Apple Inc. (20250016923). Wideband Millimeter Wave Via Transition: Difference between revisions
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==Inventor(s)== | ==Inventor(s)== | ||
[[:Category:Chi V. Pham of San Jose CA | [[:Category:Chi V. Pham of San Jose CA US|Chi V. Pham of San Jose CA US]][[Category:Chi V. Pham of San Jose CA US]] | ||
[[:Category:Xiaofang Mu of Cupertino CA | [[:Category:Xiaofang Mu of Cupertino CA US|Xiaofang Mu of Cupertino CA US]][[Category:Xiaofang Mu of Cupertino CA US]] | ||
==Wideband Millimeter Wave Via Transition== | ==Wideband Millimeter Wave Via Transition== | ||
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This abstract first appeared for US patent application 20250016923 titled 'Wideband Millimeter Wave Via Transition | This abstract first appeared for US patent application 20250016923 titled 'Wideband Millimeter Wave Via Transition | ||
==Original Abstract Submitted== | ==Original Abstract Submitted== | ||
Latest revision as of 08:45, 25 March 2025
Wideband Millimeter Wave Via Transition
Organization Name
Inventor(s)
Xiaofang Mu of Cupertino CA US
Wideband Millimeter Wave Via Transition
This abstract first appeared for US patent application 20250016923 titled 'Wideband Millimeter Wave Via Transition
Original Abstract Submitted
devices are disclosed that include a wideband millimeter wave (mmw) via transition design for multilayer printed circuit boards (mlbs). in various instances embodiments, a via is dimensioned to provide impedance matching to stripline tracing connected at the end of the via. impedance matching in the via may eliminate the need for an impedance matching section on the stripline tracing. in some instances, the dimensions of the via pad diameter and the via keepout diameter are selected to tune a via transition structure to selected frequencies and/or frequency bandwidths.
