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- 10:02, 19 September 2024 18670123. SEMICONDUCTOR DEVICE HAVING FINS AND METHOD OF FABRICATING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.) (hist) [4,149 bytes] Wikipatents (talk | contribs) (Creating a new page)
- 10:02, 19 September 2024 18670557. SEMICONDUCTOR DEVICE WITH METAL CAP ON GATE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.) (hist) [3,850 bytes] Wikipatents (talk | contribs) (Creating a new page)
- 10:02, 19 September 2024 18673615. FIN FIELD-EFFECT TRANSISTOR DEVICE HAVING HYBRID WORK FUNCTION LAYER STACK simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.) (hist) [3,845 bytes] Wikipatents (talk | contribs) (Creating a new page)
- 10:02, 19 September 2024 18671151. SEMICONDUCTOR STRUCTURE HAVING DIELECTRIC STRUCTURE EXTENDING INTO SECOND CAVITY OF SEMICONDUCTOR FIN simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.) (hist) [4,648 bytes] Wikipatents (talk | contribs) (Creating a new page)
- 10:02, 19 September 2024 18674285. MULTI-GATE DEVICE FABRICATION AND STRUCTURES THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.) (hist) [4,653 bytes] Wikipatents (talk | contribs) (Creating a new page)
- 10:01, 19 September 2024 18669052. AIR GAP IN INNER SPACERS AND METHODS OF FABRICATING THE SAME IN FIELD-EFFECT TRANSISTORS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.) (hist) [4,037 bytes] Wikipatents (talk | contribs) (Creating a new page)
- 10:01, 19 September 2024 18355688. GATE DIELECTRIC LAYERS FOR STACKED MULTI-GATE DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.) (hist) [4,156 bytes] Wikipatents (talk | contribs) (Creating a new page)
- 10:01, 19 September 2024 18182921. METHOD AND DEVICE RELATED TO SEAMLESS METAL CONTACT simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.) (hist) [5,332 bytes] Wikipatents (talk | contribs) (Creating a new page)
- 10:01, 19 September 2024 18669059. ISOLATION STRUCTURE FOR ISOLATING EPITAXIALLY GROWN SOURCE/DRAIN REGIONS AND METHOD OF FABRICATION THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.) (hist) [3,984 bytes] Wikipatents (talk | contribs) (Creating a new page)
- 10:01, 19 September 2024 18674589. INTRODUCING FLUORINE TO GATE AFTER WORK FUNCTION METAL DEPOSITION simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.) (hist) [2,705 bytes] Wikipatents (talk | contribs) (Creating a new page)
- 10:01, 19 September 2024 18669199. EFFECTIVE WORK FUNCTION TUNING VIA SILICIDE INDUCED INTERFACE DIPOLE MODULATION FOR METAL GATES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.) (hist) [4,843 bytes] Wikipatents (talk | contribs) (Creating a new page)
- 10:01, 19 September 2024 18185558. SEMICONDUCTOR DEVICE STRUCTURE WITH CONTACT STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.) (hist) [4,115 bytes] Wikipatents (talk | contribs) (Creating a new page)
- 10:01, 19 September 2024 18183551. GATE STRUCTURES IN SEMICONDUCTOR DEVICES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.) (hist) [3,542 bytes] Wikipatents (talk | contribs) (Creating a new page)
- 10:00, 19 September 2024 18669392. SEMICONDUCTOR DEVICE WITH FERROELECTRIC ALUMINUM NITRIDE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.) (hist) [3,451 bytes] Wikipatents (talk | contribs) (Creating a new page)
- 10:00, 19 September 2024 18674989. SEMICONDUCTOR DEVICES AND METHODS OF FABRICATION THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.) (hist) [3,321 bytes] Wikipatents (talk | contribs) (Creating a new page)
- 10:00, 19 September 2024 18185232. STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH SEMICONDUCTOR NANOSTRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.) (hist) [3,444 bytes] Wikipatents (talk | contribs) (Creating a new page)
- 10:00, 19 September 2024 18183354. SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.) (hist) [3,515 bytes] Wikipatents (talk | contribs) (Creating a new page)
- 10:00, 19 September 2024 18184999. Treatment of Electrodes of MIM Capacitors simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.) (hist) [3,045 bytes] Wikipatents (talk | contribs) (Creating a new page)
- 10:00, 19 September 2024 18184119. Treatment of Electrodes of MIM Capacitors simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.) (hist) [3,857 bytes] Wikipatents (talk | contribs) (Creating a new page)
- 10:00, 19 September 2024 18674904. METHOD FOR FABRICATING HYBRID BONDED STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.) (hist) [4,420 bytes] Wikipatents (talk | contribs) (Creating a new page)
