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Bibliographic details for Samsung electronics co., ltd. (20240250180). THIN FILM TRANSISTOR AND VERTICAL NON-VOLATILE MEMORY DEVICE INCLUDING TRANSITION METAL-INDUCED POLYCRYSTALLINE METAL OXIDE CHANNEL LAYER simplified abstract

Citation styles for Samsung electronics co., ltd. (20240250180). THIN FILM TRANSISTOR AND VERTICAL NON-VOLATILE MEMORY DEVICE INCLUDING TRANSITION METAL-INDUCED POLYCRYSTALLINE METAL OXIDE CHANNEL LAYER simplified abstract

APA style

Samsung electronics co., ltd. (20240250180). THIN FILM TRANSISTOR AND VERTICAL NON-VOLATILE MEMORY DEVICE INCLUDING TRANSITION METAL-INDUCED POLYCRYSTALLINE METAL OXIDE CHANNEL LAYER simplified abstract. (2024, July 25). WikiPatents, . Retrieved 15:43, September 16, 2024 from http://wikipatents.org/index.php?title=Samsung_electronics_co.,_ltd._(20240250180)._THIN_FILM_TRANSISTOR_AND_VERTICAL_NON-VOLATILE_MEMORY_DEVICE_INCLUDING_TRANSITION_METAL-INDUCED_POLYCRYSTALLINE_METAL_OXIDE_CHANNEL_LAYER_simplified_abstract&oldid=199718.

MLA style

"Samsung electronics co., ltd. (20240250180). THIN FILM TRANSISTOR AND VERTICAL NON-VOLATILE MEMORY DEVICE INCLUDING TRANSITION METAL-INDUCED POLYCRYSTALLINE METAL OXIDE CHANNEL LAYER simplified abstract." WikiPatents, . 25 Jul 2024, 05:55 UTC. 16 Sep 2024, 15:43 <http://wikipatents.org/index.php?title=Samsung_electronics_co.,_ltd._(20240250180)._THIN_FILM_TRANSISTOR_AND_VERTICAL_NON-VOLATILE_MEMORY_DEVICE_INCLUDING_TRANSITION_METAL-INDUCED_POLYCRYSTALLINE_METAL_OXIDE_CHANNEL_LAYER_simplified_abstract&oldid=199718>.

MHRA style

WikiPatents contributors, 'Samsung electronics co., ltd. (20240250180). THIN FILM TRANSISTOR AND VERTICAL NON-VOLATILE MEMORY DEVICE INCLUDING TRANSITION METAL-INDUCED POLYCRYSTALLINE METAL OXIDE CHANNEL LAYER simplified abstract', WikiPatents, , 25 July 2024, 05:55 UTC, <http://wikipatents.org/index.php?title=Samsung_electronics_co.,_ltd._(20240250180)._THIN_FILM_TRANSISTOR_AND_VERTICAL_NON-VOLATILE_MEMORY_DEVICE_INCLUDING_TRANSITION_METAL-INDUCED_POLYCRYSTALLINE_METAL_OXIDE_CHANNEL_LAYER_simplified_abstract&oldid=199718> [accessed 16 September 2024]

Chicago style

WikiPatents contributors, "Samsung electronics co., ltd. (20240250180). THIN FILM TRANSISTOR AND VERTICAL NON-VOLATILE MEMORY DEVICE INCLUDING TRANSITION METAL-INDUCED POLYCRYSTALLINE METAL OXIDE CHANNEL LAYER simplified abstract," WikiPatents, , http://wikipatents.org/index.php?title=Samsung_electronics_co.,_ltd._(20240250180)._THIN_FILM_TRANSISTOR_AND_VERTICAL_NON-VOLATILE_MEMORY_DEVICE_INCLUDING_TRANSITION_METAL-INDUCED_POLYCRYSTALLINE_METAL_OXIDE_CHANNEL_LAYER_simplified_abstract&oldid=199718 (accessed September 16, 2024).

CBE/CSE style

WikiPatents contributors. Samsung electronics co., ltd. (20240250180). THIN FILM TRANSISTOR AND VERTICAL NON-VOLATILE MEMORY DEVICE INCLUDING TRANSITION METAL-INDUCED POLYCRYSTALLINE METAL OXIDE CHANNEL LAYER simplified abstract [Internet]. WikiPatents, ; 2024 Jul 25, 05:55 UTC [cited 2024 Sep 16]. Available from: http://wikipatents.org/index.php?title=Samsung_electronics_co.,_ltd._(20240250180)._THIN_FILM_TRANSISTOR_AND_VERTICAL_NON-VOLATILE_MEMORY_DEVICE_INCLUDING_TRANSITION_METAL-INDUCED_POLYCRYSTALLINE_METAL_OXIDE_CHANNEL_LAYER_simplified_abstract&oldid=199718.

Bluebook style

Samsung electronics co., ltd. (20240250180). THIN FILM TRANSISTOR AND VERTICAL NON-VOLATILE MEMORY DEVICE INCLUDING TRANSITION METAL-INDUCED POLYCRYSTALLINE METAL OXIDE CHANNEL LAYER simplified abstract, http://wikipatents.org/index.php?title=Samsung_electronics_co.,_ltd._(20240250180)._THIN_FILM_TRANSISTOR_AND_VERTICAL_NON-VOLATILE_MEMORY_DEVICE_INCLUDING_TRANSITION_METAL-INDUCED_POLYCRYSTALLINE_METAL_OXIDE_CHANNEL_LAYER_simplified_abstract&oldid=199718 (last visited September 16, 2024).

BibTeX entry

 @misc{ wiki:xxx,
   author = "WikiPatents",
   title = "Samsung electronics co., ltd. (20240250180). THIN FILM TRANSISTOR AND VERTICAL NON-VOLATILE MEMORY DEVICE INCLUDING TRANSITION METAL-INDUCED POLYCRYSTALLINE METAL OXIDE CHANNEL LAYER simplified abstract --- WikiPatents{,} ",
   year = "2024",
   url = "http://wikipatents.org/index.php?title=Samsung_electronics_co.,_ltd._(20240250180)._THIN_FILM_TRANSISTOR_AND_VERTICAL_NON-VOLATILE_MEMORY_DEVICE_INCLUDING_TRANSITION_METAL-INDUCED_POLYCRYSTALLINE_METAL_OXIDE_CHANNEL_LAYER_simplified_abstract&oldid=199718",
   note = "[Online; accessed 16-September-2024]"
 }

When using the LaTeX package url (\usepackage{url} somewhere in the preamble) which tends to give much more nicely formatted web addresses, the following may be preferred: 

 @misc{ wiki:xxx,
   author = "WikiPatents",
   title = "Samsung electronics co., ltd. (20240250180). THIN FILM TRANSISTOR AND VERTICAL NON-VOLATILE MEMORY DEVICE INCLUDING TRANSITION METAL-INDUCED POLYCRYSTALLINE METAL OXIDE CHANNEL LAYER simplified abstract --- WikiPatents{,} ",
   year = "2024",
   url = "\url{http://wikipatents.org/index.php?title=Samsung_electronics_co.,_ltd._(20240250180)._THIN_FILM_TRANSISTOR_AND_VERTICAL_NON-VOLATILE_MEMORY_DEVICE_INCLUDING_TRANSITION_METAL-INDUCED_POLYCRYSTALLINE_METAL_OXIDE_CHANNEL_LAYER_simplified_abstract&oldid=199718}",
   note = "[Online; accessed 16-September-2024]"
 }


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