Difference between revisions of "Spintronics Patent Application Trends 2024"

@@ Line 8: / Line 8: @@
 === Top CPC Codes ===
 * [[:Category:CPC_H10N50/85|H10N50/85]] (No explanation available)
-** Count: 33 patents
+** Count: 34 patents
 ** Example: [[20240130247. MAGNETIZATION ROTATIONAL ELEMENT AND MAGNETORESISTIVE EFFECT ELEMENT (TDK CORPORATION)]]
-* [[:Category:CPC_G11C11/161|G11C11/161]] (using elements in which the storage effect is based on magnetic spin effect)
+* [[:Category:CPC_G11C11/161|G11C11/161]] (No explanation available)
-** Count: 31 patents
+** Count: 32 patents
 ** Example: [[20240130247. MAGNETIZATION ROTATIONAL ELEMENT AND MAGNETORESISTIVE EFFECT ELEMENT (TDK CORPORATION)]]
 * [[:Category:CPC_H10N50/10|H10N50/10]] (No explanation available)
 ** Count: 27 patents
 ** Example: [[20240130247. MAGNETIZATION ROTATIONAL ELEMENT AND MAGNETORESISTIVE EFFECT ELEMENT (TDK CORPORATION)]]
-* [[:Category:CPC_H10B61/00|H10B61/00]] (Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices)
+* [[:Category:CPC_H10B61/00|H10B61/00]] (No explanation available)
 ** Count: 24 patents
 ** Example: [[20240130247. MAGNETIZATION ROTATIONAL ELEMENT AND MAGNETORESISTIVE EFFECT ELEMENT (TDK CORPORATION)]]
@@ Line 25: / Line 25: @@
 ** Count: 20 patents
 ** Example: [[20240237547. DOMAIN WALL DISPLACEMENT ELEMENT, MAGNETIC ARRAY, AND METHOD OF MANUFACTURING DOMAIN WALL DISPLACEMENT ELEMENT (TDK CORPORATION)]]
-* [[:Category:CPC_G01R33/098|G01R33/098]] ({comprising tunnel junctions, e.g. tunnel magnetoresistance sensors})
+* [[:Category:CPC_G01R33/098|G01R33/098]] (No explanation available)
 ** Count: 17 patents
 ** Example: [[20240230791. SELF-CALIBRATING MAGNETORESISTANCE-BASED MAGNETIC FIELD SENSORS (Allegro MicroSystems, LLC)]]
-* [[:Category:CPC_G11C11/1675|G11C11/1675]] ({Writing or programming circuits or methods})
+* [[:Category:CPC_G11C11/1675|G11C11/1675]] (No explanation available)
-** Count: 16 patents
+** Count: 17 patents
 ** Example: [[20240130247. MAGNETIZATION ROTATIONAL ELEMENT AND MAGNETORESISTIVE EFFECT ELEMENT (TDK CORPORATION)]]
-* [[:Category:CPC_H10B61/22|H10B61/22]] (ELECTRONIC MEMORY DEVICES)
+* [[:Category:CPC_H10N50/20|H10N50/20]] (No explanation available)
 ** Count: 14 patents
 ** Example: [[20240237547. DOMAIN WALL DISPLACEMENT ELEMENT, MAGNETIC ARRAY, AND METHOD OF MANUFACTURING DOMAIN WALL DISPLACEMENT ELEMENT (TDK CORPORATION)]]
-* [[:Category:CPC_H10N50/20|H10N50/20]] (No explanation available)
+* [[:Category:CPC_H10B61/22|H10B61/22]] (No explanation available)
-** Count: 13 patents
+** Count: 14 patents
 ** Example: [[20240237547. DOMAIN WALL DISPLACEMENT ELEMENT, MAGNETIC ARRAY, AND METHOD OF MANUFACTURING DOMAIN WALL DISPLACEMENT ELEMENT (TDK CORPORATION)]]
@@ Line 44: / Line 44: @@
 * Number of Spintronics patents: 12
 * Top CPC codes:
-** [[:Category:CPC_H10B61/00|H10B61/00]] (Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices): 7 patents
+** [[:Category:CPC_H10B61/00|H10B61/00]] (No explanation available): 7 patents
-** [[:Category:CPC_G11C11/161|G11C11/161]] (using elements in which the storage effect is based on magnetic spin effect): 6 patents
+** [[:Category:CPC_G11C11/161|G11C11/161]] (No explanation available): 6 patents
 ** [[:Category:CPC_H10N50/85|H10N50/85]] (No explanation available): 6 patents
 * Recent patents:
@@ Line 51: / Line 51: @@
 ** [[20240365684. SPIN CURRENT MAGNETIZATION ROTATIONAL ELEMENT, SPIN CURRENT MAGNETIZATION ROTATIONAL TYPE MAGNETORESISTIVE ELEMENT, MAGNETIC MEMORY, AND MAGNETIZATION ROTATION METHOD (TDK CORPORATION)]] (20241031)
 ** [[20240334839. MAGNETORESISTANCE EFFECT ELEMENT (TDK CORPORATION)]] (20241003)
+=== [[:Category:Western Digital Technologies, Inc.|Western Digital Technologies, Inc.]] ===
+* Number of Spintronics patents: 9
+* Top CPC codes:
+** [[:Category:CPC_G11B5/39|G11B5/39]] (No explanation available): 3 patents
+** [[:Category:CPC_H01L43/10|H01L43/10]] (No explanation available): 3 patents
+** [[:Category:CPC_H01L43/04|H01L43/04]] (No explanation available): 3 patents
+* Recent patents:
+** [[20240240994. Thermal Sensor insitu monitoring of Magnetic Recording head (Western Digital Technologies, Inc.)]] (20240718)
+** [[20240112840. Cobalt-Boron (CoB) Layer for Magnetic Recording Devices, Memory Devices, and Storage Devices (Western Digital Technologies, Inc.)]] (20240404)
+** [[20240032437. Buffer Layers, Interlayers, and Barrier Layers Comprising Heusler Alloys for SOT Based Sensor, Memory, and Storage Devices (Western Digital Technologies, Inc.)]] (20240125)
 === [[:Category:Allegro MicroSystems, LLC|Allegro MicroSystems, LLC]] ===
 * Number of Spintronics patents: 8
 * Top CPC codes:
-** [[:Category:CPC_G01R33/098|G01R33/098]] ({comprising tunnel junctions, e.g. tunnel magnetoresistance sensors}): 5 patents
+** [[:Category:CPC_G01R33/098|G01R33/098]] (No explanation available): 5 patents
-** [[:Category:CPC_G01R33/093|G01R33/093]] ({using multilayer structures, e.g. giant magnetoresistance sensors  (thin magnetic films): 4 patents
+** [[:Category:CPC_G01R33/093|G01R33/093]] (No explanation available): 4 patents
-** [[:Category:CPC_G01R33/0052|G01R33/0052]] (Arrangements or instruments for measuring magnetic variables): 3 patents
+** [[:Category:CPC_G01R33/0052|G01R33/0052]] (No explanation available): 3 patents
 * Recent patents:
 ** [[20240175947. MAGNETORESISTANCE BRIDGE CIRCUITS WITH STRAY FIELD IMMUNITY (Allegro MicroSystems, LLC)]] (20240530)
 ** [[20240074322. FABRICATING AN ELECTROCONDUCTIVE CONTACT ON A TOP LAYER OF A TUNNELING MAGNETORESISTANCE ELEMENT USING TWO HARD MASKS (Allegro MicroSystems, LLC)]] (20240229)
 ** [[20240085463. MULTI-TERMINAL DEVICES USING MAGNETORESISTANCE ELEMENTS (Allegro MicroSystems, LLC)]] (20240314)
-=== [[:Category:Western Digital Technologies, Inc.|Western Digital Technologies, Inc.]] ===
-* Number of Spintronics patents: 8
-* Top CPC codes:
-** [[:Category:CPC_H01L43/10|H01L43/10]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 3 patents
-** [[:Category:CPC_H01L43/04|H01L43/04]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 3 patents
-** [[:Category:CPC_H01L43/06|H01L43/06]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 3 patents
-* Recent patents:
-** [[20240240994. Thermal Sensor insitu monitoring of Magnetic Recording head (Western Digital Technologies, Inc.)]] (20240718)
-** [[20240112840. Cobalt-Boron (CoB) Layer for Magnetic Recording Devices, Memory Devices, and Storage Devices (Western Digital Technologies, Inc.)]] (20240404)
-** [[20240032437. Buffer Layers, Interlayers, and Barrier Layers Comprising Heusler Alloys for SOT Based Sensor, Memory, and Storage Devices (Western Digital Technologies, Inc.)]] (20240125)
 === [[:Category:Kioxia Corporation|Kioxia Corporation]] ===
 * Number of Spintronics patents: 8
 * Top CPC codes:
 ** [[:Category:CPC_H10N50/10|H10N50/10]] (No explanation available): 6 patents
-** [[:Category:CPC_H10B61/10|H10B61/10]] (ELECTRONIC MEMORY DEVICES): 6 patents
+** [[:Category:CPC_H10B61/10|H10B61/10]] (No explanation available): 6 patents
 ** [[:Category:CPC_H10N50/80|H10N50/80]] (No explanation available): 4 patents
 * Recent patents:
@@ Line 84: / Line 84: @@
 * Number of Spintronics patents: 4
 * Top CPC codes:
-** [[:Category:CPC_H10B61/00|H10B61/00]] (Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices): 3 patents
+** [[:Category:CPC_H10B61/00|H10B61/00]] (No explanation available): 3 patents
 ** [[:Category:CPC_H10N50/01|H10N50/01]] (No explanation available): 3 patents
 ** [[:Category:CPC_H10N50/85|H10N50/85]] (No explanation available): 3 patents
@@ Line 94: / Line 94: @@
 * Number of Spintronics patents: 3
 * Top CPC codes:
-** [[:Category:CPC_G11C11/161|G11C11/161]] (using elements in which the storage effect is based on magnetic spin effect): 2 patents
+** [[:Category:CPC_G11C11/161|G11C11/161]] (No explanation available): 2 patents
 ** [[:Category:CPC_H10N50/20|H10N50/20]] (No explanation available): 2 patents
-** [[:Category:CPC_G11C11/1655|G11C11/1655]] ({Bit-line or column circuits}): 2 patents
+** [[:Category:CPC_G11C11/1655|G11C11/1655]] (No explanation available): 2 patents
 * Recent patents:
 ** [[20240013826. SPINTRONIC DEVICE, MEMORY CELL, MEMORY ARRAY AND READ AND WRITE CIRCUIT (INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES)]] (20240111)
@@ Line 105: / Line 105: @@
 * Top CPC codes:
 ** [[:Category:CPC_H10N50/01|H10N50/01]] (No explanation available): 3 patents
-** [[:Category:CPC_G11C11/161|G11C11/161]] (using elements in which the storage effect is based on magnetic spin effect): 2 patents
+** [[:Category:CPC_G11C11/161|G11C11/161]] (No explanation available): 2 patents
 ** [[:Category:CPC_H10N50/80|H10N50/80]] (No explanation available): 2 patents
 * Recent patents:
@@ Line 114: / Line 114: @@
 * Number of Spintronics patents: 2
 * Top CPC codes:
-** [[:Category:CPC_H10B61/00|H10B61/00]] (Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices): 2 patents
+** [[:Category:CPC_H10B61/00|H10B61/00]] (No explanation available): 2 patents
 ** [[:Category:CPC_H10N50/01|H10N50/01]] (No explanation available): 2 patents
 ** [[:Category:CPC_H10N50/85|H10N50/85]] (No explanation available): 2 patents
@@ Line 123: / Line 123: @@
 * Number of Spintronics patents: 2
 * Top CPC codes:
-** [[:Category:CPC_G01N33/54326|G01N33/54326]] ({Magnetic particles}): 1 patents
+** [[:Category:CPC_G01N33/54326|G01N33/54326]] (No explanation available): 1 patents
-** [[:Category:CPC_G01N2446/60|G01N2446/60]] (INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES  (measuring or testing processes other than immunoassay, involving enzymes or microorganisms): 1 patents
+** [[:Category:CPC_G01N2446/60|G01N2446/60]] (No explanation available): 1 patents
-** [[:Category:CPC_G01N33/54306|G01N33/54306]] ({Solid-phase reaction mechanisms}): 1 patents
+** [[:Category:CPC_G01N33/54306|G01N33/54306]] (No explanation available): 1 patents
 * Recent patents:
 ** [[20240118271. METHOD FOR IMMUNOSENSING ON A LIPID LAYER USING MAGNETIC TUNNEL JUNCTIONS (Roche Diagnostics Operations, Inc.)]] (20240411)
@@ Line 132: / Line 132: @@
 * Number of Spintronics patents: 2
 * Top CPC codes:
-** [[:Category:CPC_G11C11/161|G11C11/161]] (using elements in which the storage effect is based on magnetic spin effect): 1 patents
+** [[:Category:CPC_G11C11/161|G11C11/161]] (No explanation available): 1 patents
-** [[:Category:CPC_G11C11/1675|G11C11/1675]] ({Writing or programming circuits or methods}): 1 patents
+** [[:Category:CPC_G11C11/1675|G11C11/1675]] (No explanation available): 1 patents
-** [[:Category:CPC_H10B61/00|H10B61/00]] (Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices): 1 patents
+** [[:Category:CPC_H10B61/00|H10B61/00]] (No explanation available): 1 patents
 * Recent patents:
 ** [[20240249759. MULTILAYERED VERTICAL SPIN-ORBIT TORQUE DEVICES (Samsung Electronics Co., Ltd.)]] (20240725)
@@ Line 147: / Line 147: @@
 [[File:Emerging_Technology_Areas_in_Spintronics.png|border|800px]]
-* [[:Category:CPC_Y10S148/109|Y10S148/109]] (No explanation available)
-** Count: 1 patents
-** Example: [[20240047115. SWITCHING OF PERPENDICULARLY MAGNETIZED NANOMAGNETS WITH SPIN-ORBIT TORQUES IN THE ABSENCE OF EXTERNAL MAGNETIC FIELDS (University of Rochester)]]
 * [[:Category:CPC_H10N50/00|H10N50/00]] (No explanation available)
 ** Count: 1 patents
 ** Example: [[20240047115. SWITCHING OF PERPENDICULARLY MAGNETIZED NANOMAGNETS WITH SPIN-ORBIT TORQUES IN THE ABSENCE OF EXTERNAL MAGNETIC FIELDS (University of Rochester)]]
-* [[:Category:CPC_H03K19/18|H03K19/18]] (PULSE TECHNIQUE  (measuring pulse characteristics)
+* [[:Category:CPC_B82Y5/00|B82Y5/00]] (No explanation available)
-** Count: 1 patents
-** Example: [[20240047115. SWITCHING OF PERPENDICULARLY MAGNETIZED NANOMAGNETS WITH SPIN-ORBIT TORQUES IN THE ABSENCE OF EXTERNAL MAGNETIC FIELDS (University of Rochester)]]
-* [[:Category:CPC_B82Y5/00|B82Y5/00]] (Nanobiotechnology or nanomedicine, e.g. protein engineering or drug delivery)
 ** Count: 1 patents
 ** Example: [[20240042064. NANO- OR MICROPARTICLE COMPRISING A POLYVINYL ALCOHOL MATRIX AND DISPERSED THEREIN, FERRITE, METHOD FOR PRODUCING THE SAME AND USES THEREOF (COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES)]]
-* [[:Category:CPC_A61K49/1854|A61K49/1854]] (PREPARATIONS FOR MEDICAL, DENTAL OR TOILETRY PURPOSES  (devices or methods specially adapted for bringing pharmaceutical products into particular physical or administering forms)
+* [[:Category:CPC_A61K49/1854|A61K49/1854]] (No explanation available)
 ** Count: 1 patents
 ** Example: [[20240042064. NANO- OR MICROPARTICLE COMPRISING A POLYVINYL ALCOHOL MATRIX AND DISPERSED THEREIN, FERRITE, METHOD FOR PRODUCING THE SAME AND USES THEREOF (COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES)]]
-* [[:Category:CPC_H01F41/32|H01F41/32]] (for applying conductive, insulating or magnetic material on a magnetic film {, specially adapted for a thin magnetic film})
+* [[:Category:CPC_H01F41/32|H01F41/32]] (No explanation available)
 ** Count: 1 patents
 ** Example: [[20240087786. MRAM STACKS, MRAM DEVICES AND METHODS OF FORMING THE SAME (Taiwan Semiconductor Manufacturing Company, Ltd.)]]
-* [[:Category:CPC_H03K19/21|H03K19/21]] (PULSE TECHNIQUE  (measuring pulse characteristics)
+* [[:Category:CPC_H03K19/21|H03K19/21]] (No explanation available)
 ** Count: 1 patents
 ** Example: [[20240087628. MULTI-RESISTANCE-STATE SPINTRONIC DEVICE, READ-WRITE CIRCUIT, AND IN-MEMORY BOOLEAN LOGIC OPERATOR (INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES)]]
-* [[:Category:CPC_G01R19/0092|G01R19/0092]] (Arrangements for measuring currents or voltages or for indicating presence or sign thereof  ()
+* [[:Category:CPC_G01R19/0092|G01R19/0092]] (No explanation available)
 ** Count: 1 patents
 ** Example: [[20240085463. MULTI-TERMINAL DEVICES USING MAGNETORESISTANCE ELEMENTS (Allegro MicroSystems, LLC)]]
-* [[:Category:CPC_G11B2005/0024|G11B2005/0024]] (INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER  (recording measured values in a way that does not require playback through a transducer)
+* [[:Category:CPC_G11B2005/0024|G11B2005/0024]] (No explanation available)
 ** Count: 1 patents
 ** Example: [[20240112840. Cobalt-Boron (CoB) Layer for Magnetic Recording Devices, Memory Devices, and Storage Devices (Western Digital Technologies, Inc.)]]
-* [[:Category:CPC_C22C19/07|C22C19/07]] (ALLOYS  (flints)
+* [[:Category:CPC_C22C19/07|C22C19/07]] (No explanation available)
 ** Count: 1 patents
 ** Example: [[20240112840. Cobalt-Boron (CoB) Layer for Magnetic Recording Devices, Memory Devices, and Storage Devices (Western Digital Technologies, Inc.)]]
+* [[:Category:CPC_H01F10/16|H01F10/16]] (No explanation available)
+** Count: 1 patents
+** Example: [[20240112695. MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC RECORDING ELEMENT, AND HIGH-FREQUENCY DEVICE (TDK CORPORATION)]]
+* [[:Category:CPC_H10N59/00|H10N59/00]] (No explanation available)
+** Count: 1 patents
+** Example: [[20240111006. METHODS FOR TUNNEL MAGNETORESISTANCE MULTI-TURN SENSOR MANUFACTURE AND READ-OUT (Analog Devices International Unlimited Company)]]
 == Top Companies in Emerging Spintronics Technologies ==
 [[File:Top_Companies_in_Emerging_Spintronics_Technologies.png|border|800px]]
-* [[:Category:University of Rochester|University of Rochester]]: 3 patents
 * [[:Category:Western Digital Technologies, Inc.|Western Digital Technologies, Inc.]]: 2 patents
 * [[:Category:COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES|COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES]]: 2 patents
 * [[:Category:Allegro MicroSystems, LLC|Allegro MicroSystems, LLC]]: 1 patents
+* [[:Category:TDK CORPORATION|TDK CORPORATION]]: 1 patents
 * [[:Category:INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES|INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES]]: 1 patents
+* [[:Category:University of Rochester|University of Rochester]]: 1 patents
 * [[:Category:Taiwan Semiconductor Manufacturing Company, Ltd.|Taiwan Semiconductor Manufacturing Company, Ltd.]]: 1 patents
+* [[:Category:Analog Devices International Unlimited Company|Analog Devices International Unlimited Company]]: 1 patents
 == Top Inventors in Spintronics ==
@@ Line 192: / Line 194: @@
 === [[:Category:Quang LE|Quang LE of San Jose CA (US)]] ===
-* Number of Spintronics patents: 8
+* Number of Spintronics patents: 9
 * Top companies:
-** [[:Category:Western Digital Technologies, Inc.|Western Digital Technologies, Inc.]]: 8 patents
+** [[:Category:Western Digital Technologies, Inc.|Western Digital Technologies, Inc.]]: 9 patents
 * Recent patents:
 ** [[20240240994. Thermal Sensor insitu monitoring of Magnetic Recording head (Western Digital Technologies, Inc.)]] (20240718)
@@ Line 200: / Line 202: @@
 ** [[20240032437. Buffer Layers, Interlayers, and Barrier Layers Comprising Heusler Alloys for SOT Based Sensor, Memory, and Storage Devices (Western Digital Technologies, Inc.)]] (20240125)
 === [[:Category:Brian R. YORK|Brian R. YORK of San Jose CA (US)]] ===
-* Number of Spintronics patents: 8
+* Number of Spintronics patents: 9
 * Top companies:
-** [[:Category:Western Digital Technologies, Inc.|Western Digital Technologies, Inc.]]: 8 patents
+** [[:Category:Western Digital Technologies, Inc.|Western Digital Technologies, Inc.]]: 9 patents
 * Recent patents:
 ** [[20240240994. Thermal Sensor insitu monitoring of Magnetic Recording head (Western Digital Technologies, Inc.)]] (20240718)
@@ Line 208: / Line 210: @@
 ** [[20240032437. Buffer Layers, Interlayers, and Barrier Layers Comprising Heusler Alloys for SOT Based Sensor, Memory, and Storage Devices (Western Digital Technologies, Inc.)]] (20240125)
 === [[:Category:Cherngye HWANG|Cherngye HWANG of San Jose CA (US)]] ===
-* Number of Spintronics patents: 8
+* Number of Spintronics patents: 9
 * Top companies:
-** [[:Category:Western Digital Technologies, Inc.|Western Digital Technologies, Inc.]]: 8 patents
+** [[:Category:Western Digital Technologies, Inc.|Western Digital Technologies, Inc.]]: 9 patents
 * Recent patents:
 ** [[20240240994. Thermal Sensor insitu monitoring of Magnetic Recording head (Western Digital Technologies, Inc.)]] (20240718)
 ** [[20240112840. Cobalt-Boron (CoB) Layer for Magnetic Recording Devices, Memory Devices, and Storage Devices (Western Digital Technologies, Inc.)]] (20240404)
 ** [[20240032437. Buffer Layers, Interlayers, and Barrier Layers Comprising Heusler Alloys for SOT Based Sensor, Memory, and Storage Devices (Western Digital Technologies, Inc.)]] (20240125)
-=== [[:Category:Kuok San HO|Kuok San HO of Emerald Hills CA (US)]] ===
+=== [[:Category:Xiaoyong LIU|Xiaoyong LIU of San Jose CA (US)]] ===
 * Number of Spintronics patents: 8
 * Top companies:
 ** [[:Category:Western Digital Technologies, Inc.|Western Digital Technologies, Inc.]]: 8 patents
 * Recent patents:
+** [[20240144965. SOT READER WITH RECESSED SOT TOPOLOGICAL INSULATOR MATERIAL (Western Digital Technologies, Inc.)]] (20240502)
 ** [[20240240994. Thermal Sensor insitu monitoring of Magnetic Recording head (Western Digital Technologies, Inc.)]] (20240718)
-** [[20240112840. Cobalt-Boron (CoB) Layer for Magnetic Recording Devices, Memory Devices, and Storage Devices (Western Digital Technologies, Inc.)]] (20240404)
 ** [[20240032437. Buffer Layers, Interlayers, and Barrier Layers Comprising Heusler Alloys for SOT Based Sensor, Memory, and Storage Devices (Western Digital Technologies, Inc.)]] (20240125)
-=== [[:Category:Xiaoyong LIU|Xiaoyong LIU of San Jose CA (US)]] ===
+=== [[:Category:Kuok San HO|Kuok San HO of Emerald Hills CA (US)]] ===
-* Number of Spintronics patents: 7
+* Number of Spintronics patents: 8
 * Top companies:
-** [[:Category:Western Digital Technologies, Inc.|Western Digital Technologies, Inc.]]: 7 patents
+** [[:Category:Western Digital Technologies, Inc.|Western Digital Technologies, Inc.]]: 8 patents
 * Recent patents:
-** [[20240144965. SOT READER WITH RECESSED SOT TOPOLOGICAL INSULATOR MATERIAL (Western Digital Technologies, Inc.)]] (20240502)
 ** [[20240240994. Thermal Sensor insitu monitoring of Magnetic Recording head (Western Digital Technologies, Inc.)]] (20240718)
+** [[20240112840. Cobalt-Boron (CoB) Layer for Magnetic Recording Devices, Memory Devices, and Storage Devices (Western Digital Technologies, Inc.)]] (20240404)
 ** [[20240032437. Buffer Layers, Interlayers, and Barrier Layers Comprising Heusler Alloys for SOT Based Sensor, Memory, and Storage Devices (Western Digital Technologies, Inc.)]] (20240125)
 === [[:Category:Samridh Jaiswal|Samridh Jaiswal]] ===
@@ Line 239: / Line 241: @@
 ** [[20240074322. FABRICATING AN ELECTROCONDUCTIVE CONTACT ON A TOP LAYER OF A TUNNELING MAGNETORESISTANCE ELEMENT USING TWO HARD MASKS (Allegro MicroSystems, LLC)]] (20240229)
 ** [[20240085463. MULTI-TERMINAL DEVICES USING MAGNETORESISTANCE ELEMENTS (Allegro MicroSystems, LLC)]] (20240314)
+=== [[:Category:Hisashi TAKANO|Hisashi TAKANO]] ===
+* Number of Spintronics patents: 6
+* Top companies:
+** [[:Category:Western Digital Technologies, Inc.|Western Digital Technologies, Inc.]]: 6 patents
+* Recent patents:
+** [[20240144965. SOT READER WITH RECESSED SOT TOPOLOGICAL INSULATOR MATERIAL (Western Digital Technologies, Inc.)]] (20240502)
+** [[20240240994. Thermal Sensor insitu monitoring of Magnetic Recording head (Western Digital Technologies, Inc.)]] (20240718)
+** [[20240032437. Buffer Layers, Interlayers, and Barrier Layers Comprising Heusler Alloys for SOT Based Sensor, Memory, and Storage Devices (Western Digital Technologies, Inc.)]] (20240125)
 === [[:Category:Paolo Campiglio|Paolo Campiglio]] ===
 * Number of Spintronics patents: 5
@@ Line 263: / Line 273: @@
 ** [[20240074326. MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY (TDK CORPORATION)]] (20240229)
 ** [[20240365684. SPIN CURRENT MAGNETIZATION ROTATIONAL ELEMENT, SPIN CURRENT MAGNETIZATION ROTATIONAL TYPE MAGNETORESISTIVE ELEMENT, MAGNETIC MEMORY, AND MAGNETIZATION ROTATION METHOD (TDK CORPORATION)]] (20241031)
-=== [[:Category:Randy G. SIMMONS|Randy G. SIMMONS of San Jose CA (US)]] ===
+=== [[:Category:Son T. LE|Son T. LE of San Jose CA (US)]] ===
 * Number of Spintronics patents: 5
 * Top companies:
 ** [[:Category:Western Digital Technologies, Inc.|Western Digital Technologies, Inc.]]: 5 patents
 * Recent patents:
+** [[20240144960. TDMR SOT Read Heads Having Recessed Topological Insulator Materials (Western Digital Technologies, Inc.)]] (20240502)
 ** [[20240144965. SOT READER WITH RECESSED SOT TOPOLOGICAL INSULATOR MATERIAL (Western Digital Technologies, Inc.)]] (20240502)
-** [[20240112840. Cobalt-Boron (CoB) Layer for Magnetic Recording Devices, Memory Devices, and Storage Devices (Western Digital Technologies, Inc.)]] (20240404)
+** [[20240240994. Thermal Sensor insitu monitoring of Magnetic Recording head (Western Digital Technologies, Inc.)]] (20240718)
-** [[20240032437. Buffer Layers, Interlayers, and Barrier Layers Comprising Heusler Alloys for SOT Based Sensor, Memory, and Storage Devices (Western Digital Technologies, Inc.)]] (20240125)
+=== [[:Category:Randy G. SIMMONS|Randy G. SIMMONS of San Jose CA (US)]] ===
-=== [[:Category:Hisashi TAKANO|Hisashi TAKANO]] ===
 * Number of Spintronics patents: 5
 * Top companies:
@@ Line 277: / Line 287: @@
 * Recent patents:
 ** [[20240144965. SOT READER WITH RECESSED SOT TOPOLOGICAL INSULATOR MATERIAL (Western Digital Technologies, Inc.)]] (20240502)
-** [[20240240994. Thermal Sensor insitu monitoring of Magnetic Recording head (Western Digital Technologies, Inc.)]] (20240718)
+** [[20240112840. Cobalt-Boron (CoB) Layer for Magnetic Recording Devices, Memory Devices, and Storage Devices (Western Digital Technologies, Inc.)]] (20240404)
 ** [[20240032437. Buffer Layers, Interlayers, and Barrier Layers Comprising Heusler Alloys for SOT Based Sensor, Memory, and Storage Devices (Western Digital Technologies, Inc.)]] (20240125)
 === [[:Category:Naoki AKIYAMA|Naoki AKIYAMA]] ===
@@ Line 319: / Line 329: @@
 ** [[20240324242. MEMORY DEVICE (Kioxia Corporation)]] (20240926)
 ** [[20240324470. MAGNETIC MEMORY DEVICE (Kioxia Corporation)]] (20240926)
-=== [[:Category:Rohan Babu NAGABHIRAVA|Rohan Babu NAGABHIRAVA of Virginia Beach VA (US)]] ===
+=== [[:Category:Michael A. GRIBELYUK|Michael A. GRIBELYUK of San Jose CA (US)]] ===
 * Number of Spintronics patents: 4
 * Top companies:
 ** [[:Category:Western Digital Technologies, Inc.|Western Digital Technologies, Inc.]]: 4 patents
 * Recent patents:
-** [[20240144960. TDMR SOT Read Heads Having Recessed Topological Insulator Materials (Western Digital Technologies, Inc.)]] (20240502)
+** [[20240005973. Doped BiSb (012) or Undoped BiSb (001) Topological Insulator with GeNiFe Buffer Layer and/or Interlayer for SOT Based Sensor, Memory, and Storage Devices (Western Digital Technologies, Inc.)]] (20240104)
-** [[20240144965. SOT READER WITH RECESSED SOT TOPOLOGICAL INSULATOR MATERIAL (Western Digital Technologies, Inc.)]] (20240502)
+** [[20240006109. Highly Textured 001 BiSb And Materials for Making Same (Western Digital Technologies, Inc.)]] (20240104)
-** [[20240240994. Thermal Sensor insitu monitoring of Magnetic Recording head (Western Digital Technologies, Inc.)]] (20240718)
+** [[20240032437. Buffer Layers, Interlayers, and Barrier Layers Comprising Heusler Alloys for SOT Based Sensor, Memory, and Storage Devices (Western Digital Technologies, Inc.)]] (20240125)
-=== [[:Category:Son T. LE|Son T. LE of San Jose CA (US)]] ===
+=== [[:Category:Rohan Babu NAGABHIRAVA|Rohan Babu NAGABHIRAVA of Virginia Beach VA (US)]] ===
 * Number of Spintronics patents: 4
 * Top companies:
@@ Line 367: / Line 377: @@
 ** [[20240074322. FABRICATING AN ELECTROCONDUCTIVE CONTACT ON A TOP LAYER OF A TUNNELING MAGNETORESISTANCE ELEMENT USING TWO HARD MASKS (Allegro MicroSystems, LLC)]] (20240229)
 ** [[20240085463. MULTI-TERMINAL DEVICES USING MAGNETORESISTANCE ELEMENTS (Allegro MicroSystems, LLC)]] (20240314)
-=== [[:Category:Michael A. GRIBELYUK|Michael A. GRIBELYUK of San Jose CA (US)]] ===
-* Number of Spintronics patents: 3
-* Top companies:
-** [[:Category:Western Digital Technologies, Inc.|Western Digital Technologies, Inc.]]: 3 patents
-* Recent patents:
-** [[20240005973. Doped BiSb (012) or Undoped BiSb (001) Topological Insulator with GeNiFe Buffer Layer and/or Interlayer for SOT Based Sensor, Memory, and Storage Devices (Western Digital Technologies, Inc.)]] (20240104)
-** [[20240006109. Highly Textured 001 BiSb And Materials for Making Same (Western Digital Technologies, Inc.)]] (20240104)
-** [[20240032437. Buffer Layers, Interlayers, and Barrier Layers Comprising Heusler Alloys for SOT Based Sensor, Memory, and Storage Devices (Western Digital Technologies, Inc.)]] (20240125)
 === [[:Category:Xiaoyu XU|Xiaoyu XU of San Jose CA (US)]] ===
 * Number of Spintronics patents: 3
@@ Line 514: / Line 516: @@
 ** [[20240011799. MAGNETIC SENSOR (Panasonic Intellectual Property Management Co., Ltd.)]] (20240111)
 ** [[20240003711. MAGNETIC SENSOR (Panasonic Intellectual Property Management Co., Ltd.)]] (20240104)
+=== [[:Category:Eby G. Friedman|Eby G. Friedman of Rochester NY (US)]] ===
+* Number of Spintronics patents: 2
+* Top companies:
+** [[:Category:University of Rochester|University of Rochester]]: 2 patents
+* Recent patents:
+** [[20240412909. SWITCHING OF PERPENDICULARLY MAGNETIZED NANOMAGNETS WITH SPIN-ORBIT TORQUES IN THE ABSENCE OF EXTERNAL MAGNETIC FIELDS (University of Rochester)]] (20241212)
+** [[20240047115. SWITCHING OF PERPENDICULARLY MAGNETIZED NANOMAGNETS WITH SPIN-ORBIT TORQUES IN THE ABSENCE OF EXTERNAL MAGNETIC FIELDS (University of Rochester)]] (20240208)
+=== [[:Category:Engin Ipek|Engin Ipek of Rochester NY (US)]] ===
+* Number of Spintronics patents: 2
+* Top companies:
+** [[:Category:University of Rochester|University of Rochester]]: 2 patents
+* Recent patents:
+** [[20240412909. SWITCHING OF PERPENDICULARLY MAGNETIZED NANOMAGNETS WITH SPIN-ORBIT TORQUES IN THE ABSENCE OF EXTERNAL MAGNETIC FIELDS (University of Rochester)]] (20241212)
+** [[20240047115. SWITCHING OF PERPENDICULARLY MAGNETIZED NANOMAGNETS WITH SPIN-ORBIT TORQUES IN THE ABSENCE OF EXTERNAL MAGNETIC FIELDS (University of Rochester)]] (20240208)
+=== [[:Category:Mohammad Kazemi|Mohammad Kazemi of Rochester NY (US)]] ===
+* Number of Spintronics patents: 2
+* Top companies:
+** [[:Category:University of Rochester|University of Rochester]]: 2 patents
+* Recent patents:
+** [[20240412909. SWITCHING OF PERPENDICULARLY MAGNETIZED NANOMAGNETS WITH SPIN-ORBIT TORQUES IN THE ABSENCE OF EXTERNAL MAGNETIC FIELDS (University of Rochester)]] (20241212)
+** [[20240047115. SWITCHING OF PERPENDICULARLY MAGNETIZED NANOMAGNETS WITH SPIN-ORBIT TORQUES IN THE ABSENCE OF EXTERNAL MAGNETIC FIELDS (University of Rochester)]] (20240208)
 === [[:Category:Takahiro IBUSUKI|Takahiro IBUSUKI]] ===
 * Number of Spintronics patents: 2
@@ Line 550: / Line 573: @@
 ** [[20240315143. MAGNETIC MEMORY DEVICE (Kioxia Corporation)]] (20240919)
 ** [[20240099019. MAGNETORESISTANCE MEMORY DEVICE AND METHOD FOR MANUFACTURING MAGNETORESISTANCE MEMORY DEVICE (Kioxia Corporation)]] (20240321)
-=== [[:Category:Jisong JIN|Jisong JIN]] ===
-* Number of Spintronics patents: 2
-* Top companies:
-** [[:Category:Semiconductor Manufacturing International (Shanghai) Corporation|Semiconductor Manufacturing International (Shanghai) Corporation]]: 2 patents
-* Recent patents:
-** [[20240274175. MAGNETIC RANDOM ACCESS MEMORY CELL AND MEMORY (Semiconductor Manufacturing International (Shanghai) Corporation)]] (20240815)
-** [[20240276889. MAGNETIC RANDOM ACCESS MEMORY CELL AND MAGNETIC RANDOM ACCESS MEMORY (Semiconductor Manufacturing International (Shanghai) Corporation)]] (20240815)
-=== [[:Category:Yugo ISHITANI|Yugo ISHITANI]] ===
-* Number of Spintronics patents: 2
-* Top companies:
-** [[:Category:TDK Corporation|TDK Corporation]]: 1 patents
-** [[:Category:TDK CORPORATION|TDK CORPORATION]]: 1 patents
-* Recent patents:
-** [[20240407176. MAGNETIZATION ROTATION ELEMENT, MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY (TDK Corporation)]] (20241205)
-** [[20240074326. MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY (TDK CORPORATION)]] (20240229)
-=== [[:Category:Toshihiko NAGASE|Toshihiko NAGASE]] ===
-* Number of Spintronics patents: 2
-* Top companies:
-** [[:Category:Kioxia Corporation|Kioxia Corporation]]: 2 patents
-* Recent patents:
-** [[20240099156. MAGNETIC MEMORY DEVICE (Kioxia Corporation)]] (20240321)
-** [[20240324242. MEMORY DEVICE (Kioxia Corporation)]] (20240926)
 == Top Collaborations in Spintronics ==
@@ Line 583: / Line 584: @@
 [[File:Top_20_Cities_for_Spintronics_Inventors.png|border|800px]]
-* San Jose: 68 inventors
+* San Jose: 74 inventors
 * Tokyo: 34 inventors
 * Beijing: 31 inventors
@@ Line 594: / Line 595: @@
 * Osaka: 6 inventors
 * Tainan City: 6 inventors
+* Rochester: 6 inventors
 * Seongnam-si Gyeonggi-do: 6 inventors
 * Arcueil: 5 inventors
 * Hsinchu City: 5 inventors
+* Fujisawa-shi: 5 inventors
 * Portland: 5 inventors
 * Massy: 4 inventors
 * Fukui: 4 inventors
 * Virginia Beach: 4 inventors
-* Fujisawa-shi: 4 inventors
-* Zhejiang: 4 inventors
 [[Category:Spintronics]]
 [[Category:Patent Application Trends by Technology in 2024]]

Difference between revisions of "Spintronics Patent Application Trends 2024"

Latest revision as of 06:07, 19 December 2024

Contents

Spintronics Patent Application Filing Activity

Spintronics patent applications in 2024

Top Technology Areas in Spintronics

Top CPC Codes

Top Companies in Spintronics

New Companies in Spintronics (Last Month)

Emerging Technology Areas in Spintronics

Top Companies in Emerging Spintronics Technologies

Top Inventors in Spintronics

Top Collaborations in Spintronics

Top US States for Spintronics Inventors

Top Cities for Spintronics Inventors

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