Difference between revisions of "YANGTZE MEMORY TECHNOLOGIES CO., LTD. patent applications published on July 25th, 2024"

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'''Summary of the patent applications from YANGTZE MEMORY TECHNOLOGIES CO., LTD. on July 25th, 2024'''
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1. 'Summary': Yangtze Memory Technologies Co., Ltd. has recently filed patents for innovative semiconductor devices and methods that enhance memory storage and data processing capabilities. These patents involve the development of 3D memory devices with specific structural features, advanced semiconductor devices for high-performance computing, and voltage control methods for non-volatile memories.
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2. 'Key Points of Patents':
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  * 3D Memory Device:
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    - Includes first core region, second core region, and isolation region.
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    - Stack in core regions consists of alternating dielectric and conductor layers.
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    - Gate line slit structures and top select gate (TSG) cut structures extend through the stack.
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    - First isolation structure in the isolation region contacts with gate line slit structures.
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    - TSG cut structures positioned between gate line slit structures in a specific direction.
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  * Advanced Semiconductor Devices:
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    - Two semiconductor structures containing a processor, logic circuit, and array of SRAM cells.
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    - Formation of device layer, interconnect layers, and bonding layers in each structure.
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    - Connectivity between processor, logic circuit, and SRAM cells through interconnect and bonding layers.
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  * Voltage Control Method for Non-Volatile Memories:
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    - Application of first voltage to unselected word line in a non-volatile memory.
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    - First voltage rises at a first slope until reaching a predetermined voltage.
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    - Voltage generator stops outputting first voltage at predetermined voltage and outputs pass voltage to unselected word line.
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3. 'Notable Applications':
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  * High-density memory storage devices
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  * Advanced computing devices
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  * Improved data storage systems
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  * Enhanced performance in electronic devices.
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 +
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==Patent applications for YANGTZE MEMORY TECHNOLOGIES CO., LTD. on July 25th, 2024==
 
==Patent applications for YANGTZE MEMORY TECHNOLOGIES CO., LTD. on July 25th, 2024==
  

Latest revision as of 07:49, 26 July 2024

Summary of the patent applications from YANGTZE MEMORY TECHNOLOGIES CO., LTD. on July 25th, 2024

1. 'Summary': Yangtze Memory Technologies Co., Ltd. has recently filed patents for innovative semiconductor devices and methods that enhance memory storage and data processing capabilities. These patents involve the development of 3D memory devices with specific structural features, advanced semiconductor devices for high-performance computing, and voltage control methods for non-volatile memories.

2. 'Key Points of Patents': 

  * 3D Memory Device:
    - Includes first core region, second core region, and isolation region.
    - Stack in core regions consists of alternating dielectric and conductor layers.
    - Gate line slit structures and top select gate (TSG) cut structures extend through the stack.
    - First isolation structure in the isolation region contacts with gate line slit structures.
    - TSG cut structures positioned between gate line slit structures in a specific direction.

  * Advanced Semiconductor Devices:
    - Two semiconductor structures containing a processor, logic circuit, and array of SRAM cells.
    - Formation of device layer, interconnect layers, and bonding layers in each structure.
    - Connectivity between processor, logic circuit, and SRAM cells through interconnect and bonding layers.

  * Voltage Control Method for Non-Volatile Memories:
    - Application of first voltage to unselected word line in a non-volatile memory.
    - First voltage rises at a first slope until reaching a predetermined voltage.
    - Voltage generator stops outputting first voltage at predetermined voltage and outputs pass voltage to unselected word line.

3. 'Notable Applications': 

  * High-density memory storage devices
  * Advanced computing devices
  * Improved data storage systems
  * Enhanced performance in electronic devices.



Patent applications for YANGTZE MEMORY TECHNOLOGIES CO., LTD. on July 25th, 2024

DATA PREPROCESSING (DPP) PATTERN SUPPORTING BOTH NORMAL PROGRAM AND EARLY CACHE RELEASE PROGRAM (ECRP) (18597072)

Main Inventor

Jianjie LI


NON-VOLATILE MEMORY AND OPERATING METHOD THEREOF (18625956)

Main Inventor

Li XIANG


VERTICAL MEMORY DEVICES (18593467)

Main Inventor

Kun ZHANG


BONDED SEMICONDUCTOR DEVICES HAVING PROCESSOR AND STATIC RANDOM-ACCESS MEMORY AND METHODS FOR FORMING THE SAME (18587031)

Main Inventor

Jun LIU


THREE-DIMENSIONAL MEMORY DEVICE AND FABRICATION METHOD THEREOF (18624578)

Main Inventor

Zhong ZHANG

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