Samsung electronics co., ltd. (20250072053). SEMICONDUCTOR DEVICES: Difference between revisions
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[[Category:samsung electronics co., ltd.]] | [[Category:samsung electronics co., ltd.]] | ||
==Inventor(s)== | |||
[[:Category:MYUNG GIL Kang of Suwon-si (KR)|MYUNG GIL Kang of Suwon-si (KR)]][[Category:MYUNG GIL Kang of Suwon-si (KR)]] | |||
[[:Category:DONG WON Kim of Seongnam-si (KR)|DONG WON Kim of Seongnam-si (KR)]][[Category:DONG WON Kim of Seongnam-si (KR)]] | |||
[[:Category:WOO SEOK Park of Ansan-si (KR)|WOO SEOK Park of Ansan-si (KR)]][[Category:WOO SEOK Park of Ansan-si (KR)]] | |||
[[:Category:KEUN HWI Cho of Seoul (KR)|KEUN HWI Cho of Seoul (KR)]][[Category:KEUN HWI Cho of Seoul (KR)]] | |||
[[:Category:SUNG GI Hur of Hwaseong-si (KR)|SUNG GI Hur of Hwaseong-si (KR)]][[Category:SUNG GI Hur of Hwaseong-si (KR)]] | |||
==SEMICONDUCTOR DEVICES== | |||
This abstract first appeared for US patent application 20250072053 titled 'SEMICONDUCTOR DEVICES | |||
==Original Abstract Submitted== | |||
semiconductor devices include a first active pattern including a first lower pattern extending in a first direction and a first sheet pattern spaced apart from the first lower pattern; and a first gate electrode on the first lower pattern, the first gate electrode extending in a second direction and surrounding the first sheet pattern, wherein the first lower pattern includes a first sidewall and a second sidewall opposite to each other, each of the first sidewall of the first lower pattern and the second sidewall of the first lower pattern extends in the first direction, the first gate electrode overlaps the first sidewall of the first lower pattern in the second direction by a first depth, the first gate electrode overlaps the second sidewall of the first lower pattern in the second direction by a second depth, and the first depth is different from the second depth. | |||
[[Category:H01L29/423]] | |||
[[Category:H01L27/092]] | |||
[[Category:H01L29/06]] | |||
[[Category:H01L29/786]] | |||
[[Category:CPC_H01L29/42392]] |
Latest revision as of 07:04, 17 March 2025
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
MYUNG GIL Kang of Suwon-si (KR)
DONG WON Kim of Seongnam-si (KR)
WOO SEOK Park of Ansan-si (KR)
SUNG GI Hur of Hwaseong-si (KR)
SEMICONDUCTOR DEVICES
This abstract first appeared for US patent application 20250072053 titled 'SEMICONDUCTOR DEVICES
Original Abstract Submitted
semiconductor devices include a first active pattern including a first lower pattern extending in a first direction and a first sheet pattern spaced apart from the first lower pattern; and a first gate electrode on the first lower pattern, the first gate electrode extending in a second direction and surrounding the first sheet pattern, wherein the first lower pattern includes a first sidewall and a second sidewall opposite to each other, each of the first sidewall of the first lower pattern and the second sidewall of the first lower pattern extends in the first direction, the first gate electrode overlaps the first sidewall of the first lower pattern in the second direction by a first depth, the first gate electrode overlaps the second sidewall of the first lower pattern in the second direction by a second depth, and the first depth is different from the second depth.
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