Difference between revisions of "SanDisk Technologies LLC patent applications published on March 21st, 2024"
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+ | '''Summary of the patent applications from SanDisk Technologies LLC on March 21st, 2024''' | ||
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+ | SanDisk Technologies LLC has recently filed patents for innovative technologies related to memory stack structures, three-dimensional memory devices, and voltage mode drivers with on-die termination. These patents aim to improve the efficiency, performance, and reliability of memory devices and electronic systems. | ||
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+ | Summary: | ||
+ | - Memory stack structures are formed using vertically alternating layers of insulating and sacrificial material, with backside support pillar structures and backside trenches for structural support. | ||
+ | - A three-dimensional memory device is described with alternating insulating and conductive layers, a memory opening, and a memory opening fill structure. | ||
+ | - Systems and methods are detailed for enhancing the power, performance, and area efficiency of voltage mode drivers and on-die termination circuits. | ||
+ | |||
+ | Notable Applications: | ||
+ | - Memory stack structure formation method for improved performance in memory devices. | ||
+ | - Three-dimensional memory devices for high-density memory applications. | ||
+ | - Voltage mode drivers with on-die termination for efficient electronic systems. | ||
+ | |||
+ | |||
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==Patent applications for SanDisk Technologies LLC on March 21st, 2024== | ==Patent applications for SanDisk Technologies LLC on March 21st, 2024== | ||
Revision as of 02:43, 26 March 2024
Summary of the patent applications from SanDisk Technologies LLC on March 21st, 2024
SanDisk Technologies LLC has recently filed patents for innovative technologies related to memory stack structures, three-dimensional memory devices, and voltage mode drivers with on-die termination. These patents aim to improve the efficiency, performance, and reliability of memory devices and electronic systems.
Summary: - Memory stack structures are formed using vertically alternating layers of insulating and sacrificial material, with backside support pillar structures and backside trenches for structural support. - A three-dimensional memory device is described with alternating insulating and conductive layers, a memory opening, and a memory opening fill structure. - Systems and methods are detailed for enhancing the power, performance, and area efficiency of voltage mode drivers and on-die termination circuits.
Notable Applications: - Memory stack structure formation method for improved performance in memory devices. - Three-dimensional memory devices for high-density memory applications. - Voltage mode drivers with on-die termination for efficient electronic systems.
Contents
- 1 Patent applications for SanDisk Technologies LLC on March 21st, 2024
- 1.1 PERSISTENT MEMORY MANAGEMENT (18523671)
- 1.2 SEMICONDUCTOR DEVICE HAVING EDGE SEAL AND METHOD OF MAKING THEREOF WITHOUT METAL HARD MASK ARCING (17932887)
- 1.3 SEMICONDUCTOR DEVICE HAVING EDGE SEAL AND METHOD OF MAKING THEREOF WITHOUT METAL HARD MASK ARCING (17932907)
- 1.4 APPARATUS AND METHODS FOR BONDING PAD REDISTRIBUTION LAYERS IN INTEGRATED CIRCUITS (17947672)
- 1.5 HIGH DENSITY SEMICONDUCTOR DEVICE INCLUDING INTEGRATED CONTROLLER, LOGIC CIRCUIT AND MEMORY DIES (17949069)
- 1.6 PPA IMPROVEMENT FOR VOLTAGE MODE DRIVER AND ON-DIE TERMINATION (ODT) (17949990)
- 1.7 THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF USING SELECTIVE METAL NITRIDE DEPOSITION ON DIELECTRIC METAL OXIDE BLOCKING DIELECTRIC (17932942)
- 1.8 THREE-DIMENSIONAL MEMORY DEVICE WITH BACKSIDE SUPPORT PILLAR STRUCTURES AND METHODS OF FORMING THE SAME (18524552)
Patent applications for SanDisk Technologies LLC on March 21st, 2024
PERSISTENT MEMORY MANAGEMENT (18523671)
Main Inventor
Nisha Talagala
SEMICONDUCTOR DEVICE HAVING EDGE SEAL AND METHOD OF MAKING THEREOF WITHOUT METAL HARD MASK ARCING (17932887)
Main Inventor
Kazuto WATANABE
SEMICONDUCTOR DEVICE HAVING EDGE SEAL AND METHOD OF MAKING THEREOF WITHOUT METAL HARD MASK ARCING (17932907)
Main Inventor
Michiaki SANO
APPARATUS AND METHODS FOR BONDING PAD REDISTRIBUTION LAYERS IN INTEGRATED CIRCUITS (17947672)
Main Inventor
Guangyuan Li
HIGH DENSITY SEMICONDUCTOR DEVICE INCLUDING INTEGRATED CONTROLLER, LOGIC CIRCUIT AND MEMORY DIES (17949069)
Main Inventor
Jayavel Pachamuthu
PPA IMPROVEMENT FOR VOLTAGE MODE DRIVER AND ON-DIE TERMINATION (ODT) (17949990)
Main Inventor
NIRAV NATWARBHAI PATEL
THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF USING SELECTIVE METAL NITRIDE DEPOSITION ON DIELECTRIC METAL OXIDE BLOCKING DIELECTRIC (17932942)
Main Inventor
Tatsuya HINOUE
THREE-DIMENSIONAL MEMORY DEVICE WITH BACKSIDE SUPPORT PILLAR STRUCTURES AND METHODS OF FORMING THE SAME (18524552)
Main Inventor
Shunsuke TAKUMA