Taiwan semiconductor manufacturing company, ltd. (20250062204). INTEGRATED CIRCUIT PACKAGE AND METHOD: Difference between revisions
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[[Category:taiwan semiconductor manufacturing company, ltd.]] | [[Category:taiwan semiconductor manufacturing company, ltd.]] | ||
==Inventor(s)== | |||
[[:Category:Yan-Zuo Tsai of Hsinchu (TW)|Yan-Zuo Tsai of Hsinchu (TW)]][[Category:Yan-Zuo Tsai of Hsinchu (TW)]] | |||
[[:Category:Ming-Tsu Chung of Hsinchu (TW)|Ming-Tsu Chung of Hsinchu (TW)]][[Category:Ming-Tsu Chung of Hsinchu (TW)]] | |||
[[:Category:Yang-Chih Hsueh of Hsinchu (TW)|Yang-Chih Hsueh of Hsinchu (TW)]][[Category:Yang-Chih Hsueh of Hsinchu (TW)]] | |||
[[:Category:Yung-Chi Lin of Su-Lin (TW)|Yung-Chi Lin of Su-Lin (TW)]][[Category:Yung-Chi Lin of Su-Lin (TW)]] | |||
==INTEGRATED CIRCUIT PACKAGE AND METHOD== | |||
This abstract first appeared for US patent application 20250062204 titled 'INTEGRATED CIRCUIT PACKAGE AND METHOD | |||
==Original Abstract Submitted== | |||
a package includes a first die over and bonded to a first side of a second die, where the second die includes a first substrate, a first interconnect structure over the first substrate, a seal ring disposed within the first interconnect structure, first dummy through substrate vias (tsvs) extending through edge regions of the first substrate of the second die and in physical contact with the seal ring, and functional tsvs extending through a central region of the first substrate of the second die. | |||
[[Category:H01L23/498]] | |||
[[Category:H01L21/48]] | |||
[[Category:H01L21/768]] | |||
[[Category:H01L23/16]] | |||
[[Category:H01L23/528]] | |||
[[Category:CPC_H01L23/49827]] | |||
Latest revision as of 04:25, 19 March 2025
INTEGRATED CIRCUIT PACKAGE AND METHOD
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Ming-Tsu Chung of Hsinchu (TW)
Yang-Chih Hsueh of Hsinchu (TW)
INTEGRATED CIRCUIT PACKAGE AND METHOD
This abstract first appeared for US patent application 20250062204 titled 'INTEGRATED CIRCUIT PACKAGE AND METHOD
Original Abstract Submitted
a package includes a first die over and bonded to a first side of a second die, where the second die includes a first substrate, a first interconnect structure over the first substrate, a seal ring disposed within the first interconnect structure, first dummy through substrate vias (tsvs) extending through edge regions of the first substrate of the second die and in physical contact with the seal ring, and functional tsvs extending through a central region of the first substrate of the second die.