 Jun 2024, 03:15 <http://wikipatents.org/index.php?title=18238291._MEMORY_DEVICE_HAVING_2-TRANSISTOR_VERTICAL_MEMORY_CELL_AND_MEMORY_ELEMENT_BETWEEN_CHANNEL_REGION_AND_CONDUCTIVE_PLATE_simplified_abstract_(Micron_Technology,_Inc.)&oldid=36469>.

MHRA style

WikiPatents contributors, '18238291. MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND MEMORY ELEMENT BETWEEN CHANNEL REGION AND CONDUCTIVE PLATE simplified abstract (Micron Technology, Inc.)', WikiPatents, , 4 March 2024, 05:10 UTC, <http://wikipatents.org/index.php?title=18238291._MEMORY_DEVICE_HAVING_2-TRANSISTOR_VERTICAL_MEMORY_CELL_AND_MEMORY_ELEMENT_BETWEEN_CHANNEL_REGION_AND_CONDUCTIVE_PLATE_simplified_abstract_(Micron_Technology,_Inc.)&oldid=36469> [accessed 23 June 2024]

Chicago style

WikiPatents contributors, "18238291. MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND MEMORY ELEMENT BETWEEN CHANNEL REGION AND CONDUCTIVE PLATE simplified abstract (Micron Technology, Inc.)," WikiPatents, , http://wikipatents.org/index.php?title=18238291._MEMORY_DEVICE_HAVING_2-TRANSISTOR_VERTICAL_MEMORY_CELL_AND_MEMORY_ELEMENT_BETWEEN_CHANNEL_REGION_AND_CONDUCTIVE_PLATE_simplified_abstract_(Micron_Technology,_Inc.)&oldid=36469 (accessed June 23, 2024).

CBE/CSE style

WikiPatents contributors. 18238291. MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND MEMORY ELEMENT BETWEEN CHANNEL REGION AND CONDUCTIVE PLATE simplified abstract (Micron Technology, Inc.) [Internet]. WikiPatents, ; 2024 Mar 4, 05:10 UTC [cited 2024 Jun 23]. Available from: http://wikipatents.org/index.php?title=18238291._MEMORY_DEVICE_HAVING_2-TRANSISTOR_VERTICAL_MEMORY_CELL_AND_MEMORY_ELEMENT_BETWEEN_CHANNEL_REGION_AND_CONDUCTIVE_PLATE_simplified_abstract_(Micron_Technology,_Inc.)&oldid=36469.

Bluebook style

18238291. MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND MEMORY ELEMENT BETWEEN CHANNEL REGION AND CONDUCTIVE PLATE simplified abstract (Micron Technology, Inc.), http://wikipatents.org/index.php?title=18238291._MEMORY_DEVICE_HAVING_2-TRANSISTOR_VERTICAL_MEMORY_CELL_AND_MEMORY_ELEMENT_BETWEEN_CHANNEL_REGION_AND_CONDUCTIVE_PLATE_simplified_abstract_(Micron_Technology,_Inc.)&oldid=36469 (last visited June 23, 2024).

BibTeX entry

 @misc{ wiki:xxx,
   author = "WikiPatents",
   title = "18238291. MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND MEMORY ELEMENT BETWEEN CHANNEL REGION AND CONDUCTIVE PLATE simplified abstract (Micron Technology, Inc.) --- WikiPatents{,} ",
   year = "2024",
   url = "http://wikipatents.org/index.php?title=18238291._MEMORY_DEVICE_HAVING_2-TRANSISTOR_VERTICAL_MEMORY_CELL_AND_MEMORY_ELEMENT_BETWEEN_CHANNEL_REGION_AND_CONDUCTIVE_PLATE_simplified_abstract_(Micron_Technology,_Inc.)&oldid=36469",
   note = "[Online; accessed 23-June-2024]"
 }

When using the LaTeX package url (\usepackage{url} somewhere in the preamble) which tends to give much more nicely formatted web addresses, the following may be preferred: 

 @misc{ wiki:xxx,
   author = "WikiPatents",
   title = "18238291. MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND MEMORY ELEMENT BETWEEN CHANNEL REGION AND CONDUCTIVE PLATE simplified abstract (Micron Technology, Inc.) --- WikiPatents{,} ",
   year = "2024",
   url = "\url{http://wikipatents.org/index.php?title=18238291._MEMORY_DEVICE_HAVING_2-TRANSISTOR_VERTICAL_MEMORY_CELL_AND_MEMORY_ELEMENT_BETWEEN_CHANNEL_REGION_AND_CONDUCTIVE_PLATE_simplified_abstract_(Micron_Technology,_Inc.)&oldid=36469}",
   note = "[Online; accessed 23-June-2024]"
 }


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