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Samsung electronics co., ltd. (20250078929). SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME: Difference between revisions

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[[Category:samsung electronics co., ltd.]]
[[Category:samsung electronics co., ltd.]]
==Inventor(s)==
[[:Category:Kibong Moon of Suwon-si (KR)|Kibong Moon of Suwon-si (KR)]][[Category:Kibong Moon of Suwon-si (KR)]]
[[:Category:Suck-Soo Kim of Suwon-si (KR)|Suck-Soo Kim of Suwon-si (KR)]][[Category:Suck-Soo Kim of Suwon-si (KR)]]
[[:Category:Tae Hun Kim of Suwon-si (KR)|Tae Hun Kim of Suwon-si (KR)]][[Category:Tae Hun Kim of Suwon-si (KR)]]
[[:Category:Hyoje Bang of Suwon-si (KR)|Hyoje Bang of Suwon-si (KR)]][[Category:Hyoje Bang of Suwon-si (KR)]]
[[:Category:Seung Jae Baik of Suwon-si (KR)|Seung Jae Baik of Suwon-si (KR)]][[Category:Seung Jae Baik of Suwon-si (KR)]]
[[:Category:Sung-Bok Lee of Suwon-si (KR)|Sung-Bok Lee of Suwon-si (KR)]][[Category:Sung-Bok Lee of Suwon-si (KR)]]
[[:Category:Jaeduk Lee of Suwon-si (KR)|Jaeduk Lee of Suwon-si (KR)]][[Category:Jaeduk Lee of Suwon-si (KR)]]
[[:Category:Junhee Lim of Suwon-si (KR)|Junhee Lim of Suwon-si (KR)]][[Category:Junhee Lim of Suwon-si (KR)]]
==SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME==
This abstract first appeared for US patent application 20250078929 titled 'SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
==Original Abstract Submitted==
a semiconductor device may include a substrate, a plurality of cell strings perpendicular to an upper surface of the substrate, and a bit line connected to at least six of the cell strings. each of the cell strings may include a plurality of memory cells connected in series to each other in a direction perpendicular to the upper surface of the substrate, first to fourth ground selection transistors connected in series to each other between the plurality of memory cells and the substrate, and a string selection transistor between the plurality of memory cells and the bit line. a first one of the first to fourth selection ground selection transistors may have a first threshold voltage distribution, and a second one of the first to fourth ground selection transistors may have a second threshold voltage distribution. the second threshold voltage distribution may be different from the first threshold voltage distribution.
[[Category:G11C16/04]]
[[Category:G11C5/06]]
[[Category:H01L25/065]]
[[Category:H10B41/10]]
[[Category:H10B41/27]]
[[Category:H10B41/35]]
[[Category:H10B41/41]]
[[Category:H10B43/10]]
[[Category:H10B43/27]]
[[Category:H10B43/35]]
[[Category:H10B43/40]]
[[Category:H10B80/00]]
[[Category:CPC_G11C16/0483]]

Latest revision as of 02:09, 17 March 2025

SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME

Organization Name

samsung electronics co., ltd.

Inventor(s)

Kibong Moon of Suwon-si (KR)

Suck-Soo Kim of Suwon-si (KR)

Tae Hun Kim of Suwon-si (KR)

Hyoje Bang of Suwon-si (KR)

Seung Jae Baik of Suwon-si (KR)

Sung-Bok Lee of Suwon-si (KR)

Jaeduk Lee of Suwon-si (KR)

Junhee Lim of Suwon-si (KR)

SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME

This abstract first appeared for US patent application 20250078929 titled 'SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME

Original Abstract Submitted

a semiconductor device may include a substrate, a plurality of cell strings perpendicular to an upper surface of the substrate, and a bit line connected to at least six of the cell strings. each of the cell strings may include a plurality of memory cells connected in series to each other in a direction perpendicular to the upper surface of the substrate, first to fourth ground selection transistors connected in series to each other between the plurality of memory cells and the substrate, and a string selection transistor between the plurality of memory cells and the bit line. a first one of the first to fourth selection ground selection transistors may have a first threshold voltage distribution, and a second one of the first to fourth ground selection transistors may have a second threshold voltage distribution. the second threshold voltage distribution may be different from the first threshold voltage distribution.

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