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Snap inc. (20250089429). LED ARRAYS WITH DBR: Difference between revisions

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[[Category:snap inc.]]
[[Category:snap inc.]]
==Inventor(s)==
[[:Category:Tao Wang of Sheffield (GB)|Tao Wang of Sheffield (GB)]][[Category:Tao Wang of Sheffield (GB)]]
==LED ARRAYS WITH DBR==
This abstract first appeared for US patent application 20250089429 titled 'LED ARRAYS WITH DBR
==Original Abstract Submitted==
a method of producing a light emitting diode (led) array comprises: forming a plurality of layers of semiconductor material; forming a dielectric mask layer over the plurality of layers, the dielectric mask layer having an array of holes through it each exposing an area of one of the layers of semiconductor material, and growing an led structure in each of the holes arranged to emit light over a range of wavelengths. at least some of the plurality layers form a distributed bragg reflector (dbr) arranged to reflect light of at least some of said range of wavelengths.
[[Category:H01L27/15]]
[[Category:H01L33/00]]
[[Category:H01L33/08]]
[[Category:H01L33/32]]
[[Category:H01L33/60]]
[[Category:CPC_H10H29/142]]

Latest revision as of 02:20, 15 March 2025

LED ARRAYS WITH DBR

Organization Name

snap inc.

Inventor(s)

Tao Wang of Sheffield (GB)

LED ARRAYS WITH DBR

This abstract first appeared for US patent application 20250089429 titled 'LED ARRAYS WITH DBR

Original Abstract Submitted

a method of producing a light emitting diode (led) array comprises: forming a plurality of layers of semiconductor material; forming a dielectric mask layer over the plurality of layers, the dielectric mask layer having an array of holes through it each exposing an area of one of the layers of semiconductor material, and growing an led structure in each of the holes arranged to emit light over a range of wavelengths. at least some of the plurality layers form a distributed bragg reflector (dbr) arranged to reflect light of at least some of said range of wavelengths.

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