Difference between revisions of "Category:H01L29/78"
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Regarding famous inventors and organizations in this category: | Regarding famous inventors and organizations in this category: | ||
− | + | Inventors: | |
− | 1. | + | 1. Nick Holonyak Jr.: Often credited with the invention of the first practical visible-spectrum LED in 1962. |
− | 2. | + | 2. Shuji Nakamura: Known for the development of the blue LED, a crucial breakthrough that led to the creation of white LED lighting. |
− | + | Organizations: | |
− | 1. | + | 1. Sony Corporation: Has been instrumental in the development of laser diodes, especially for consumer electronics like CD and Blu-ray players. |
− | 2. | + | 2. Cree Inc.: Known for their innovations in LED lighting technology. |
− | 3. | + | 3. Philips: A key player in the LED market, Philips has been involved in the development of LED lighting solutions for various applications. |
− | 4. | + | 4. Osram: A global company that has contributed significantly to the development of semiconductor light sources, including LEDs. |
These inventors and companies have played crucial roles in the advancement of semiconductor light-emitting technologies, which have revolutionized lighting and display industries, among others. | These inventors and companies have played crucial roles in the advancement of semiconductor light-emitting technologies, which have revolutionized lighting and display industries, among others. |
Latest revision as of 10:37, 1 December 2023
The IPC classification "H01L29/78" is structured as follows:
- Section H: Electricity
- Class H01: Basic Electric Elements
- Subclass H01L: Semiconductor Devices; Electric Solid State Devices Not Otherwise Provided For
- Main Group H01L29/00: Semiconductor devices adapting junction formation for particular applications
- Subgroup H01L29/78: Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission
This classification involves semiconductor devices designed specifically for light emission, including technologies like Light Emitting Diodes (LEDs), laser diodes, and other optoelectronic devices.
Regarding famous inventors and organizations in this category:
Inventors: 1. Nick Holonyak Jr.: Often credited with the invention of the first practical visible-spectrum LED in 1962. 2. Shuji Nakamura: Known for the development of the blue LED, a crucial breakthrough that led to the creation of white LED lighting.
Organizations: 1. Sony Corporation: Has been instrumental in the development of laser diodes, especially for consumer electronics like CD and Blu-ray players. 2. Cree Inc.: Known for their innovations in LED lighting technology. 3. Philips: A key player in the LED market, Philips has been involved in the development of LED lighting solutions for various applications. 4. Osram: A global company that has contributed significantly to the development of semiconductor light sources, including LEDs.
These inventors and companies have played crucial roles in the advancement of semiconductor light-emitting technologies, which have revolutionized lighting and display industries, among others.
Pages in category "H01L29/78"
The following 200 pages are in this category, out of 1,585 total.
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- 17383423. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17383435. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17450121. VERTICAL FET WITH CONTACT TO GATE ABOVE ACTIVE FIN simplified abstract (International Business Machines Corporation)
- 17453874. SELF ALIGNED TOP CONTACT FOR VERTICAL TRANSISTOR simplified abstract (International Business Machines Corporation)
- 17457686. METHOD TO RELEASE NANO SHEET AFTER NANO SHEET FIN RECESS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17459855. GATE-ALL-AROUND DEVICES WITH SUPERLATTICE CHANNEL simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17460049. FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17461304. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17461714. SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17463123. CHANNEL STRUCTURES FOR SEMICONDUCTOR DEVICES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17463370. FIELD EFFECT TRANSISTOR WITH FIN ISOLATION STRUCTURE AND METHOD simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17520690. SEMICONDUCTOR DEVICE WITH BOTTOM DIELECTRIC ISOLATION simplified abstract (International Business Machines Corporation)
- 17520812. Area Scaling for VTFET Contacts simplified abstract (International Business Machines Corporation)
- 17521083. Single Process Double Gate and Variable Threshold Voltage MOSFET simplified abstract (International Business Machines Corporation)
- 17531966. NON-SELF-ALIGNED WRAP-AROUND CONTACT IN A TIGHT GATE PITCHED TRANSISTOR simplified abstract (International Business Machines Corporation)
- 17542377. GATE ALL AROUND SEMICONDUCTOR DEVICE WITH STRAINED CHANNELS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17545074. Contact and Isolation in Monolithically Stacked VTFET simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17551309. STACKED COMPLEMENTARY TRANSISTOR STRUCTURE FOR THREE-DIMENSIONAL INTEGRATION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17551428. LINER-FREE RESISTANCE CONTACTS AND SILICIDE WITH SILICIDE STOP LAYER simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17551686. SELF-ALIGNED GATE CONTACT FOR VTFETS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17551950. VERTICAL FIELD EFFECT TRANSISTOR WITH MINIMAL CONTACT TO GATE EROSION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17585932. SEMICONDUCTOR DIES INCLUDING LOW AND HIGH WORKFUNCTION SEMICONDUCTOR DEVICES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17586310. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17586705. METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17590863. METHODS OF FORMING FIN-ON-NANOSHEET TRANSISTOR STACKS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17592995. Fin Field-Effect Transistor Device and Method simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17643553. MULTILAYER WORK FUNCTION METAL IN NANOSHEET STACKS USING A SACRIFICIAL OXIDE MATERIAL simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17644100. SELECTIVE GATE CAP FOR SELF-ALIGNED CONTACTS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17644528. CROSS BAR VERTICAL FETS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17648037. Dummy Hybrid Film for Self-Alignment Contact Formation simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17651721. TRANSISTOR SOURCE/DRAIN CONTACTS AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17663278. SEMICONDUCTOR DEVICE AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17697400. VERTICAL CHANNEL TRANSISTOR simplified abstract (Samsung Electronics Co., Ltd.)
- 17703329. Transistor Gate Structures and Methods of Forming the Same simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17712726. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 17716460. SEMICONDUCTOR DEVICE, ARRAY STRUCTURE OF SEMICONDUCTOR DEVICES, NEUROMORPHIC CIRCUIT INCLUDING THE SEMICONDUCTOR DEVICES, AND COMPUTING APPARATUS INCLUDING THE NEUROMORPHIC CIRCUIT simplified abstract (Samsung Electronics Co., Ltd.)
- 17717268. SEMICONDUCTOR DEVICE INCLUDING AIR GAP simplified abstract (Samsung Electronics Co., Ltd.)
- 17743849. Semiconductor Device and Method simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17744061. Semiconductor Device and Method simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17766319. VERTICAL FIELD-EFFECT TRANSISTOR AND METHOD FOR FORMING SAME simplified abstract (Robert Bosch GmbH)
- 17808566. COMMON SELF ALIGNED GATE CONTACT FOR STACKED TRANSISTOR STRUCTURES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17809099. HIGH-VOLTAGE SEMICONDUCTOR DEVICES AND METHODS OF FORMATION simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17809329. DIFFUSION CUT STRESSORS FOR STACKED TRANSISTORS simplified abstract (Intel Corporation)
- 17819936. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17823507. FINFET WITH LONG CHANNEL LENGTH STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17831513. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17834240. THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17834694. SEMICONDUCTOR DEVICE WITH FLEXIBLE SHEET STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17834992. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 17835988. SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17836628. FIN PROFILE MODULATION simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17837150. UNIFORM SEMICONDUCTOR ACTIVE FIN WIDTH simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17838303. FIN FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17838551. SEMICONDUCTOR DEVICES HAVING IMPROVED ELECTRICAL INTERCONNECT STRUCTURES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17843970. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17847625. SPUTTER TARGETS AND SOURCES FOR SELF-DOPED SOURCE AND DRAIN CONTACTS simplified abstract (Intel Corporation)
- 17847787. METHOD FOR FORMING DUAL SILICIDE IN MANUFACTURING PROCESS OF SEMICONDUCTOR STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17848605. SEMICONDUCTOR DEVICE AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17849154. DEVICE WITH MODIFIED WORK FUNCTION LAYER AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17849424. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17849608. FERROELECTRIC DEVICE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17849739. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17850782. SIGE:GAB SOURCE OR DRAIN STRUCTURES WITH LOW RESISTIVITY simplified abstract (Intel Corporation)
- 17866966. MULTI-CHANNEL FIELD EFFECT TRANSISTORS WITH ENHANCED MULTI-LAYERED SOURCE/DRAIN REGIONS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17876737. DEVICE WITH TAPERED INSULATION STRUCTURE AND RELATED METHODS simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17883736. THICK GATE OXIDE TRANSISTOR DEVICE AND METHOD simplified abstract (Micron Technology, Inc.)
- 17883919. FINFETS WITH REDUCED PARASITICS simplified abstract (Micron Technology, Inc.)
- 17886215. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17886433. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING A SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17886472. FERROELECTRIC MEMORY DEVICE AND METHOD OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17887490. TRANSISTOR, INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF TRANSISTOR simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17892864. SEMICONDUCTOR DEVICE WITH REVERSE-CUT SOURCE/DRAIN CONTACT STRUCTURE AND METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17894614. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17896093. TRANSISTOR, INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF TRANSISTOR simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17897151. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17900639. Performance Optimization By Sizing Gates And Source/Drain Contacts Differently For Different Transistors simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17900804. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17901368. SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17933568. VERTICAL CHANNEL FIELD EFFECT TRANSISTOR (VCFET) WITH REDUCED CONTACT RESISTANCE AND/OR PARASITIC CAPACITANCE, AND RELATED FABRICATION METHODS simplified abstract (QUALCOMM Incorporated)
- 17936393. VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTORS WITH SHARED BACKSIDE POWER SUPPLY simplified abstract (International Business Machines Corporation)
- 17936434. VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN CONNECTIONS simplified abstract (International Business Machines Corporation)
- 17937473. SEMICONDUCTOR DEVICE WITH CMOS INVERTER simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17940195. BARRIER LAYER FOR DIELECTRIC RECESS MITIGATION simplified abstract (Intel Corporation)
- 17940944. FIN TRIM PLUG STRUCTURES WITH METAL FOR IMPARTING CHANNEL STRESS simplified abstract (Intel Corporation)
- 17945422. MULTI-VT SOLUTION FOR REPLACEMENT METAL GATE BONDED STACKED FET simplified abstract (International Business Machines Corporation)
- 17945467. SEMICONDUCTOR DEVICE WITH GATE STRUCTURE AND CURRENT SPREAD REGION simplified abstract (Infineon Technologies AG)
- 17945498. VTFET CIRCUIT WITH OPTIMIZED OUTPUT simplified abstract (International Business Machines Corporation)
- 17945528. FERROELECTRIC MATERIAL, AND ELECTRONIC DEVICE INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17947071. FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES WITH LOW OPERATING VOLTAGE CAPABILITIES simplified abstract (Intel Corporation)
- 17948670. SYSTEMS AND METHODS FOR PILLAR EXTENSION IN TERMINATION AREAS OF WIDE BAND GAP SUPER-JUNCTION POWER DEVICES simplified abstract (GENERAL ELECTRIC COMPANY)
- 17957599. VTFETS WITH WRAP-AROUND BACKSIDE CONTACTS simplified abstract (International Business Machines Corporation)
- 17958094. TECHNOLOGIES FOR TRANSISTORS WITH A THIN-FILM FERROELECTRIC simplified abstract (Intel Corporation)
- 17958205. TRENCH SHIELDED TRANSISTOR simplified abstract (TEXAS INSTRUMENTS INCORPORATED)
- 17958290. WALL COUPLED WITH TWO STACKS OF NANORIBBONS TO ELECTRICAL ISOLATE GATE METALS simplified abstract (Intel Corporation)
- 17958362. TECHNOLOGIES FOR ATOMIC LAYER DEPOSITION FOR FERROELECTRIC TRANSISTORS simplified abstract (Intel Corporation)
- 17960277. SEMICONDUCTOR DEVICE WITH CHANNEL PATTERNS HAVING DIFFERENT WIDTHS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17969491. SEMICONDUCTOR DEVICE INCLUDING CONTACT PLUG simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17976955. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17977013. EPITAXIAL WAFER AND SEMICONDUCTOR MEMORY DEVICE USING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17977420. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)
- 17983856. SEMICONDUCTOR ELEMENT AND MULTIPLEXER INCLUDING A PLURALITY OF SEMICONDUCTOR ELEMENTS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17984042. 3DSFET STANDARD CELL ARCHITECTURE WITH SOURCE-DRAIN JUNCTION ISOLATION simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17986119. Finfet Device Having A Channel Defined In A Diamond-Like Shape Semiconductor Structure simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17986237. SEMICONDUCTOR DEVICE AND SEMICONDUCTOR APPARATUS INCLUDING THE SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18047412. Semiconductor Device with Multi-Layer Dielectric and Methods of Forming the Same simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18047954. OPTIMIZATION OF VERTICAL TRANSPORT FIELD EFFECT TRANSISTOR INTEGRATION simplified abstract (QUALCOMM Incorporated)
- 18060372. DOMAIN SWITCHING DEVICES AND METHODS OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18063987. VERTICAL TRANSPORT FIELD-EFFECT TRANSISTOR WITH LATE FIN CUT simplified abstract (International Business Machines Corporation)
- 18065663. LOW RESISTANCE METALIZATION FOR CONNECTING A VERTICAL TRANSPORT FET SINGLE-CPP INVERTER simplified abstract (International Business Machines Corporation)
- 18067168. INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18069077. VERTICAL FIELD EFFECT TRANSISTOR WITH SELF-ALIGNED BACKSIDE TRENCH EPITAXY simplified abstract (International Business Machines Corporation)
- 18071168. VERTICAL FIELD EFFECT TRANSISTOR (VFET) STRUCTURE WITH DIELECTRIC PROTECTION LAYER AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18072201. LOCOS FILLET FOR DRAIN REDUCED BREAKDOWN IN HIGH VOLTAGE TRANSISTORS simplified abstract (TEXAS INSTRUMENTS INCORPORATED)
- 18072515. LDMOS DEVICE AND METHOD OF FABRICATION OF SAME simplified abstract (TEXAS INSTRUMENTS INCORPORATED)
- 18072784. SEMICONDUCTOR DEVICES HAVING SPACER STRUCTURES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18077281. INTEGRATED CIRCUIT DEVICE INCLUDING GATE CONTACT simplified abstract (Samsung Electronics Co., Ltd.)
- 18077394. INTEGRATION OF FINFET AND GATE-ALL-AROUND DEVICES simplified abstract (Intel Corporation)
- 18080892. DIFFUSION BREAK STRUCTURE FOR TRANSISTORS simplified abstract (International Business Machines Corporation)
- 18082617. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18083818. FLEXIBLE MOL AND/OR BEOL STRUCTURE simplified abstract (International Business Machines Corporation)
- 18084484. SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18084484. SEMICONDUCTOR DEVICE simplified abstract (TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION)
- 18085426. SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18085871. METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18088542. GALLIUM NITRIDE (GAN) LAYER ON SUBSTRATE CARBURIZATION FOR INTEGRATED CIRCUIT TECHNOLOGY simplified abstract (Intel Corporation)
- 18089919. TRANSISTOR WITH A BODY AND BACK GATE STRUCTURE IN DIFFERENT MATERIAL LAYERS simplified abstract (Intel Corporation)
- 18090816. INTEGRATED CIRCUIT STRUCTURES HAVING BIT-COST SCALING WITH RELAXED TRANSISTOR AREA simplified abstract (Intel Corporation)
- 18093877. INTEGRATED CIRCUITS AND METHODS OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18093932. CMOS TOP SOURCE/DRAIN REGION DOPING AND EPITAXIAL GROWTH FOR A VERTICAL FIELD EFFECT TRANSISTOR simplified abstract (International Business Machines Corporation)
- 18096663. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18097255. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18097323. CONTACT STRUCTURES WITH DEPOSITED SILICIDE LAYERS simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18098999. FIELD-EFFECT TRANSISTORS FORMED USING A WIDE BANDGAP SEMICONDUCTOR MATERIAL simplified abstract (GlobalFoundries U.S. Inc.)
- 18099405. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18100302. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18105164. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18105164. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME simplified abstract (TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION)
- 18105887. SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF simplified abstract (UNITED MICROELECTRONICS CORP.)
- 18105955. METHOD FOR FORMING A SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18106540. INTEGRATED CIRCUIT DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18107516. HIGH-VOLTAGE TRANSISTOR, LEVEL-UP SHIFTING CIRCUIT, AND SEMICONDUCTOR DEVICE simplified abstract (UNITED MICROELECTRONICS CORP.)
- 18107990. Semiconductor Device and Fabricating Method Thereof simplified abstract (UNITED MICROELECTRONICS CORP.)
- 18108019. EDMOS AND FABRICATING METHOD OF THE SAME simplified abstract (UNITED MICROELECTRONICS CORP.)
- 18110488. POWER MANAGEMENT INTEGRATED CIRCUIT AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18111995. DEVICE WITH WORKFUNCTION METAL IN DRIFT REGION simplified abstract (GlobalFoundries U.S. Inc.)
- 18112213. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18112213. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION)
- 18112312. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18113445. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18113445. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION)
- 18120704. SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18120704. SEMICONDUCTOR DEVICE simplified abstract (TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION)
- 18120845. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18134555. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (UNITED MICROELECTRONICS CORP.)
- 18138728. POWER METAL-OXIDE-SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract (United Microelectronics Corp.)
- 18139060. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract (Infineon Technologies AG)
- 18141060. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18143076. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (United Microelectronics Corp.)
- 18143095. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (United Microelectronics Corp.)
- 18143314. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18145059. VTFET CELL BOUNDARY HAVING AN IN-LINE CONTACT simplified abstract (International Business Machines Corporation)
- 18148871. FIELD EFFECT TRANSISTOR COMPRISING TRANSITION METAL DICHALCOGENIDE (TMD) AND FERROELECTRIC MATERIAL simplified abstract (Intel Corporation)
- 18149128. FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18149495. FINFET EPI CHANNELS HAVING DIFFERENT HEIGHTS ON A STEPPED SUBSTRATE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18149734. VERTICALLY STACKED FeFETS WITH COMMON CHANNEL simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18150809. SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)
- 18151575. METAL GATE STRUCTURES FOR FIELD EFFECT TRANSISTORS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18151624. Integrated Circuits With Contacting Gate Structures simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18151792. FILM MODIFICATION FOR GATE CUT PROCESS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18151990. METHOD OF MAKING A SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18152169. SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18153571. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18155392. Gate All Around Transistor Device and Fabrication Methods Thereof simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18155887. SILICIDE-SANDWICHED SOURCE/DRAIN REGION AND METHOD OF FABRICATING SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18157352. Method and Structure for FinFET Isolation simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18157395. STRUCTURE OF ISOLATION FEATURE OF SEMICONDUCTOR DEVICE STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18157416. SEMICONDUCTOR DEVICE INCLUDING GRAPHENE simplified abstract (Samsung Electronics Co., Ltd.)
- 18157478. VERTICAL TYPE TRANSISTOR, INVERTER INCLUDING THE SAME, AND VERTICAL TYPE SEMICONDUCTOR DEVICE INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18157939. SEMICONDUCTOR DEVICE INCLUDING POROUS SEMICONDUCTOR MATERIAL ADJACENT AN ISOLATION STRUCTURE simplified abstract (GlobalFoundries U.S. Inc.)
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