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Create the page "ION BEAM APPLICATIONS" on this wiki! See also the search results found.
Page title matches
- =DEVICE AND METHOD FOR TUNING A CHARGED PARTICLE BEAM POSITION= [[:Category:ION BEAM APPLICATIONS|ION BEAM APPLICATIONS]]4 KB (664 words) - 10:52, 25 January 2024
Page text matches
- =FOCUSED ION BEAM APPARATUS AND CONTROL METHOD THEREOF= ==FOCUSED ION BEAM APPARATUS AND CONTROL METHOD THEREOF - A simplified explanation of the abst3 KB (395 words) - 05:55, 22 August 2024
- =FOCUSED ION BEAM APPARATUS AND CONTROL METHOD THEREOF= ==FOCUSED ION BEAM APPARATUS AND CONTROL METHOD THEREOF - A simplified explanation of the abst3 KB (423 words) - 09:47, 22 August 2024
- =ION BEAM DEPOSITION APPARATUS AND ION BEAM DEPOSITION METHOD USING THE SAME= ==ION BEAM DEPOSITION APPARATUS AND ION BEAM DEPOSITION METHOD USING THE SAME - A simplified explanation of the abstract2 KB (332 words) - 03:29, 4 March 2024
- =ION SOURCE HEAD AND ION SOURCE HEAD CURVED LINER, DEFLECTOR, OR REPELLER= ==ION SOURCE HEAD AND ION SOURCE HEAD CURVED LINER, DEFLECTOR, OR REPELLER - A simplified explanation4 KB (561 words) - 06:48, 25 July 2024
- =ION SOURCE HEAD AND ION SOURCE HEAD CURVED LINER, DEFLECTOR, OR REPELLER= ==ION SOURCE HEAD AND ION SOURCE HEAD CURVED LINER, DEFLECTOR, OR REPELLER - A simplified explanation4 KB (636 words) - 02:15, 26 July 2024
- ...between the ion sources. Beamline components modify the mass analyzed ion beam. ...s an ion implantation system with a mass analyzing magnet that can analyze ion beams from two different sources.4 KB (614 words) - 09:37, 30 January 2024
- ...RATUS AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE BY USING FOCUSED ION BEAM AND SCANNING ELECTRON MICROSCOPE SUPPORTED BY ELECTRON DIFFRACTION PATTERN= ...RATUS AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE BY USING FOCUSED ION BEAM AND SCANNING ELECTRON MICROSCOPE SUPPORTED BY ELECTRON DIFFRACTION PATTERN4 KB (511 words) - 18:39, 20 June 2024
- =Grid Structures Of Ion Beam Etching (IBE) Systems= ==Grid Structures Of Ion Beam Etching (IBE) Systems - A simplified explanation of the abstract==4 KB (619 words) - 07:13, 6 July 2024
- =Grid Structures Of Ion Beam Etching (IBE) Systems= ==Grid Structures Of Ion Beam Etching (IBE) Systems - A simplified explanation of the abstract==4 KB (614 words) - 16:44, 4 July 2024
- =Ion Beam Focusing= ==Ion Beam Focusing - A simplified explanation of the abstract==3 KB (488 words) - 05:24, 26 July 2024
- =Ion Source For Controlling Decomposition Buildup Using Chlorine Co-Gas= ==Ion Source For Controlling Decomposition Buildup Using Chlorine Co-Gas - A simp4 KB (530 words) - 03:00, 26 July 2024
- =Removable Ion Source Capable Of Axial Or Cross Beam Ionization= ==Removable Ion Source Capable Of Axial Or Cross Beam Ionization - A simplified explanation of the abstract==4 KB (547 words) - 10:28, 19 January 2024
- =Ion Source For Controlling Decomposition Buildup Using Chlorine Co-Gas= ==Ion Source For Controlling Decomposition Buildup Using Chlorine Co-Gas - A simp4 KB (549 words) - 07:32, 25 July 2024
- =ADJUSTABLE SUPPORT FOR ARC CHAMBER OF ION SOURCE= ==ADJUSTABLE SUPPORT FOR ARC CHAMBER OF ION SOURCE - A simplified explanation of the abstract==3 KB (530 words) - 15:20, 22 August 2024
- =SYSTEMS AND METHODS FOR BEAM SHAPING FOR LARGE ASPECT RATIO WITH A SINGLE CYLINDRICAL LENS= ==SYSTEMS AND METHODS FOR BEAM SHAPING FOR LARGE ASPECT RATIO WITH A SINGLE CYLINDRICAL LENS - A simplifie3 KB (506 words) - 06:34, 22 August 2024
- ...am's energy and enhances the efficiency of beam injection from an external ion source. * The radii of closed orbits of the ion beam increase as it is accelerated.4 KB (524 words) - 07:54, 19 September 2024
- =ION BEAM LITHOGRAPHY AND NANOENGINEERING= ==ION BEAM LITHOGRAPHY AND NANOENGINEERING - A simplified explanation of the abstract=4 KB (535 words) - 05:35, 4 July 2024
- =Feedback Control Of High-Vaccum Cold-Ion Sources Using Rydberg Atom Spectroscopy= ==Feedback Control Of High-Vaccum Cold-Ion Sources Using Rydberg Atom Spectroscopy - A simplified explanation of the a4 KB (540 words) - 08:11, 19 September 2024
- ...RATUS AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE BY USING FOCUSED ION BEAM AND SCANNING ELECTRON MICROSCOPE SUPPORTED BY ELECTRON DIFFRACTION PATTERN= ...RATUS AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE BY USING FOCUSED ION BEAM AND SCANNING ELECTRON MICROSCOPE SUPPORTED BY ELECTRON DIFFRACTION PATTERN3 KB (487 words) - 17:09, 21 June 2024
- =ION BEAM LITHOGRAPHY AND NANOENGINEERING= ==ION BEAM LITHOGRAPHY AND NANOENGINEERING - A simplified explanation of the abstract=3 KB (504 words) - 06:55, 5 July 2024