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Create the page "C30B29/20" on this wiki! See also the search results found.

• Category:Joachim Elbeshausen Sestoft
  * [[:Category:CPC_C30B29/605|C30B29/605]] ({Products containing multiple oriented crystallites, e.g. columnar c * [[:Category:CPC_C30B29/40|C30B29/40]] (SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the fo
  5 members (5 subcategories, 0 files) - 01:59, 19 July 2024
• Category:Thomas Kanne Nordqvist
  * [[:Category:CPC_C30B29/605|C30B29/605]] ({Products containing multiple oriented crystallites, e.g. columnar c * [[:Category:CPC_C30B29/40|C30B29/40]] (SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the fo
  5 members (5 subcategories, 0 files) - 01:59, 19 July 2024
• Category:Aske Nørskov Gejl
  * [[:Category:CPC_C30B29/605|C30B29/605]] ({Products containing multiple oriented crystallites, e.g. columnar c * [[:Category:CPC_C30B29/40|C30B29/40]] (SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the fo
  5 members (5 subcategories, 0 files) - 02:00, 19 July 2024
• Category:Dags Olsteins
  * [[:Category:CPC_C30B29/605|C30B29/605]] ({Products containing multiple oriented crystallites, e.g. columnar c * [[:Category:CPC_C30B29/40|C30B29/40]] (SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the fo
  5 members (5 subcategories, 0 files) - 02:00, 19 July 2024
• Category:Mikelis Marnauza
  * [[:Category:CPC_C30B29/605|C30B29/605]] ({Products containing multiple oriented crystallites, e.g. columnar c * [[:Category:CPC_C30B29/40|C30B29/40]] (SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the fo
  5 members (5 subcategories, 0 files) - 01:59, 19 July 2024
• Category:Peter G. Schunemann of Hollis NH (US)
  * [[:Category:CPC_C30B29/42|C30B29/42]] (SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the fo * [[:Category:CPC_C30B29/44|C30B29/44]] (SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the fo
  3 members (3 subcategories, 0 files) - 08:48, 19 July 2024
• Category:Kevin T. Zawilski of Arlington MA (US)
  * [[:Category:CPC_C30B29/42|C30B29/42]] (SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the fo * [[:Category:CPC_C30B29/44|C30B29/44]] (SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the fo
  3 members (3 subcategories, 0 files) - 08:48, 19 July 2024
• Category:Hiroyuki KAMADA
  * [[:Category:CPC_C30B15/20|C30B15/20]] (SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the forma * [[:Category:CPC_C30B29/06|C30B29/06]] (SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the fo
  3 members (3 subcategories, 0 files) - 08:06, 18 July 2024
• Category:Yuta AOKI
  * [[:Category:CPC_C30B29/406|C30B29/406]] (SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the f * [[:Category:CPC_C30B29/38|C30B29/38]] (Nitrides): 1 patents
  5 members (5 subcategories, 0 files) - 02:44, 19 July 2024
• Category:Kiyotaka TAKANO
  * [[:Category:CPC_C30B29/06|C30B29/06]] (SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the fo * [[:Category:CPC_C30B15/20|C30B15/20]] (SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the forma
  4 members (4 subcategories, 0 files) - 08:05, 18 July 2024
• Sumitomo Electric Industries, Ltd. patent applications on September 12th, 2024
  ...] (2), [[:Category:C30B25/18|C30B25/18]] (2), [[:Category:C30B25/20|C30B25/20]] (2) IPC Code(s): C30B25/20, C30B23/00, C30B25/18, C30B29/36
  14 KB (2,070 words) - 04:00, 19 September 2024
• 18623278. n-TYPE GaN CRYSTAL, GaN WAFER, AND GaN CRYSTAL, GaN WAFER AND NITRIDE SEMICONDUCTOR DEVICE PRODUCTION METHOD simplified abstract (Mitsubishi Chemical Corporation)
  ...respect to a (0001) crystal plane. The crystal can also have a diameter of 20 mm or larger. * (004) XRD rocking curve FWHM is less than 20 arcsec.
  4 KB (588 words) - 05:56, 23 August 2024
• Category:Toshihiro KOBAYASHI
  * [[:Category:CPC_C30B29/406|C30B29/406]] (SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the f * [[:Category:CPC_C30B29/38|C30B29/38]] (Nitrides): 1 patents
  5 members (5 subcategories, 0 files) - 02:44, 19 July 2024
• Category:Yuichiro HAYASHI
  * [[:Category:CPC_C30B29/406|C30B29/406]] (SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the f * [[:Category:CPC_C30B29/38|C30B29/38]] (Nitrides): 1 patents
  5 members (5 subcategories, 0 files) - 02:44, 19 July 2024
• Category:Kyung Seok LEE
  * [[:Category:CPC_C30B29/06|C30B29/06]] (SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the fo * [[:Category:CPC_C30B15/20|C30B15/20]] (SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the forma
  5 members (5 subcategories, 0 files) - 01:52, 21 July 2024
• Category:Han Woong JEON
  * [[:Category:CPC_C30B29/06|C30B29/06]] (SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the fo * [[:Category:CPC_C30B15/20|C30B15/20]] (SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the forma
  5 members (5 subcategories, 0 files) - 01:52, 21 July 2024
• Sumitomo electric industries, ltd. (20240301585). SILICON CARBIDE EPITAXIAL SUBSTRATE simplified abstract
  [[Category:C30B25/20]] [[Category:C30B29/36]]
  3 KB (428 words) - 03:59, 19 September 2024
• Category:Keun Ho KIM
  * [[:Category:CPC_C30B29/06|C30B29/06]] (SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the fo * [[:Category:CPC_C30B15/20|C30B15/20]] (SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the forma
  5 members (5 subcategories, 0 files) - 01:52, 21 July 2024
• 18273774. SILICON CARBIDE EPITAXIAL SUBSTRATE simplified abstract (Sumitomo Electric Industries, Ltd.)
  [[Category:C30B25/20]] [[Category:C30B29/36]]
  3 KB (444 words) - 06:47, 19 September 2024
• Category:Young Min LEE
  * [[:Category:CPC_C30B29/06|C30B29/06]] (SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the fo * [[:Category:CPC_C30B15/20|C30B15/20]] (SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the forma
  5 members (5 subcategories, 0 files) - 01:52, 21 July 2024

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