Samsung electronics co., ltd. (20250004381). METHOD OF FORMING PHOTORESIST PATTERNS AND BAKING EQUIPMENT: Difference between revisions
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==Inventor(s)== | ==Inventor(s)== | ||
[[:Category:Hyungju Ryu of Suwon-si | [[:Category:Hyungju Ryu of Suwon-si KR|Hyungju Ryu of Suwon-si KR]][[Category:Hyungju Ryu of Suwon-si KR]] | ||
[[:Category:Dokyeong Kwon of Suwon-si | [[:Category:Dokyeong Kwon of Suwon-si KR|Dokyeong Kwon of Suwon-si KR]][[Category:Dokyeong Kwon of Suwon-si KR]] | ||
[[:Category:Sangjin Kim of Suwon-si | [[:Category:Sangjin Kim of Suwon-si KR|Sangjin Kim of Suwon-si KR]][[Category:Sangjin Kim of Suwon-si KR]] | ||
[[:Category:Changmin Park of Suwon-si | [[:Category:Changmin Park of Suwon-si KR|Changmin Park of Suwon-si KR]][[Category:Changmin Park of Suwon-si KR]] | ||
==METHOD OF FORMING PHOTORESIST PATTERNS AND BAKING EQUIPMENT== | ==METHOD OF FORMING PHOTORESIST PATTERNS AND BAKING EQUIPMENT== | ||
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This abstract first appeared for US patent application 20250004381 titled 'METHOD OF FORMING PHOTORESIST PATTERNS AND BAKING EQUIPMENT | This abstract first appeared for US patent application 20250004381 titled 'METHOD OF FORMING PHOTORESIST PATTERNS AND BAKING EQUIPMENT | ||
==Original Abstract Submitted== | ==Original Abstract Submitted== | ||
Latest revision as of 02:46, 25 March 2025
METHOD OF FORMING PHOTORESIST PATTERNS AND BAKING EQUIPMENT
Organization Name
Inventor(s)
METHOD OF FORMING PHOTORESIST PATTERNS AND BAKING EQUIPMENT
This abstract first appeared for US patent application 20250004381 titled 'METHOD OF FORMING PHOTORESIST PATTERNS AND BAKING EQUIPMENT
Original Abstract Submitted
methods of forming a photoresist pattern are provided. a photoresist layer may be formed on a substrate. an exposure process may be performed on the photoresist layer. a post exposure baking (peb) process may be performed on the photoresist layer with a temperature gradient in the photoresist layer in a vertical direction substantially perpendicular to an upper surface of the substrate. a development process may be performed on the photoresist layer.
