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Samsung electronics co., ltd. (20250147419). RESIST COMPOSITION AND PATTERN FORMATION METHOD USING THE SAME: Difference between revisions

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==Original Abstract Submitted==
==Original Abstract Submitted==


wherein m, m, lto l, lto l, a11 to a14, a21 to a24, rto r, rto r, b11 to b14, b21 to b24, yto y, and xto xin formulae 1-1 to 1-4 and 2 are as described in the specification.
provided are a resist composition and a pattern formation method using the same, the resist composition including a first organometallic compound represented by one of formulae 1-1 to 1-4 and a second organometallic compound represented by formula 2:





Revision as of 17:06, 14 May 2025


RESIST COMPOSITION AND PATTERN FORMATION METHOD USING THE SAME

Organization Name

samsung electronics co., ltd.

Inventor(s)

Jungha Chae of Suwon-si KR

Haengdeog Koh of Suwon-si KR

Yoonhyun Kwak of Suwon-si KR

Mijeong Kim of Suwon-si KR

Sunyoung Lee of Suwon-si KR

Jiyoun Lee of Suwon-si KR

Changheon Lee of Suwon-si KR

Jinwon Jeon of Suwon-si KR

RESIST COMPOSITION AND PATTERN FORMATION METHOD USING THE SAME

This abstract first appeared for US patent application 20250147419 titled 'RESIST COMPOSITION AND PATTERN FORMATION METHOD USING THE SAME

Original Abstract Submitted

provided are a resist composition and a pattern formation method using the same, the resist composition including a first organometallic compound represented by one of formulae 1-1 to 1-4 and a second organometallic compound represented by formula 2:

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