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Bibliographic details for 18098999. FIELD-EFFECT TRANSISTORS FORMED USING A WIDE BANDGAP SEMICONDUCTOR MATERIAL simplified abstract (GlobalFoundries U.S. Inc.)

Citation styles for 18098999. FIELD-EFFECT TRANSISTORS FORMED USING A WIDE BANDGAP SEMICONDUCTOR MATERIAL simplified abstract (GlobalFoundries U.S. Inc.)

APA style

18098999. FIELD-EFFECT TRANSISTORS FORMED USING A WIDE BANDGAP SEMICONDUCTOR MATERIAL simplified abstract (GlobalFoundries U.S. Inc.). (2024, July 26). WikiPatents, . Retrieved 08:24, October 19, 2024 from http://wikipatents.org/index.php?title=18098999._FIELD-EFFECT_TRANSISTORS_FORMED_USING_A_WIDE_BANDGAP_SEMICONDUCTOR_MATERIAL_simplified_abstract_(GlobalFoundries_U.S._Inc.)&oldid=206550.

MLA style

"18098999. FIELD-EFFECT TRANSISTORS FORMED USING A WIDE BANDGAP SEMICONDUCTOR MATERIAL simplified abstract (GlobalFoundries U.S. Inc.)." WikiPatents, . 26 Jul 2024, 05:27 UTC. 19 Oct 2024, 08:24 <http://wikipatents.org/index.php?title=18098999._FIELD-EFFECT_TRANSISTORS_FORMED_USING_A_WIDE_BANDGAP_SEMICONDUCTOR_MATERIAL_simplified_abstract_(GlobalFoundries_U.S._Inc.)&oldid=206550>.

MHRA style

WikiPatents contributors, '18098999. FIELD-EFFECT TRANSISTORS FORMED USING A WIDE BANDGAP SEMICONDUCTOR MATERIAL simplified abstract (GlobalFoundries U.S. Inc.)', WikiPatents, , 26 July 2024, 05:27 UTC, <http://wikipatents.org/index.php?title=18098999._FIELD-EFFECT_TRANSISTORS_FORMED_USING_A_WIDE_BANDGAP_SEMICONDUCTOR_MATERIAL_simplified_abstract_(GlobalFoundries_U.S._Inc.)&oldid=206550> [accessed 19 October 2024]

Chicago style

WikiPatents contributors, "18098999. FIELD-EFFECT TRANSISTORS FORMED USING A WIDE BANDGAP SEMICONDUCTOR MATERIAL simplified abstract (GlobalFoundries U.S. Inc.)," WikiPatents, , http://wikipatents.org/index.php?title=18098999._FIELD-EFFECT_TRANSISTORS_FORMED_USING_A_WIDE_BANDGAP_SEMICONDUCTOR_MATERIAL_simplified_abstract_(GlobalFoundries_U.S._Inc.)&oldid=206550 (accessed October 19, 2024).

CBE/CSE style

WikiPatents contributors. 18098999. FIELD-EFFECT TRANSISTORS FORMED USING A WIDE BANDGAP SEMICONDUCTOR MATERIAL simplified abstract (GlobalFoundries U.S. Inc.) [Internet]. WikiPatents, ; 2024 Jul 26, 05:27 UTC [cited 2024 Oct 19]. Available from: http://wikipatents.org/index.php?title=18098999._FIELD-EFFECT_TRANSISTORS_FORMED_USING_A_WIDE_BANDGAP_SEMICONDUCTOR_MATERIAL_simplified_abstract_(GlobalFoundries_U.S._Inc.)&oldid=206550.

Bluebook style

18098999. FIELD-EFFECT TRANSISTORS FORMED USING A WIDE BANDGAP SEMICONDUCTOR MATERIAL simplified abstract (GlobalFoundries U.S. Inc.), http://wikipatents.org/index.php?title=18098999._FIELD-EFFECT_TRANSISTORS_FORMED_USING_A_WIDE_BANDGAP_SEMICONDUCTOR_MATERIAL_simplified_abstract_(GlobalFoundries_U.S._Inc.)&oldid=206550 (last visited October 19, 2024).

BibTeX entry

 @misc{ wiki:xxx,
   author = "WikiPatents",
   title = "18098999. FIELD-EFFECT TRANSISTORS FORMED USING A WIDE BANDGAP SEMICONDUCTOR MATERIAL simplified abstract (GlobalFoundries U.S. Inc.) --- WikiPatents{,} ",
   year = "2024",
   url = "http://wikipatents.org/index.php?title=18098999._FIELD-EFFECT_TRANSISTORS_FORMED_USING_A_WIDE_BANDGAP_SEMICONDUCTOR_MATERIAL_simplified_abstract_(GlobalFoundries_U.S._Inc.)&oldid=206550",
   note = "[Online; accessed 19-October-2024]"
 }

When using the LaTeX package url (\usepackage{url} somewhere in the preamble) which tends to give much more nicely formatted web addresses, the following may be preferred: 

 @misc{ wiki:xxx,
   author = "WikiPatents",
   title = "18098999. FIELD-EFFECT TRANSISTORS FORMED USING A WIDE BANDGAP SEMICONDUCTOR MATERIAL simplified abstract (GlobalFoundries U.S. Inc.) --- WikiPatents{,} ",
   year = "2024",
   url = "\url{http://wikipatents.org/index.php?title=18098999._FIELD-EFFECT_TRANSISTORS_FORMED_USING_A_WIDE_BANDGAP_SEMICONDUCTOR_MATERIAL_simplified_abstract_(GlobalFoundries_U.S._Inc.)&oldid=206550}",
   note = "[Online; accessed 19-October-2024]"
 }


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