Samsung electronics co., ltd. (20250071994). SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICES

Organization Name

samsung electronics co., ltd.

Inventor(s)

Kohji Kanamori of Suwon-si (KR)

Seogoo Kang of Suwon-si (KR)

Kyungdong Kim of Suwon-si (KR)

Seunghyun Lee of Suwon-si (KR)

Junghoon Jun of Suwon-si (KR)

Jeehoon Han of Suwon-si (KR)

Taeyoon Hong of Suwon-si (KR)

SEMICONDUCTOR DEVICES

This abstract first appeared for US patent application 20250071994 titled 'SEMICONDUCTOR DEVICES

Original Abstract Submitted

a semiconductor device includes a gate electrode structure, a memory channel structure, and a first contact plug. the gate electrode structure is disposed on a substrate, and includes gate electrodes spaced apart from each other in a first direction substantially perpendicular to an upper surface of the substrate. each of the gate electrode extends in a second direction substantially parallel to the upper surface of the substrate. the memory channel structure extends through the gate electrode structure on the substrate. the first contact plug extends in the first direction on the substrate through and contacting a corresponding one of the gate electrodes, and a portion of a sidewall of the first contact plug at substantially the same level as the corresponding one of the gate electrodes is not surrounded by the corresponding one of the gate electrodes.