Pages that link to "Category:Seungchan Yun of Waterford NY (US)"

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The following pages link to Category:Seungchan Yun of Waterford NY (US):

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• 17547700. INTEGRATED CIRCUIT DEVICES INCLUDING A METAL RESISTOR AND METHODS OF FORMING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.) ‎ (← links)
• 17554483. STACKED TRANSISTORS HAVING AN ISOLATION REGION THEREBETWEEN AND A COMMON GATE ELECTRODE, AND RELATED FABRICATION METHODS simplified abstract (Samsung Electronics Co., Ltd.) ‎ (← links)
• 17536939. MULTI-STACK SEMICONDUCTOR DEVICE WITH ZEBRA NANOSHEET STRUCTURE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.) ‎ (← links)
• 18094597. FIELD-EFFECT TRANSISTOR STRUCTURE INCLUDING PASSIVE DEVICE AND BACK SIDE POWER DISTRIBUTION NETWORK (BSPDN) simplified abstract (SAMSUNG ELECTRONICS CO., LTD.) ‎ (← links)
• 17977575. MULTI-STACK NANOSHEET STRUCTURE INCLUDING SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.) ‎ (← links)
• 18184901. INTEGRATED CIRCUIT DEVICE INCLUDING INTEGRATED INSULATOR AND METHODS OF FABRICATION THE SAME simplified abstract (Samsung Electronics Co., Ltd.) ‎ (← links)
• Samsung electronics co., ltd. (20240096889). INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRANSISTORS AND METHODS OF FORMING THE SAME simplified abstract ‎ (← links)
• Samsung electronics co., ltd. (20240096984). INTEGRATED CIRCUIT DEVICES INCLUDING A BACK SIDE POWER DISTRIBUTION NETWORK STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract ‎ (← links)
• 18173847. INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRANSISTORS AND METHODS OF FORMING THE SAME simplified abstract (Samsung Electronics Co., Ltd.) ‎ (← links)
• 18160341. INTEGRATED CIRCUIT DEVICES INCLUDING A BACK SIDE POWER DISTRIBUTION NETWORK STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Samsung Electronics Co., Ltd.) ‎ (← links)
• Samsung electronics co., ltd. (20240162309). 3DSFET DEVICE INCLUDING SELF-ALIGNED SOURCE/DRAIN CONTACT STRUCTURE WITH SPACER STRUCTURE AT SIDE SURFACE THEREOF simplified abstract ‎ (← links)
• 18135530. 3DSFET DEVICE INCLUDING SELF-ALIGNED SOURCE/DRAIN CONTACT STRUCTURE WITH SPACER STRUCTURE AT SIDE SURFACE THEREOF simplified abstract (Samsung Electronics Co., Ltd.) ‎ (← links)
• Samsung electronics co., ltd. (20240243172). 3D-STACKED TRANSISTOR STRUCTURE WITH BARRIER LAYER BETWEEN UPPER GATE STRUCTURE AND LOWER GATE STRUCTURE simplified abstract ‎ (← links)
• 18195150. 3D-STACKED TRANSISTOR STRUCTURE WITH BARRIER LAYER BETWEEN UPPER GATE STRUCTURE AND LOWER GATE STRUCTURE simplified abstract (Samsung Electronics Co., Ltd.) ‎ (← links)
• 18228231. SEMICONDUCTOR DEVICE INCLUDING 3D-STACKED FIELD-EFFECT TRANSISTORS HAVING ISOLATION STRUCTURE BETWEEN CONTACT PLUGS simplified abstract (Samsung Electronics Co., Ltd.) ‎ (← links)
• Samsung electronics co., ltd. (20240290689). SEMICONDUCTOR DEVICE INCLUDING BACKSIDE CONTACT STRUCTURE simplified abstract ‎ (← links)

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