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Bibliographic details for US Patent Application 18335065. METHOD OF FABRICATING FIN-TYPE FIELD-EFFECT TRANSISTOR DEVICE HAVING SUBSTRATE WITH HEAVY DOPED AND LIGHT DOPED REGIONS simplified abstract

Citation styles for US Patent Application 18335065. METHOD OF FABRICATING FIN-TYPE FIELD-EFFECT TRANSISTOR DEVICE HAVING SUBSTRATE WITH HEAVY DOPED AND LIGHT DOPED REGIONS simplified abstract

APA style

US Patent Application 18335065. METHOD OF FABRICATING FIN-TYPE FIELD-EFFECT TRANSISTOR DEVICE HAVING SUBSTRATE WITH HEAVY DOPED AND LIGHT DOPED REGIONS simplified abstract. (2023, October 18). WikiPatents, . Retrieved 05:48, June 21, 2024 from http://wikipatents.org/index.php?title=US_Patent_Application_18335065._METHOD_OF_FABRICATING_FIN-TYPE_FIELD-EFFECT_TRANSISTOR_DEVICE_HAVING_SUBSTRATE_WITH_HEAVY_DOPED_AND_LIGHT_DOPED_REGIONS_simplified_abstract&oldid=2942.

MLA style

"US Patent Application 18335065. METHOD OF FABRICATING FIN-TYPE FIELD-EFFECT TRANSISTOR DEVICE HAVING SUBSTRATE WITH HEAVY DOPED AND LIGHT DOPED REGIONS simplified abstract." WikiPatents, . 18 Oct 2023, 10:40 UTC. 21 Jun 2024, 05:48 <http://wikipatents.org/index.php?title=US_Patent_Application_18335065._METHOD_OF_FABRICATING_FIN-TYPE_FIELD-EFFECT_TRANSISTOR_DEVICE_HAVING_SUBSTRATE_WITH_HEAVY_DOPED_AND_LIGHT_DOPED_REGIONS_simplified_abstract&oldid=2942>.

MHRA style

WikiPatents contributors, 'US Patent Application 18335065. METHOD OF FABRICATING FIN-TYPE FIELD-EFFECT TRANSISTOR DEVICE HAVING SUBSTRATE WITH HEAVY DOPED AND LIGHT DOPED REGIONS simplified abstract', WikiPatents, , 18 October 2023, 10:40 UTC, <http://wikipatents.org/index.php?title=US_Patent_Application_18335065._METHOD_OF_FABRICATING_FIN-TYPE_FIELD-EFFECT_TRANSISTOR_DEVICE_HAVING_SUBSTRATE_WITH_HEAVY_DOPED_AND_LIGHT_DOPED_REGIONS_simplified_abstract&oldid=2942> [accessed 21 June 2024]

Chicago style

WikiPatents contributors, "US Patent Application 18335065. METHOD OF FABRICATING FIN-TYPE FIELD-EFFECT TRANSISTOR DEVICE HAVING SUBSTRATE WITH HEAVY DOPED AND LIGHT DOPED REGIONS simplified abstract," WikiPatents, , http://wikipatents.org/index.php?title=US_Patent_Application_18335065._METHOD_OF_FABRICATING_FIN-TYPE_FIELD-EFFECT_TRANSISTOR_DEVICE_HAVING_SUBSTRATE_WITH_HEAVY_DOPED_AND_LIGHT_DOPED_REGIONS_simplified_abstract&oldid=2942 (accessed June 21, 2024).

CBE/CSE style

WikiPatents contributors. US Patent Application 18335065. METHOD OF FABRICATING FIN-TYPE FIELD-EFFECT TRANSISTOR DEVICE HAVING SUBSTRATE WITH HEAVY DOPED AND LIGHT DOPED REGIONS simplified abstract [Internet]. WikiPatents, ; 2023 Oct 18, 10:40 UTC [cited 2024 Jun 21]. Available from: http://wikipatents.org/index.php?title=US_Patent_Application_18335065._METHOD_OF_FABRICATING_FIN-TYPE_FIELD-EFFECT_TRANSISTOR_DEVICE_HAVING_SUBSTRATE_WITH_HEAVY_DOPED_AND_LIGHT_DOPED_REGIONS_simplified_abstract&oldid=2942.

Bluebook style

US Patent Application 18335065. METHOD OF FABRICATING FIN-TYPE FIELD-EFFECT TRANSISTOR DEVICE HAVING SUBSTRATE WITH HEAVY DOPED AND LIGHT DOPED REGIONS simplified abstract, http://wikipatents.org/index.php?title=US_Patent_Application_18335065._METHOD_OF_FABRICATING_FIN-TYPE_FIELD-EFFECT_TRANSISTOR_DEVICE_HAVING_SUBSTRATE_WITH_HEAVY_DOPED_AND_LIGHT_DOPED_REGIONS_simplified_abstract&oldid=2942 (last visited June 21, 2024).

BibTeX entry

 @misc{ wiki:xxx,
   author = "WikiPatents",
   title = "US Patent Application 18335065. METHOD OF FABRICATING FIN-TYPE FIELD-EFFECT TRANSISTOR DEVICE HAVING SUBSTRATE WITH HEAVY DOPED AND LIGHT DOPED REGIONS simplified abstract --- WikiPatents{,} ",
   year = "2023",
   url = "http://wikipatents.org/index.php?title=US_Patent_Application_18335065._METHOD_OF_FABRICATING_FIN-TYPE_FIELD-EFFECT_TRANSISTOR_DEVICE_HAVING_SUBSTRATE_WITH_HEAVY_DOPED_AND_LIGHT_DOPED_REGIONS_simplified_abstract&oldid=2942",
   note = "[Online; accessed 21-June-2024]"
 }

When using the LaTeX package url (\usepackage{url} somewhere in the preamble) which tends to give much more nicely formatted web addresses, the following may be preferred: 

 @misc{ wiki:xxx,
   author = "WikiPatents",
   title = "US Patent Application 18335065. METHOD OF FABRICATING FIN-TYPE FIELD-EFFECT TRANSISTOR DEVICE HAVING SUBSTRATE WITH HEAVY DOPED AND LIGHT DOPED REGIONS simplified abstract --- WikiPatents{,} ",
   year = "2023",
   url = "\url{http://wikipatents.org/index.php?title=US_Patent_Application_18335065._METHOD_OF_FABRICATING_FIN-TYPE_FIELD-EFFECT_TRANSISTOR_DEVICE_HAVING_SUBSTRATE_WITH_HEAVY_DOPED_AND_LIGHT_DOPED_REGIONS_simplified_abstract&oldid=2942}",
   note = "[Online; accessed 21-June-2024]"
 }


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