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Bibliographic details for 18348846. METAL CHALCOGENIDE FILM, MEMORY ELEMENT INCLUDING SAME, AND METHOD FOR MANUFACTURING PHASE-CHANGE HETEROLAYER simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

Citation styles for 18348846. METAL CHALCOGENIDE FILM, MEMORY ELEMENT INCLUDING SAME, AND METHOD FOR MANUFACTURING PHASE-CHANGE HETEROLAYER simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

APA style

18348846. METAL CHALCOGENIDE FILM, MEMORY ELEMENT INCLUDING SAME, AND METHOD FOR MANUFACTURING PHASE-CHANGE HETEROLAYER simplified abstract (SAMSUNG ELECTRONICS CO., LTD.). (2024, February 20). WikiPatents, . Retrieved 19:53, June 23, 2024 from http://wikipatents.org/index.php?title=18348846._METAL_CHALCOGENIDE_FILM,_MEMORY_ELEMENT_INCLUDING_SAME,_AND_METHOD_FOR_MANUFACTURING_PHASE-CHANGE_HETEROLAYER_simplified_abstract_(SAMSUNG_ELECTRONICS_CO.,_LTD.)&oldid=34638.

MLA style

"18348846. METAL CHALCOGENIDE FILM, MEMORY ELEMENT INCLUDING SAME, AND METHOD FOR MANUFACTURING PHASE-CHANGE HETEROLAYER simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)." WikiPatents, . 20 Feb 2024, 05:18 UTC. 23 Jun 2024, 19:53 <http://wikipatents.org/index.php?title=18348846._METAL_CHALCOGENIDE_FILM,_MEMORY_ELEMENT_INCLUDING_SAME,_AND_METHOD_FOR_MANUFACTURING_PHASE-CHANGE_HETEROLAYER_simplified_abstract_(SAMSUNG_ELECTRONICS_CO.,_LTD.)&oldid=34638>.

MHRA style

WikiPatents contributors, '18348846. METAL CHALCOGENIDE FILM, MEMORY ELEMENT INCLUDING SAME, AND METHOD FOR MANUFACTURING PHASE-CHANGE HETEROLAYER simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)', WikiPatents, , 20 February 2024, 05:18 UTC, <http://wikipatents.org/index.php?title=18348846._METAL_CHALCOGENIDE_FILM,_MEMORY_ELEMENT_INCLUDING_SAME,_AND_METHOD_FOR_MANUFACTURING_PHASE-CHANGE_HETEROLAYER_simplified_abstract_(SAMSUNG_ELECTRONICS_CO.,_LTD.)&oldid=34638> [accessed 23 June 2024]

Chicago style

WikiPatents contributors, "18348846. METAL CHALCOGENIDE FILM, MEMORY ELEMENT INCLUDING SAME, AND METHOD FOR MANUFACTURING PHASE-CHANGE HETEROLAYER simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)," WikiPatents, , http://wikipatents.org/index.php?title=18348846._METAL_CHALCOGENIDE_FILM,_MEMORY_ELEMENT_INCLUDING_SAME,_AND_METHOD_FOR_MANUFACTURING_PHASE-CHANGE_HETEROLAYER_simplified_abstract_(SAMSUNG_ELECTRONICS_CO.,_LTD.)&oldid=34638 (accessed June 23, 2024).

CBE/CSE style

WikiPatents contributors. 18348846. METAL CHALCOGENIDE FILM, MEMORY ELEMENT INCLUDING SAME, AND METHOD FOR MANUFACTURING PHASE-CHANGE HETEROLAYER simplified abstract (SAMSUNG ELECTRONICS CO., LTD.) [Internet]. WikiPatents, ; 2024 Feb 20, 05:18 UTC [cited 2024 Jun 23]. Available from: http://wikipatents.org/index.php?title=18348846._METAL_CHALCOGENIDE_FILM,_MEMORY_ELEMENT_INCLUDING_SAME,_AND_METHOD_FOR_MANUFACTURING_PHASE-CHANGE_HETEROLAYER_simplified_abstract_(SAMSUNG_ELECTRONICS_CO.,_LTD.)&oldid=34638.

Bluebook style

18348846. METAL CHALCOGENIDE FILM, MEMORY ELEMENT INCLUDING SAME, AND METHOD FOR MANUFACTURING PHASE-CHANGE HETEROLAYER simplified abstract (SAMSUNG ELECTRONICS CO., LTD.), http://wikipatents.org/index.php?title=18348846._METAL_CHALCOGENIDE_FILM,_MEMORY_ELEMENT_INCLUDING_SAME,_AND_METHOD_FOR_MANUFACTURING_PHASE-CHANGE_HETEROLAYER_simplified_abstract_(SAMSUNG_ELECTRONICS_CO.,_LTD.)&oldid=34638 (last visited June 23, 2024).

BibTeX entry

 @misc{ wiki:xxx,
   author = "WikiPatents",
   title = "18348846. METAL CHALCOGENIDE FILM, MEMORY ELEMENT INCLUDING SAME, AND METHOD FOR MANUFACTURING PHASE-CHANGE HETEROLAYER simplified abstract (SAMSUNG ELECTRONICS CO., LTD.) --- WikiPatents{,} ",
   year = "2024",
   url = "http://wikipatents.org/index.php?title=18348846._METAL_CHALCOGENIDE_FILM,_MEMORY_ELEMENT_INCLUDING_SAME,_AND_METHOD_FOR_MANUFACTURING_PHASE-CHANGE_HETEROLAYER_simplified_abstract_(SAMSUNG_ELECTRONICS_CO.,_LTD.)&oldid=34638",
   note = "[Online; accessed 23-June-2024]"
 }

When using the LaTeX package url (\usepackage{url} somewhere in the preamble) which tends to give much more nicely formatted web addresses, the following may be preferred: 

 @misc{ wiki:xxx,
   author = "WikiPatents",
   title = "18348846. METAL CHALCOGENIDE FILM, MEMORY ELEMENT INCLUDING SAME, AND METHOD FOR MANUFACTURING PHASE-CHANGE HETEROLAYER simplified abstract (SAMSUNG ELECTRONICS CO., LTD.) --- WikiPatents{,} ",
   year = "2024",
   url = "\url{http://wikipatents.org/index.php?title=18348846._METAL_CHALCOGENIDE_FILM,_MEMORY_ELEMENT_INCLUDING_SAME,_AND_METHOD_FOR_MANUFACTURING_PHASE-CHANGE_HETEROLAYER_simplified_abstract_(SAMSUNG_ELECTRONICS_CO.,_LTD.)&oldid=34638}",
   note = "[Online; accessed 23-June-2024]"
 }


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