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Category:Janbo Zhang: Difference between revisions - WikiPatents Jump to content

Category:Janbo Zhang: Difference between revisions

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=== Executive Summary ===
=== Executive Summary ===
Janbo Zhang is an inventor who has filed 7 patents. Their primary areas of innovation include ELECTRONIC MEMORY DEVICES (3 patents), ELECTRONIC MEMORY DEVICES (2 patents), including a plurality of individual components in a repetitive configuration (2 patents), and they have worked with companies such as Fujian Jinhua Integrated Circuit Co., Ltd. (7 patents). Their most frequent collaborators include [[Category:Yu-Cheng Tung|Yu-Cheng Tung]] (7 collaborations).
Janbo Zhang is an inventor who has filed 3 patents. Their primary areas of innovation include No explanation available (1 patents), {using trench refilling with dielectric materials  (trench filling with polycristalline silicon (1 patents), Dynamic random access memory [DRAM] devices (1 patents), and they have worked with companies such as Fujian Jinhua Integrated Circuit Co., Ltd. (3 patents). Their most frequent collaborators include [[Category:Yu-Cheng Tung|Yu-Cheng Tung]] (2 collaborations).


=== Patent Filing Activity ===
=== Patent Filing Activity ===
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==== List of Technology Areas ====
==== List of Technology Areas ====
* [[:Category:CPC_H10B12/315|H10B12/315]] (ELECTRONIC MEMORY DEVICES): 3 patents
* [[:Category:CPC_H10D64/519|H10D64/519]] (No explanation available): 1 patents
* [[:Category:CPC_H10B12/0335|H10B12/0335]] (ELECTRONIC MEMORY DEVICES): 2 patents
* [[:Category:CPC_H01L21/76224|H01L21/76224]] ({using trench refilling with dielectric materials  (trench filling with polycristalline silicon): 1 patents
* [[:Category:CPC_H01L27/10823|H01L27/10823]] (including a plurality of individual components in a repetitive configuration): 2 patents
* [[:Category:CPC_H10B12/00|H10B12/00]] (Dynamic random access memory [DRAM] devices): 1 patents
* [[:Category:CPC_G11C5/063|G11C5/063]] (STATIC STORES  (semiconductor memory devices): 2 patents
* [[:Category:CPC_H01L28/91|H01L28/91]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
* [[:Category:CPC_H01L28/75|H01L28/75]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
* [[:Category:CPC_H10B12/03|H10B12/03]] (ELECTRONIC MEMORY DEVICES): 1 patents
* [[:Category:CPC_H10B12/03|H10B12/03]] (ELECTRONIC MEMORY DEVICES): 1 patents
* [[:Category:CPC_H01L27/10876|H01L27/10876]] (including a plurality of individual components in a repetitive configuration): 1 patents
* [[:Category:CPC_H01L27/10885|H01L27/10885]] (including a plurality of individual components in a repetitive configuration): 1 patents
* [[:Category:CPC_H01L27/10888|H01L27/10888]] (including a plurality of individual components in a repetitive configuration): 1 patents
* [[:Category:CPC_H01L21/76831|H01L21/76831]] ({in via holes or trenches, e.g. non-conductive sidewall liners}): 1 patents
* [[:Category:CPC_H01L21/76843|H01L21/76843]] ({formed in openings in a dielectric}): 1 patents
* [[:Category:CPC_H01L23/5226|H01L23/5226]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
* [[:Category:CPC_H01L23/53223|H01L23/53223]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
* [[:Category:CPC_H01L23/53238|H01L23/53238]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
* [[:Category:CPC_H01L23/53266|H01L23/53266]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
* [[:Category:CPC_H01L27/10808|H01L27/10808]] (including a plurality of individual components in a repetitive configuration): 1 patents
* [[:Category:CPC_H01L27/10855|H01L27/10855]] (including a plurality of individual components in a repetitive configuration): 1 patents
* [[:Category:CPC_H01L27/10891|H01L27/10891]] (including a plurality of individual components in a repetitive configuration): 1 patents
* [[:Category:CPC_H10B12/033|H10B12/033]] (ELECTRONIC MEMORY DEVICES): 1 patents
* [[:Category:CPC_H10B12/31|H10B12/31]] (ELECTRONIC MEMORY DEVICES): 1 patents
* [[:Category:CPC_H01L21/76224|H01L21/76224]] ({using trench refilling with dielectric materials  (trench filling with polycristalline silicon): 1 patents
* [[:Category:CPC_H10B12/482|H10B12/482]] (ELECTRONIC MEMORY DEVICES): 1 patents
* [[:Category:CPC_H10B12/482|H10B12/482]] (ELECTRONIC MEMORY DEVICES): 1 patents
* [[:Category:CPC_H10B12/485|H10B12/485]] (ELECTRONIC MEMORY DEVICES): 1 patents
* [[:Category:CPC_H10B12/485|H10B12/485]] (ELECTRONIC MEMORY DEVICES): 1 patents
* [[:Category:CPC_H10B12/488|H10B12/488]] (ELECTRONIC MEMORY DEVICES): 1 patents
* [[:Category:CPC_H10B12/488|H10B12/488]] (ELECTRONIC MEMORY DEVICES): 1 patents
* [[:Category:CPC_H10B12/315|H10B12/315]] (ELECTRONIC MEMORY DEVICES): 1 patents
* [[:Category:CPC_H10B12/033|H10B12/033]] (ELECTRONIC MEMORY DEVICES): 1 patents


=== Companies ===
=== Companies ===
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==== List of Companies ====
==== List of Companies ====
* Fujian Jinhua Integrated Circuit Co., Ltd.: 7 patents
* Fujian Jinhua Integrated Circuit Co., Ltd.: 3 patents


=== Collaborators ===
=== Collaborators ===
* [[:Category:Yu-Cheng Tung|Yu-Cheng Tung]][[Category:Yu-Cheng Tung]] (7 collaborations)
* [[:Category:Yu-Cheng Tung|Yu-Cheng Tung]][[Category:Yu-Cheng Tung]] (2 collaborations)


[[Category:Janbo Zhang]]
[[Category:Janbo Zhang]]
[[Category:Inventors]]
[[Category:Inventors]]
[[Category:Inventors filing patents with Fujian Jinhua Integrated Circuit Co., Ltd.]]
[[Category:Inventors filing patents with Fujian Jinhua Integrated Circuit Co., Ltd.]]

Latest revision as of 03:54, 28 March 2025

Janbo Zhang

Executive Summary

Janbo Zhang is an inventor who has filed 3 patents. Their primary areas of innovation include No explanation available (1 patents), {using trench refilling with dielectric materials (trench filling with polycristalline silicon (1 patents), Dynamic random access memory [DRAM] devices (1 patents), and they have worked with companies such as Fujian Jinhua Integrated Circuit Co., Ltd. (3 patents). Their most frequent collaborators include (2 collaborations).

Patent Filing Activity

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Technology Areas

List of Technology Areas

  • H10D64/519 (No explanation available): 1 patents
  • H01L21/76224 ({using trench refilling with dielectric materials (trench filling with polycristalline silicon): 1 patents
  • H10B12/00 (Dynamic random access memory [DRAM] devices): 1 patents
  • H10B12/03 (ELECTRONIC MEMORY DEVICES): 1 patents
  • H10B12/482 (ELECTRONIC MEMORY DEVICES): 1 patents
  • H10B12/485 (ELECTRONIC MEMORY DEVICES): 1 patents
  • H10B12/488 (ELECTRONIC MEMORY DEVICES): 1 patents
  • H10B12/315 (ELECTRONIC MEMORY DEVICES): 1 patents
  • H10B12/033 (ELECTRONIC MEMORY DEVICES): 1 patents

Companies

List of Companies

  • Fujian Jinhua Integrated Circuit Co., Ltd.: 3 patents

Collaborators

Subcategories

This category has the following 2 subcategories, out of 2 total.

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