Difference between revisions of "Category:Sai-Hooi Yeong"

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=== Executive Summary ===
 
=== Executive Summary ===
Sai-Hooi Yeong is an inventor who has filed 10 patents. Their primary areas of innovation include SEMICONDUCTOR DEVICES NOT COVERED BY CLASS (4 patents), {using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate} (4 patents), SEMICONDUCTOR DEVICES NOT COVERED BY CLASS (3 patents), and they have worked with companies such as Taiwan Semiconductor Manufacturing Co., Ltd. (10 patents). Their most frequent collaborators include [[Category:Chi On Chui|Chi On Chui]] (5 collaborations), [[Category:Meng-Han Lin|Meng-Han Lin]] (4 collaborations), [[Category:Kai-Hsuan Lee|Kai-Hsuan Lee]] (3 collaborations).
+
Sai-Hooi Yeong is an inventor who has filed 13 patents. Their primary areas of innovation include ELECTRONIC MEMORY DEVICES (6 patents), SEMICONDUCTOR DEVICES NOT COVERED BY CLASS (4 patents), SEMICONDUCTOR DEVICES NOT COVERED BY CLASS (4 patents), and they have worked with companies such as Taiwan Semiconductor Manufacturing Company, Ltd. (13 patents). Their most frequent collaborators include [[Category:Yu-Ming Lin|Yu-Ming Lin]] (8 collaborations), [[Category:Bo-Feng Young|Bo-Feng Young]] (4 collaborations), [[Category:Han-Jong Chia|Han-Jong Chia]] (4 collaborations).
  
 
=== Patent Filing Activity ===
 
=== Patent Filing Activity ===
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==== List of Technology Areas ====
 
==== List of Technology Areas ====
* [[:Category:CPC_H01L29/0847|H01L29/0847]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 4 patents
+
* [[:Category:CPC_H10B51/30|H10B51/30]] (ELECTRONIC MEMORY DEVICES): 6 patents
* [[:Category:CPC_H01L29/66545|H01L29/66545]] ({using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate}): 4 patents
+
* [[:Category:CPC_H01L29/7869|H01L29/7869]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 4 patents
* [[:Category:CPC_H01L29/6684|H01L29/6684]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 3 patents
+
* [[:Category:CPC_H01L27/1159|H01L27/1159]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 4 patents
* [[:Category:CPC_H01L29/78391|H01L29/78391]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 3 patents
+
* [[:Category:CPC_H10B51/20|H10B51/20]] (ELECTRONIC MEMORY DEVICES): 4 patents
 +
* [[:Category:CPC_H01L29/78391|H01L29/78391]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 4 patents
 +
* [[:Category:CPC_H01L23/5226|H01L23/5226]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 3 patents
 +
* [[:Category:CPC_H10B51/10|H10B51/10]] (ELECTRONIC MEMORY DEVICES): 3 patents
 +
* [[:Category:CPC_H01L29/66742|H01L29/66742]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 2 patents
 +
* [[:Category:CPC_H01L21/02565|H01L21/02565]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 2 patents
 +
* [[:Category:CPC_H01L29/24|H01L29/24]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 2 patents
 +
* [[:Category:CPC_H01L29/40111|H01L29/40111]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 2 patents
 +
* [[:Category:CPC_H01L29/6684|H01L29/6684]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 2 patents
 +
* [[:Category:CPC_H01L29/78696|H01L29/78696]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 2 patents
 +
* [[:Category:CPC_H01L29/66969|H01L29/66969]] ({of devices having semiconductor bodies not comprising group 14 or group 13/15 materials  (comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide): 2 patents
 
* [[:Category:CPC_H01L29/516|H01L29/516]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 2 patents
 
* [[:Category:CPC_H01L29/516|H01L29/516]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 2 patents
* [[:Category:CPC_H01L29/78696|H01L29/78696]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 2 patents
+
* [[:Category:CPC_H10B53/40|H10B53/40]] (ELECTRONIC MEMORY DEVICES): 1 patents
* [[:Category:CPC_H01L29/66742|H01L29/66742]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 2 patents
+
* [[:Category:CPC_H01L21/383|H01L21/383]] (Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions): 1 patents
* [[:Category:CPC_H01L21/823864|H01L21/823864]] (to produce devices, e.g. integrated circuits, each consisting of a plurality of components): 2 patents
+
* [[:Category:CPC_H01L21/425|H01L21/425]] (producing ion implantation): 1 patents
* [[:Category:CPC_H01L21/823871|H01L21/823871]] (to produce devices, e.g. integrated circuits, each consisting of a plurality of components): 2 patents
+
* [[:Category:CPC_H01L21/477|H01L21/477]] (Organic layers, e.g. photoresist (): 1 patents
* [[:Category:CPC_H01L29/6656|H01L29/6656]] ({using self aligned silicidation, i.e. salicide  (formation of conductive layers comprising silicides): 2 patents
+
* [[:Category:CPC_H01L27/11597|H01L27/11597]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
* [[:Category:CPC_H01L29/165|H01L29/165]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 2 patents
+
* [[:Category:CPC_H01L27/11587|H01L27/11587]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
* [[:Category:CPC_H01L21/30604|H01L21/30604]] (Chemical or electrical treatment, e.g. electrolytic etching  (to form insulating layers): 2 patents
+
* [[:Category:CPC_H01L29/0673|H01L29/0673]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
* [[:Category:CPC_H01L21/823821|H01L21/823821]] (to produce devices, e.g. integrated circuits, each consisting of a plurality of components): 2 patents
 
* [[:Category:CPC_H01L27/0924|H01L27/0924]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 2 patents
 
* [[:Category:CPC_H01L29/66636|H01L29/66636]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 2 patents
 
* [[:Category:CPC_H01L21/823814|H01L21/823814]] (to produce devices, e.g. integrated circuits, each consisting of a plurality of components): 2 patents
 
* [[:Category:CPC_H01L27/092|H01L27/092]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 2 patents
 
* [[:Category:CPC_H01L29/66553|H01L29/66553]] ({using self aligned silicidation, i.e. salicide  (formation of conductive layers comprising silicides): 2 patents
 
* [[:Category:CPC_H01L21/823857|H01L21/823857]] (to produce devices, e.g. integrated circuits, each consisting of a plurality of components): 2 patents
 
* [[:Category:CPC_H01L29/513|H01L29/513]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 2 patents
 
* [[:Category:CPC_H10B51/20|H10B51/20]] (ELECTRONIC MEMORY DEVICES): 1 patents
 
* [[:Category:CPC_H01L23/5283|H01L23/5283]] ({Geometry or} layout of the interconnection structure {(): 1 patents
 
* [[:Category:CPC_H10B51/30|H10B51/30]] (ELECTRONIC MEMORY DEVICES): 1 patents
 
* [[:Category:CPC_H01L29/7869|H01L29/7869]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
 
* [[:Category:CPC_H01L29/0649|H01L29/0649]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
 
* [[:Category:CPC_H01L21/764|H01L21/764]] (Making of isolation regions between components): 1 patents
 
* [[:Category:CPC_H01L21/7682|H01L21/7682]] (Applying interconnections to be used for carrying current between separate components within a device {comprising conductors and dielectrics}): 1 patents
 
* [[:Category:CPC_H01L21/76841|H01L21/76841]] (Applying interconnections to be used for carrying current between separate components within a device {comprising conductors and dielectrics}): 1 patents
 
* [[:Category:CPC_H01L21/76897|H01L21/76897]] ({Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step (self-aligned silicidation on field effect transistors): 1 patents
 
* [[:Category:CPC_H01L23/10|H01L23/10]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
 
* [[:Category:CPC_H01L29/6681|H01L29/6681]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
 
* [[:Category:CPC_H01L29/66803|H01L29/66803]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
 
* [[:Category:CPC_H01L21/225|H01L21/225]] (using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer {(): 1 patents
 
* [[:Category:CPC_H01L21/26526|H01L21/26526]] (producing ion implantation): 1 patents
 
* [[:Category:CPC_H01L29/66818|H01L29/66818]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
 
* [[:Category:CPC_H10B10/12|H10B10/12]] (ELECTRONIC MEMORY DEVICES): 1 patents
 
* [[:Category:CPC_H01L21/0273|H01L21/0273]] ({characterised by the treatment of photoresist layers}): 1 patents
 
* [[:Category:CPC_H01L21/31111|H01L21/31111]] ({by chemical means}): 1 patents
 
* [[:Category:CPC_H01L21/31144|H01L21/31144]] ({using masks}): 1 patents
 
* [[:Category:CPC_H01L21/823418|H01L21/823418]] (to produce devices, e.g. integrated circuits, each consisting of a plurality of components): 1 patents
 
* [[:Category:CPC_H01L21/823431|H01L21/823431]] (to produce devices, e.g. integrated circuits, each consisting of a plurality of components): 1 patents
 
* [[:Category:CPC_H01L21/823437|H01L21/823437]] (to produce devices, e.g. integrated circuits, each consisting of a plurality of components): 1 patents
 
* [[:Category:CPC_H10B10/18|H10B10/18]] (ELECTRONIC MEMORY DEVICES): 1 patents
 
* [[:Category:CPC_G11C8/08|G11C8/08]] (Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines): 1 patents
 
* [[:Category:CPC_G11C29/025|G11C29/025]] (STATIC STORES  (semiconductor memory devices): 1 patents
 
* [[:Category:CPC_G11C29/12|G11C29/12]] (STATIC STORES  (semiconductor memory devices): 1 patents
 
* [[:Category:CPC_G11C29/50|G11C29/50]] (STATIC STORES  (semiconductor memory devices): 1 patents
 
* [[:Category:CPC_H01L21/8221|H01L21/8221]] ({Three dimensional integrated circuits stacked in different levels}): 1 patents
 
* [[:Category:CPC_G11C2029/1202|G11C2029/1202]] (STATIC STORES  (semiconductor memory devices): 1 patents
 
 
* [[:Category:CPC_H01L29/41733|H01L29/41733]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
 
* [[:Category:CPC_H01L29/41733|H01L29/41733]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
* [[:Category:CPC_H01L29/0673|H01L29/0673]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
+
* [[:Category:CPC_H01L29/41775|H01L29/41775]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
 
* [[:Category:CPC_H01L29/42392|H01L29/42392]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
 
* [[:Category:CPC_H01L29/42392|H01L29/42392]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
* [[:Category:CPC_H01L29/66439|H01L29/66439]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
+
* [[:Category:CPC_H01L29/4908|H01L29/4908]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
* [[:Category:CPC_H01L29/6653|H01L29/6653]] ({using self aligned silicidation, i.e. salicide  (formation of conductive layers comprising silicides): 1 patents
 
 
* [[:Category:CPC_H01L29/775|H01L29/775]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
 
* [[:Category:CPC_H01L29/775|H01L29/775]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
* [[:Category:CPC_H01L29/7834|H01L29/7834]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
+
* [[:Category:CPC_H01L21/443|H01L21/443]] (Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups): 1 patents
* [[:Category:CPC_H01L21/3065|H01L21/3065]] (Plasma etching; Reactive-ion etching): 1 patents
+
* [[:Category:CPC_H01L29/45|H01L29/45]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
* [[:Category:CPC_H01L21/0206|H01L21/0206]] ({during, before or after processing of insulating layers}): 1 patents
+
* [[:Category:CPC_H01L29/66666|H01L29/66666]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
* [[:Category:CPC_H01L21/823828|H01L21/823828]] (to produce devices, e.g. integrated circuits, each consisting of a plurality of components): 1 patents
+
* [[:Category:CPC_H01L29/78606|H01L29/78606]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
* [[:Category:CPC_H01L29/42364|H01L29/42364]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
+
* [[:Category:CPC_H01L29/78618|H01L29/78618]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
* [[:Category:CPC_H01L29/517|H01L29/517]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
+
* [[:Category:CPC_H01L21/8258|H01L21/8258]] (to produce devices, e.g. integrated circuits, each consisting of a plurality of components): 1 patents
* [[:Category:CPC_H01L29/66795|H01L29/66795]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
+
* [[:Category:CPC_H01L27/12|H01L27/12]] (the substrate being other than a semiconductor body, e.g. an insulating body): 1 patents
* [[:Category:CPC_H01L29/7851|H01L29/7851]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
+
* [[:Category:CPC_H01L29/6656|H01L29/6656]] ({using self aligned silicidation, i.e. salicide  (formation of conductive layers comprising silicides): 1 patents
* [[:Category:CPC_H01L29/41775|H01L29/41775]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
+
* [[:Category:CPC_G11C11/223|G11C11/223]] ({using MOS with ferroelectric gate insulating film}): 1 patents
* [[:Category:CPC_H01L21/823456|H01L21/823456]] (to produce devices, e.g. integrated circuits, each consisting of a plurality of components): 1 patents
+
* [[:Category:CPC_H10B51/40|H10B51/40]] (ELECTRONIC MEMORY DEVICES): 1 patents
* [[:Category:CPC_H01L21/823462|H01L21/823462]] (to produce devices, e.g. integrated circuits, each consisting of a plurality of components): 1 patents
+
* [[:Category:CPC_G11C11/2257|G11C11/2257]] ({Word-line or row circuits}): 1 patents
* [[:Category:CPC_H01L21/823475|H01L21/823475]] (to produce devices, e.g. integrated circuits, each consisting of a plurality of components): 1 patents
+
* [[:Category:CPC_H10B43/30|H10B43/30]] (ELECTRONIC MEMORY DEVICES): 1 patents
* [[:Category:CPC_H01L27/088|H01L27/088]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
+
* [[:Category:CPC_H10B43/40|H10B43/40]] (ELECTRONIC MEMORY DEVICES): 1 patents
* [[:Category:CPC_H01L27/0922|H01L27/0922]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
+
* [[:Category:CPC_H10B43/50|H10B43/50]] (ELECTRONIC MEMORY DEVICES): 1 patents
* [[:Category:CPC_H01L29/1079|H01L29/1079]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
+
* [[:Category:CPC_H10B51/50|H10B51/50]] (ELECTRONIC MEMORY DEVICES): 1 patents
* [[:Category:CPC_H01L29/401|H01L29/401]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
 
* [[:Category:CPC_H01L29/66606|H01L29/66606]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
 
* [[:Category:CPC_H01L29/66621|H01L29/66621]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
 
  
 
=== Companies ===
 
=== Companies ===
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==== List of Companies ====
 
==== List of Companies ====
* Taiwan Semiconductor Manufacturing Co., Ltd.: 10 patents
+
* Taiwan Semiconductor Manufacturing Company, Ltd.: 13 patents
  
 
=== Collaborators ===
 
=== Collaborators ===
* [[:Category:Chi On Chui|Chi On Chui]][[Category:Chi On Chui]] (5 collaborations)
+
* [[:Category:Yu-Ming Lin|Yu-Ming Lin]][[Category:Yu-Ming Lin]] (8 collaborations)
* [[:Category:Meng-Han Lin|Meng-Han Lin]][[Category:Meng-Han Lin]] (4 collaborations)
+
* [[:Category:Bo-Feng Young|Bo-Feng Young]][[Category:Bo-Feng Young]] (4 collaborations)
* [[:Category:Kai-Hsuan Lee|Kai-Hsuan Lee]][[Category:Kai-Hsuan Lee]] (3 collaborations)
+
* [[:Category:Han-Jong Chia|Han-Jong Chia]][[Category:Han-Jong Chia]] (4 collaborations)
* [[:Category:Bo-Yu Lai|Bo-Yu Lai]][[Category:Bo-Yu Lai]] (3 collaborations)
+
* [[:Category:Chih-Yu Chang|Chih-Yu Chang]][[Category:Chih-Yu Chang]] (3 collaborations)
* [[:Category:Feng-Cheng Yang|Feng-Cheng Yang]][[Category:Feng-Cheng Yang]] (3 collaborations)
+
* [[:Category:Po-Ting Lin|Po-Ting Lin]][[Category:Po-Ting Lin]] (2 collaborations)
* [[:Category:Yen-Ming Chen|Yen-Ming Chen]][[Category:Yen-Ming Chen]] (3 collaborations)
+
* [[:Category:Hai-Ching Chen|Hai-Ching Chen]][[Category:Hai-Ching Chen]] (2 collaborations)
* [[:Category:Sheng-Chen Wang|Sheng-Chen Wang]][[Category:Sheng-Chen Wang]] (2 collaborations)
+
* [[:Category:Chung-Te Lin|Chung-Te Lin]][[Category:Chung-Te Lin]] (2 collaborations)
* [[:Category:Pei-Yu Wang|Pei-Yu Wang]][[Category:Pei-Yu Wang]] (2 collaborations)
+
* [[:Category:Chun-Chieh Lu|Chun-Chieh Lu]][[Category:Chun-Chieh Lu]] (2 collaborations)
 +
* [[:Category:Meng-Han Lin|Meng-Han Lin]][[Category:Meng-Han Lin]] (2 collaborations)
 +
* [[:Category:Chao-I Wu|Chao-I Wu]][[Category:Chao-I Wu]] (2 collaborations)
 +
* [[:Category:Wu-Wei Tsai|Wu-Wei Tsai]][[Category:Wu-Wei Tsai]] (1 collaborations)
 +
* [[:Category:Kai-Wen Cheng|Kai-Wen Cheng]][[Category:Kai-Wen Cheng]] (1 collaborations)
 +
* [[:Category:Han-Ting Tsai|Han-Ting Tsai]][[Category:Han-Ting Tsai]] (1 collaborations)
 +
* [[:Category:Ya-Ling Lee|Ya-Ling Lee]][[Category:Ya-Ling Lee]] (1 collaborations)
 +
* [[:Category:Po-Tsun Liu|Po-Tsun Liu]][[Category:Po-Tsun Liu]] (1 collaborations)
 +
* [[:Category:Zhen-Hao Li|Zhen-Hao Li]][[Category:Zhen-Hao Li]] (1 collaborations)
 +
* [[:Category:Tsung-Che Chiang|Tsung-Che Chiang]][[Category:Tsung-Che Chiang]] (1 collaborations)
 +
* [[:Category:Hsin-Yi Huang|Hsin-Yi Huang]][[Category:Hsin-Yi Huang]] (1 collaborations)
 
* [[:Category:Chia-En Huang|Chia-En Huang]][[Category:Chia-En Huang]] (1 collaborations)
 
* [[:Category:Chia-En Huang|Chia-En Huang]][[Category:Chia-En Huang]] (1 collaborations)
* [[:Category:Bo-Feng Young|Bo-Feng Young]][[Category:Bo-Feng Young]] (1 collaborations)
+
* [[:Category:Mauricio Manfrini|Mauricio Manfrini]][[Category:Mauricio Manfrini]] (1 collaborations)
* [[:Category:Yih-Ann Lin|Yih-Ann Lin]][[Category:Yih-Ann Lin]] (1 collaborations)
+
* [[:Category:Kuo-Chang Chiang|Kuo-Chang Chiang]][[Category:Kuo-Chang Chiang]] (1 collaborations)
* [[:Category:Ziwei Fang|Ziwei Fang]][[Category:Ziwei Fang]] (1 collaborations)
+
* [[:Category:Yu-Chuan Shih|Yu-Chuan Shih]][[Category:Yu-Chuan Shih]] (1 collaborations)
* [[:Category:Chia-Ta Yu|Chia-Ta Yu]][[Category:Chia-Ta Yu]] (1 collaborations)
+
* [[:Category:Georgios Vellianitis|Georgios Vellianitis]][[Category:Georgios Vellianitis]] (1 collaborations)
* [[:Category:Cheng-Yu Yang|Cheng-Yu Yang]][[Category:Cheng-Yu Yang]] (1 collaborations)
+
* [[:Category:Neil Quinn Murray|Neil Quinn Murray]][[Category:Neil Quinn Murray]] (1 collaborations)
* [[:Category:Min Cao|Min Cao]][[Category:Min Cao]] (1 collaborations)
+
* [[:Category:Hung-Wei Li|Hung-Wei Li]][[Category:Hung-Wei Li]] (1 collaborations)
* [[:Category:Ching-Wei Tsai|Ching-Wei Tsai]][[Category:Ching-Wei Tsai]] (1 collaborations)
+
* [[:Category:Mauricio MANFRINI|Mauricio MANFRINI]][[Category:Mauricio MANFRINI]] (1 collaborations)
* [[:Category:Kuan-Lun Cheng|Kuan-Lun Cheng]][[Category:Kuan-Lun Cheng]] (1 collaborations)
+
* [[:Category:Yi-Ching Liu|Yi-Ching Liu]][[Category:Yi-Ching Liu]] (1 collaborations)
* [[:Category:Chih-Hao Wang|Chih-Hao Wang]][[Category:Chih-Hao Wang]] (1 collaborations)
+
* [[:Category:Yih Wang|Yih Wang]][[Category:Yih Wang]] (1 collaborations)
* [[:Category:Wen-Kai Lin|Wen-Kai Lin]][[Category:Wen-Kai Lin]] (1 collaborations)
 
* [[:Category:Li Chun Te|Li Chun Te]][[Category:Li Chun Te]] (1 collaborations)
 
* [[:Category:Tien-I Bao|Tien-I Bao]][[Category:Tien-I Bao]] (1 collaborations)
 
* [[:Category:Wei-Ken Lin|Wei-Ken Lin]][[Category:Wei-Ken Lin]] (1 collaborations)
 
  
 
[[Category:Sai-Hooi Yeong]]
 
[[Category:Sai-Hooi Yeong]]
 
[[Category:Inventors]]
 
[[Category:Inventors]]
[[Category:Inventors filing patents with Taiwan Semiconductor Manufacturing Co., Ltd.]]
+
[[Category:Inventors filing patents with Taiwan Semiconductor Manufacturing Company, Ltd.]]

Revision as of 01:56, 19 July 2024

Sai-Hooi Yeong

Executive Summary

Sai-Hooi Yeong is an inventor who has filed 13 patents. Their primary areas of innovation include ELECTRONIC MEMORY DEVICES (6 patents), SEMICONDUCTOR DEVICES NOT COVERED BY CLASS (4 patents), SEMICONDUCTOR DEVICES NOT COVERED BY CLASS (4 patents), and they have worked with companies such as Taiwan Semiconductor Manufacturing Company, Ltd. (13 patents). Their most frequent collaborators include (8 collaborations), (4 collaborations), (4 collaborations).

Patent Filing Activity

Sai-Hooi Yeong Monthly Patent Applications.png

Technology Areas

Sai-Hooi Yeong Top Technology Areas.png

List of Technology Areas

  • H10B51/30 (ELECTRONIC MEMORY DEVICES): 6 patents
  • H01L29/7869 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 4 patents
  • H01L27/1159 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 4 patents
  • H10B51/20 (ELECTRONIC MEMORY DEVICES): 4 patents
  • H01L29/78391 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 4 patents
  • H01L23/5226 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 3 patents
  • H10B51/10 (ELECTRONIC MEMORY DEVICES): 3 patents
  • H01L29/66742 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 2 patents
  • H01L21/02565 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 2 patents
  • H01L29/24 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 2 patents
  • H01L29/40111 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 2 patents
  • H01L29/6684 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 2 patents
  • H01L29/78696 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 2 patents
  • H01L29/66969 ({of devices having semiconductor bodies not comprising group 14 or group 13/15 materials (comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide): 2 patents
  • H01L29/516 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 2 patents
  • H10B53/40 (ELECTRONIC MEMORY DEVICES): 1 patents
  • H01L21/383 (Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions): 1 patents
  • H01L21/425 (producing ion implantation): 1 patents
  • H01L21/477 (Organic layers, e.g. photoresist (): 1 patents
  • H01L27/11597 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
  • H01L27/11587 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
  • H01L29/0673 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
  • H01L29/41733 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
  • H01L29/41775 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
  • H01L29/42392 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
  • H01L29/4908 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
  • H01L29/775 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
  • H01L21/443 (Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups): 1 patents
  • H01L29/45 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
  • H01L29/66666 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
  • H01L29/78606 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
  • H01L29/78618 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
  • H01L21/8258 (to produce devices, e.g. integrated circuits, each consisting of a plurality of components): 1 patents
  • H01L27/12 (the substrate being other than a semiconductor body, e.g. an insulating body): 1 patents
  • H01L29/6656 ({using self aligned silicidation, i.e. salicide (formation of conductive layers comprising silicides): 1 patents
  • G11C11/223 ({using MOS with ferroelectric gate insulating film}): 1 patents
  • H10B51/40 (ELECTRONIC MEMORY DEVICES): 1 patents
  • G11C11/2257 ({Word-line or row circuits}): 1 patents
  • H10B43/30 (ELECTRONIC MEMORY DEVICES): 1 patents
  • H10B43/40 (ELECTRONIC MEMORY DEVICES): 1 patents
  • H10B43/50 (ELECTRONIC MEMORY DEVICES): 1 patents
  • H10B51/50 (ELECTRONIC MEMORY DEVICES): 1 patents

Companies

Sai-Hooi Yeong Top Companies.png

List of Companies

  • Taiwan Semiconductor Manufacturing Company, Ltd.: 13 patents

Collaborators

Subcategories

This category has the following 8 subcategories, out of 8 total.

C

F

K

M

S

Y