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Taiwan semiconductor manufacturing company, ltd. (20250130490). METHODS OF REPAIRING EXTREME ULTRAVIOLET PHOTOMASKS: Difference between revisions

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<!-- JSON-LD markup for search engines:
{"@context":"https://schema.org","@type":"TechArticle","headline":"METHODS OF REPAIRING EXTREME ULTRAVIOLET PHOTOMASKS","name":"METHODS OF REPAIRING EXTREME ULTRAVIOLET PHOTOMASKS","description":"a method for repairing a lithography mask is provided. the method includes receiving a lithography mask having a capping layer that includes a damaged region, identifying a location and a dimension of...","datePublished":"April 24th, 2025","mainEntity":{"@type":"Patent","identifier":"20250130490","name":"METHODS OF REPAIRING EXTREME ULTRAVIOLET PHOTOMASKS","abstract":"a method for repairing a lithography mask is provided. the method includes receiving a lithography mask having a capping layer that includes a damaged region, identifying a location and a dimension of the damaged region of the capping layer, determining a repairing time duration based on the dimension of the damaged region of the capping layer, and forming a capping patch layer in the damaged region of the capping layer.","applicationNumber":"20250130490","datePublished":"April 24th, 2025","inventor":[{"@type":"Person","name":"Ying-Hui HSIEH"},{"@type":"Person","name":"Boming HSU"},{"@type":"Person","name":"Hsiang-Chien HSU"},{"@type":"Person","name":"Chien-Hung LAI"}],"applicant":{"@type":"Organization","name":"taiwan semiconductor manufacturing company, ltd."},"additionalProperty":[{"@type":"PropertyValue","name":"IPC Classification","value":"G03F1/72"},{"@type":"PropertyValue","name":"IPC Classification","value":"C07F15/00"},{"@type":"PropertyValue","name":"IPC Classification","value":"C23C16/48"},{"@type":"PropertyValue","name":"IPC Classification","value":"G03F1/24"},{"@type":"PropertyValue","name":"IPC Classification","value":"G03F1/54"},{"@type":"PropertyValue","name":"CPC Classification","value":"G03F1/72"}]}}
-->
=METHODS OF REPAIRING EXTREME ULTRAVIOLET PHOTOMASKS=
=METHODS OF REPAIRING EXTREME ULTRAVIOLET PHOTOMASKS=



Latest revision as of 15:38, 29 April 2025


METHODS OF REPAIRING EXTREME ULTRAVIOLET PHOTOMASKS

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Ying-Hui Hsieh of Hsinchu TW

Boming Hsu of Hsinchu TW

Hsiang-Chien Hsu of Hsinchu TW

Chien-Hung Lai of Hsinchu TW

METHODS OF REPAIRING EXTREME ULTRAVIOLET PHOTOMASKS

This abstract first appeared for US patent application 20250130490 titled 'METHODS OF REPAIRING EXTREME ULTRAVIOLET PHOTOMASKS

Original Abstract Submitted

a method for repairing a lithography mask is provided. the method includes receiving a lithography mask having a capping layer that includes a damaged region, identifying a location and a dimension of the damaged region of the capping layer, determining a repairing time duration based on the dimension of the damaged region of the capping layer, and forming a capping patch layer in the damaged region of the capping layer.

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