Micron technology, inc. (20250006281). PROGRAM CONTINUATION STRATEGIES AFTER MEMORY DEVICE POWER LOSS

PROGRAM CONTINUATION STRATEGIES AFTER MEMORY DEVICE POWER LOSS

Organization Name

micron technology, inc.

Inventor(s)

Gary F. Besinga of Boise ID US

Vamsi Pavan Rayaprolu of Santa Clara CA US

Steven Michael Kientz of Westminster CO US

Renato C. Padilla of Folsom CA US

PROGRAM CONTINUATION STRATEGIES AFTER MEMORY DEVICE POWER LOSS

This abstract first appeared for US patent application 20250006281 titled 'PROGRAM CONTINUATION STRATEGIES AFTER MEMORY DEVICE POWER LOSS

Original Abstract Submitted

a system includes a memory device and a processing device, operatively coupled with the memory device, to perform operations including identifying an open block of the memory device, determining, based on at least one charge loss metric associated with a set of programmed pages of the open block or at least one charge gain metric associated with a set of erased pages of the open block, whether the open block is valid for programming, and responsive to determining that the open block is not valid for programming, abandoning the open block.