Samsung electronics co., ltd. (20250147419). RESIST COMPOSITION AND PATTERN FORMATION METHOD USING THE SAME: Difference between revisions
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==Original Abstract Submitted== | ==Original Abstract Submitted== | ||
wherein m, m, lto l, lto l, a11 to a14, a21 to a24, rto r, rto r, b11 to b14, b21 to b24, yto y, and xto xin formulae 1-1 to 1-4 and 2 are as described in the specification. | |||
Latest revision as of 17:06, 14 May 2025
RESIST COMPOSITION AND PATTERN FORMATION METHOD USING THE SAME
Organization Name
Inventor(s)
RESIST COMPOSITION AND PATTERN FORMATION METHOD USING THE SAME
This abstract first appeared for US patent application 20250147419 titled 'RESIST COMPOSITION AND PATTERN FORMATION METHOD USING THE SAME
Original Abstract Submitted
wherein m, m, lto l, lto l, a11 to a14, a21 to a24, rto r, rto r, b11 to b14, b21 to b24, yto y, and xto xin formulae 1-1 to 1-4 and 2 are as described in the specification.
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