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Bibliographic details for Samsung electronics co., ltd. (20240347617). ELEMENTAL DOPING OF HIGH-K DIELECTRIC OXIDE TO CREATE P-TYPE CONDUCTIVITY IN THIN LAYER CHANNELS VIA SURFACE CHARGE TRANSFER simplified abstract

Citation styles for Samsung electronics co., ltd. (20240347617). ELEMENTAL DOPING OF HIGH-K DIELECTRIC OXIDE TO CREATE P-TYPE CONDUCTIVITY IN THIN LAYER CHANNELS VIA SURFACE CHARGE TRANSFER simplified abstract

APA style

Samsung electronics co., ltd. (20240347617). ELEMENTAL DOPING OF HIGH-K DIELECTRIC OXIDE TO CREATE P-TYPE CONDUCTIVITY IN THIN LAYER CHANNELS VIA SURFACE CHARGE TRANSFER simplified abstract. (2024, October 18). WikiPatents, . Retrieved 10:28, October 22, 2024 from http://wikipatents.org/index.php?title=Samsung_electronics_co.,_ltd._(20240347617)._ELEMENTAL_DOPING_OF_HIGH-K_DIELECTRIC_OXIDE_TO_CREATE_P-TYPE_CONDUCTIVITY_IN_THIN_LAYER_CHANNELS_VIA_SURFACE_CHARGE_TRANSFER_simplified_abstract&oldid=248794.

MLA style

"Samsung electronics co., ltd. (20240347617). ELEMENTAL DOPING OF HIGH-K DIELECTRIC OXIDE TO CREATE P-TYPE CONDUCTIVITY IN THIN LAYER CHANNELS VIA SURFACE CHARGE TRANSFER simplified abstract." WikiPatents, . 18 Oct 2024, 00:43 UTC. 22 Oct 2024, 10:28 <http://wikipatents.org/index.php?title=Samsung_electronics_co.,_ltd._(20240347617)._ELEMENTAL_DOPING_OF_HIGH-K_DIELECTRIC_OXIDE_TO_CREATE_P-TYPE_CONDUCTIVITY_IN_THIN_LAYER_CHANNELS_VIA_SURFACE_CHARGE_TRANSFER_simplified_abstract&oldid=248794>.

MHRA style

WikiPatents contributors, 'Samsung electronics co., ltd. (20240347617). ELEMENTAL DOPING OF HIGH-K DIELECTRIC OXIDE TO CREATE P-TYPE CONDUCTIVITY IN THIN LAYER CHANNELS VIA SURFACE CHARGE TRANSFER simplified abstract', WikiPatents, , 18 October 2024, 00:43 UTC, <http://wikipatents.org/index.php?title=Samsung_electronics_co.,_ltd._(20240347617)._ELEMENTAL_DOPING_OF_HIGH-K_DIELECTRIC_OXIDE_TO_CREATE_P-TYPE_CONDUCTIVITY_IN_THIN_LAYER_CHANNELS_VIA_SURFACE_CHARGE_TRANSFER_simplified_abstract&oldid=248794> [accessed 22 October 2024]

Chicago style

WikiPatents contributors, "Samsung electronics co., ltd. (20240347617). ELEMENTAL DOPING OF HIGH-K DIELECTRIC OXIDE TO CREATE P-TYPE CONDUCTIVITY IN THIN LAYER CHANNELS VIA SURFACE CHARGE TRANSFER simplified abstract," WikiPatents, , http://wikipatents.org/index.php?title=Samsung_electronics_co.,_ltd._(20240347617)._ELEMENTAL_DOPING_OF_HIGH-K_DIELECTRIC_OXIDE_TO_CREATE_P-TYPE_CONDUCTIVITY_IN_THIN_LAYER_CHANNELS_VIA_SURFACE_CHARGE_TRANSFER_simplified_abstract&oldid=248794 (accessed October 22, 2024).

CBE/CSE style

WikiPatents contributors. Samsung electronics co., ltd. (20240347617). ELEMENTAL DOPING OF HIGH-K DIELECTRIC OXIDE TO CREATE P-TYPE CONDUCTIVITY IN THIN LAYER CHANNELS VIA SURFACE CHARGE TRANSFER simplified abstract [Internet]. WikiPatents, ; 2024 Oct 18, 00:43 UTC [cited 2024 Oct 22]. Available from: http://wikipatents.org/index.php?title=Samsung_electronics_co.,_ltd._(20240347617)._ELEMENTAL_DOPING_OF_HIGH-K_DIELECTRIC_OXIDE_TO_CREATE_P-TYPE_CONDUCTIVITY_IN_THIN_LAYER_CHANNELS_VIA_SURFACE_CHARGE_TRANSFER_simplified_abstract&oldid=248794.

Bluebook style

Samsung electronics co., ltd. (20240347617). ELEMENTAL DOPING OF HIGH-K DIELECTRIC OXIDE TO CREATE P-TYPE CONDUCTIVITY IN THIN LAYER CHANNELS VIA SURFACE CHARGE TRANSFER simplified abstract, http://wikipatents.org/index.php?title=Samsung_electronics_co.,_ltd._(20240347617)._ELEMENTAL_DOPING_OF_HIGH-K_DIELECTRIC_OXIDE_TO_CREATE_P-TYPE_CONDUCTIVITY_IN_THIN_LAYER_CHANNELS_VIA_SURFACE_CHARGE_TRANSFER_simplified_abstract&oldid=248794 (last visited October 22, 2024).

BibTeX entry

 @misc{ wiki:xxx,
   author = "WikiPatents",
   title = "Samsung electronics co., ltd. (20240347617). ELEMENTAL DOPING OF HIGH-K DIELECTRIC OXIDE TO CREATE P-TYPE CONDUCTIVITY IN THIN LAYER CHANNELS VIA SURFACE CHARGE TRANSFER simplified abstract --- WikiPatents{,} ",
   year = "2024",
   url = "http://wikipatents.org/index.php?title=Samsung_electronics_co.,_ltd._(20240347617)._ELEMENTAL_DOPING_OF_HIGH-K_DIELECTRIC_OXIDE_TO_CREATE_P-TYPE_CONDUCTIVITY_IN_THIN_LAYER_CHANNELS_VIA_SURFACE_CHARGE_TRANSFER_simplified_abstract&oldid=248794",
   note = "[Online; accessed 22-October-2024]"
 }

When using the LaTeX package url (\usepackage{url} somewhere in the preamble) which tends to give much more nicely formatted web addresses, the following may be preferred: 

 @misc{ wiki:xxx,
   author = "WikiPatents",
   title = "Samsung electronics co., ltd. (20240347617). ELEMENTAL DOPING OF HIGH-K DIELECTRIC OXIDE TO CREATE P-TYPE CONDUCTIVITY IN THIN LAYER CHANNELS VIA SURFACE CHARGE TRANSFER simplified abstract --- WikiPatents{,} ",
   year = "2024",
   url = "\url{http://wikipatents.org/index.php?title=Samsung_electronics_co.,_ltd._(20240347617)._ELEMENTAL_DOPING_OF_HIGH-K_DIELECTRIC_OXIDE_TO_CREATE_P-TYPE_CONDUCTIVITY_IN_THIN_LAYER_CHANNELS_VIA_SURFACE_CHARGE_TRANSFER_simplified_abstract&oldid=248794}",
   note = "[Online; accessed 22-October-2024]"
 }


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