Samsung electronics co., ltd. (20250132257). SEMICONDUCTOR DEVICE: Difference between revisions
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{"@context":"https://schema.org","@type":"TechArticle","headline":"SEMICONDUCTOR DEVICE","name":"SEMICONDUCTOR DEVICE","description":"a semiconductor device may include a via pattern connected to a conductive pattern on a substrate, the via pattern including a lower via pattern and an upper via pattern stacked on the lower via patte...","datePublished":"April 24th, 2025","mainEntity":{"@type":"Patent","identifier":"20250132257","name":"SEMICONDUCTOR DEVICE","abstract":"a semiconductor device may include a via pattern connected to a conductive pattern on a substrate, the via pattern including a lower via pattern and an upper via pattern stacked on the lower via pattern, and a wiring line connected to the upper via pattern and extending in a second direction. the wiring line may include a same metal as the upper via pattern. a bottom width of the wiring line may be greater than a top width of the wiring line. a widths of an upper face of the lower via pattern may be equal to width of the bottom face of the upper via pattern.","applicationNumber":"20250132257","datePublished":"April 24th, 2025","inventor":[{"@type":"Person","name":"Hyo Jin KIM"},{"@type":"Person","name":"Dong Hoon HWANG"},{"@type":"Person","name":"Min Chan GWAK"}],"applicant":{"@type":"Organization","name":"samsung electronics co., ltd."},"additionalProperty":[{"@type":"PropertyValue","name":"IPC Classification","value":"H01L23/535"},{"@type":"PropertyValue","name":"IPC Classification","value":"H01L23/528"},{"@type":"PropertyValue","name":"IPC Classification","value":"H01L23/532"},{"@type":"PropertyValue","name":"IPC Classification","value":"H01L29/06"},{"@type":"PropertyValue","name":"IPC Classification","value":"H01L29/417"},{"@type":"PropertyValue","name":"IPC Classification","value":"H01L29/423"},{"@type":"PropertyValue","name":"IPC Classification","value":"H01L29/775"},{"@type":"PropertyValue","name":"CPC Classification","value":"H01L23/535"}]}} | |||
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=SEMICONDUCTOR DEVICE= | =SEMICONDUCTOR DEVICE= | ||
Latest revision as of 15:26, 29 April 2025
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Dong Hoon Hwang of Suwon-si KR
SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 20250132257 titled 'SEMICONDUCTOR DEVICE
Original Abstract Submitted
a semiconductor device may include a via pattern connected to a conductive pattern on a substrate, the via pattern including a lower via pattern and an upper via pattern stacked on the lower via pattern, and a wiring line connected to the upper via pattern and extending in a second direction. the wiring line may include a same metal as the upper via pattern. a bottom width of the wiring line may be greater than a top width of the wiring line. a widths of an upper face of the lower via pattern may be equal to width of the bottom face of the upper via pattern.