Difference between revisions of "Category:Ching-Shih MA"

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(Updating Category:Ching-Shih_MA)
 
(Updating Category:Ching-Shih_MA)
 
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=== Executive Summary ===
 
=== Executive Summary ===
Ching-Shih MA is an inventor who has filed 2 patents. Their primary areas of innovation include No explanation available (1 patents), No explanation available (1 patents), No explanation available (1 patents), and they have worked with companies such as Taiwan-Asia Semiconductor Corporation (2 patents). Their most frequent collaborators include [[Category:Kuo-Chen WU|Kuo-Chen WU]] (2 collaborations), [[Category:Kun-Te LIN|Kun-Te LIN]] (1 collaborations).
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Ching-Shih MA is an inventor who has filed 2 patents. Their primary areas of innovation include {the electrode extending partially in or entirely through the semiconductor body} (1 patents), Roughened surfaces, e.g. at the interface between epitaxial layers (1 patents), Transparent materials (1 patents), and they have worked with companies such as Taiwan-Asia Semiconductor Corporation (2 patents). Their most frequent collaborators include [[Category:Kuo-Chen WU|Kuo-Chen WU]] (2 collaborations), [[Category:Kun-Te LIN|Kun-Te LIN]] (1 collaborations).
  
 
=== Patent Filing Activity ===
 
=== Patent Filing Activity ===
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==== List of Technology Areas ====
 
==== List of Technology Areas ====
* [[:Category:CPC_H01L33/382|H01L33/382]] (No explanation available): 1 patents
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* [[:Category:CPC_H01L33/382|H01L33/382]] ({the electrode extending partially in or entirely through the semiconductor body}): 1 patents
* [[:Category:CPC_H01L33/22|H01L33/22]] (No explanation available): 1 patents
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* [[:Category:CPC_H01L33/22|H01L33/22]] (Roughened surfaces, e.g. at the interface between epitaxial layers): 1 patents
* [[:Category:CPC_H01L33/42|H01L33/42]] (No explanation available): 1 patents
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* [[:Category:CPC_H01L33/42|H01L33/42]] (Transparent materials): 1 patents
* [[:Category:CPC_H01L33/145|H01L33/145]] (No explanation available): 1 patents
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* [[:Category:CPC_H01L33/145|H01L33/145]] ({with a current-blocking structure}): 1 patents
* [[:Category:CPC_H01L33/38|H01L33/38]] (No explanation available): 1 patents
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* [[:Category:CPC_H01L33/38|H01L33/38]] (with a particular shape): 1 patents
  
 
=== Companies ===
 
=== Companies ===

Latest revision as of 09:39, 18 July 2024

Ching-Shih MA

Executive Summary

Ching-Shih MA is an inventor who has filed 2 patents. Their primary areas of innovation include {the electrode extending partially in or entirely through the semiconductor body} (1 patents), Roughened surfaces, e.g. at the interface between epitaxial layers (1 patents), Transparent materials (1 patents), and they have worked with companies such as Taiwan-Asia Semiconductor Corporation (2 patents). Their most frequent collaborators include (2 collaborations), (1 collaborations).

Patent Filing Activity

Ching-Shih MA Monthly Patent Applications.png

Technology Areas

Ching-Shih MA Top Technology Areas.png

List of Technology Areas

  • H01L33/382 ({the electrode extending partially in or entirely through the semiconductor body}): 1 patents
  • H01L33/22 (Roughened surfaces, e.g. at the interface between epitaxial layers): 1 patents
  • H01L33/42 (Transparent materials): 1 patents
  • H01L33/145 ({with a current-blocking structure}): 1 patents
  • H01L33/38 (with a particular shape): 1 patents

Companies

Ching-Shih MA Top Companies.png

List of Companies

  • Taiwan-Asia Semiconductor Corporation: 2 patents

Collaborators

Subcategories

This category has the following 3 subcategories, out of 3 total.

C

K