Taiwan semiconductor manufacturing company, ltd. (20250130367). WAVEGUIDE PHOTODETECTOR AND METHOD FOR FORMING THE SAME: Difference between revisions
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{"@context":"https://schema.org","@type":"TechArticle","headline":"WAVEGUIDE PHOTODETECTOR AND METHOD FOR FORMING THE SAME","name":"WAVEGUIDE PHOTODETECTOR AND METHOD FOR FORMING THE SAME","description":"a waveguide photodetector includes a slab over a substrate, first and second contact portions protruding upward from the slab, and a ridge protruding upward from the slab between the first and second ...","datePublished":"April 24th, 2025","mainEntity":{"@type":"Patent","identifier":"20250130367","name":"WAVEGUIDE PHOTODETECTOR AND METHOD FOR FORMING THE SAME","abstract":"a waveguide photodetector includes a slab over a substrate, first and second contact portions protruding upward from the slab, and a ridge protruding upward from the slab between the first and second contact portions. a first semiconductor layer is over the substrate and includes a first doped region in the first contact portion, a second doped region in the slab between the first contact portion and the ridge, a third doped region and a sixth doped region in the ridge, a fourth doped region in the second contact portion, a fifth doped region in the slab between the second contact portion and the ridge, a first intrinsic region between the sixth and third doped regions, and a second intrinsic region between the sixth and fifth doped regions. a second semiconductor layer is over the first intrinsic region and between the sixth and third doped regions.","applicationNumber":"20250130367","datePublished":"April 24th, 2025","inventor":[{"@type":"Person","name":"Chih-Tsung Shih"},{"@type":"Person","name":"Chi-Yuan Shih"}],"applicant":{"@type":"Organization","name":"taiwan semiconductor manufacturing company, ltd."},"additionalProperty":[{"@type":"PropertyValue","name":"IPC Classification","value":"G02B6/122"},{"@type":"PropertyValue","name":"IPC Classification","value":"G02B6/12"},{"@type":"PropertyValue","name":"IPC Classification","value":"G02B6/136"},{"@type":"PropertyValue","name":"IPC Classification","value":"H01L31/0232"},{"@type":"PropertyValue","name":"IPC Classification","value":"H01L31/107"},{"@type":"PropertyValue","name":"IPC Classification","value":"H01L31/18"},{"@type":"PropertyValue","name":"CPC Classification","value":"G02B6/122"}]}} | |||
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=WAVEGUIDE PHOTODETECTOR AND METHOD FOR FORMING THE SAME= | =WAVEGUIDE PHOTODETECTOR AND METHOD FOR FORMING THE SAME= | ||
Latest revision as of 15:38, 29 April 2025
WAVEGUIDE PHOTODETECTOR AND METHOD FOR FORMING THE SAME
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Chih-Tsung Shih of Hsinchu City TW
WAVEGUIDE PHOTODETECTOR AND METHOD FOR FORMING THE SAME
This abstract first appeared for US patent application 20250130367 titled 'WAVEGUIDE PHOTODETECTOR AND METHOD FOR FORMING THE SAME
Original Abstract Submitted
a waveguide photodetector includes a slab over a substrate, first and second contact portions protruding upward from the slab, and a ridge protruding upward from the slab between the first and second contact portions. a first semiconductor layer is over the substrate and includes a first doped region in the first contact portion, a second doped region in the slab between the first contact portion and the ridge, a third doped region and a sixth doped region in the ridge, a fourth doped region in the second contact portion, a fifth doped region in the slab between the second contact portion and the ridge, a first intrinsic region between the sixth and third doped regions, and a second intrinsic region between the sixth and fifth doped regions. a second semiconductor layer is over the first intrinsic region and between the sixth and third doped regions.
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