Samsung electronics co., ltd. (20250015157). SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Organization Name

samsung electronics co., ltd.

Inventor(s)

Beomjin Park of Suwon-si KR

Myung Gil Kang of Suwon-si KR

Dongwon Kim of Suwon-si KR

Younggwon Kim of Suwon-si KR

Jongsu Kim of Suwon-si KR

Hyumin Yoo of Suwon-si KR

Soojin Jeong of Suwon-si KR

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

This abstract first appeared for US patent application 20250015157 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Original Abstract Submitted

the present disclosure relates to semiconductor devices and their fabrication methods. an example semiconductor device comprises a substrate including an active pattern, a channel pattern including semiconductor patterns, a source/drain pattern connected to the semiconductor patterns, an inner gate electrode between two neighboring semiconductor patterns, an inner gate dielectric layer, and an inner high-k dielectric layer between the inner gate electrode and the inner gate dielectric layer. the inner gate dielectric layer includes an upper dielectric layer, a lower dielectric layer, and an inner spacer. a first thickness of the inner spacer is greater than a second thickness of the upper or lower dielectric layer. the first thickness is greater than a third thickness of the inner high-k dielectric layer.